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Responsivity

About: Responsivity is a research topic. Over the lifetime, 9918 publications have been published within this topic receiving 186118 citations.


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Journal ArticleDOI
TL;DR: In this article, the authors reported an investigation on GeSn p-i-n waveguide photodetectors grown on a Ge-buffered Si wafer and showed that increasing the Sn content in the active layers can significantly shorten the required device length to achieve the maximum efficiency.
Abstract: We report an investigation on GeSn p-i-n waveguide photodetectors grown on a Ge-buffered Si wafer. In comparison with a reference Ge detector, the GeSn detector shows an enhanced responsivity in the measured energy range, mainly attributed to the smaller bandgap caused by Sn-alloying. Analysis of the quantum efficiency indicates that increasing the Sn content in the active layers can significantly shorten the required device length to achieve the maximum efficiency. The present investigation demonstrates the planar photodetectors desired for monolithic integration with electronic devices.

82 citations

Journal ArticleDOI
TL;DR: In this paper, the dielectric constant, pyroelectric coefficient, specific heat, density and loss tangent were obtained for many Pyroelectric materials from −25 to 100°C.

82 citations

Journal ArticleDOI
TL;DR: In this paper, a high performance vertical solar-blind ultraviolet photodetector based on β-Ga2O3 thin films sandwiched between two graphene sheets has been fabricated by laser molecular beam epitaxy.

82 citations

Journal ArticleDOI
TL;DR: This study's fabrication of a flexible self-powered ZnO/Spiro-MeOTAD hybrid heterojunction ultraviolet photodetector (UV PD) has a fast and stable response to the UV light illumination at zero bias.
Abstract: Strain-induced piezoelectric potential (piezopotential) within wurtzite-structured ZnO can engineer the energy-band structure at a contact or a junction and, thus, enhance the performance of corresponding optoelectronic devices by effectively tuning the charge carriers’ separation and transport. Here, we report the fabrication of a flexible self-powered ZnO/Spiro-MeOTAD hybrid heterojunction ultraviolet photodetector (UV PD). The obtained device has a fast and stable response to the UV light illumination at zero bias. Together with responsivity and detectivity, the photocurrent can be increased about 1-fold upon applying a 0.753% tensile strain. The enhanced performance can be attributed to more efficient separation and transport of photogenerated electron–hole pairs, which is favored by the positive piezopotential modulated energy-band structure at the ZnO-Spiro-MeOTAD interface. This study demonstrates a promising approach to optimize the performance of a photodetector made of piezoelectric semiconducto...

82 citations

Journal ArticleDOI
TL;DR: The evolution process demonstrates that a synergetic effect of pressure, aging time and organic ligands results in polycrystal-to-monocrystal formation and defect annihilation in Freestanding large-size SnS thin crystals synthesized via two-dimensional oriented attachment (OA) growth of colloidal quantum dots (CQDs).
Abstract: Freestanding large-size SnS thin crystals are synthesized via two-dimensional oriented attachment (OA) growth of colloidal quantum dots (CQDs) in a novel high-pressure solvothermal reaction. The SnS thin crystals present a uniform rectangular shape with a lateral size of 20–30 um and thickness of <10 nm. The evolution process demonstrates that a synergetic effect of pressure, aging time and organic ligands results in polycrystal-to-monocrystal formation and defect annihilation. Furthermore, gas sensor and photodetector devices, based on SnS thin single crystals, are also prepared. The sensing devices present high sensitivity, superior selectivity, low detection limit (≪100 ppb) and reversibility to NO2 at room temperature. The fabricated photodetector devices exhibit a high responsivity of 2.04 × 103 A W1– and high external quantum efficiency of ∼4.75 × 105 % at 532 nm, which are much higher than most of the photodetector devices.

82 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023848
20221,568
2021795
2020718
2019740
2018653