Topic
Responsivity
About: Responsivity is a research topic. Over the lifetime, 9918 publications have been published within this topic receiving 186118 citations.
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TL;DR: In this article, a multilayer Ti∕Au contacts were fabricated on individual, unintentionally doped zinc selenide nanowires with 80nm nominal diameter and four-terminal contact structures were used to independently measure current-voltage characteristics of contacts and nanowsires.
Abstract: Multilayer Ti∕Au contacts were fabricated on individual, unintentionally doped zinc selenide nanowires with 80nm nominal diameter. Four-terminal contact structures were used to independently measure current-voltage characteristics of contacts and nanowires. Specific contact resistivity of Ti∕Au contacts is 0.024Ωcm2 and intrinsic resistivity of the nanowires is approximately 1Ωcm. The authors have also measured the spectral photocurrent responsivity of a ZnSe nanowire with 2.0V bias across Ti∕Au electrodes, which exhibits a turnon for wavelengths shorter than 470nm and reaches 22A∕W for optical excitation at 400nm.
78 citations
TL;DR: Polarization dependence analysis of back-gated graphene field effect transistor terahertz responsivity at frequencies ranging from 1.63 to 3.11 THz reveals two independent mechanisms of THz detection by graphene transistor as discussed by the authors.
Abstract: Polarization dependence analysis of back-gated graphene field-effect transistor terahertz responsivity at frequencies ranging from 1.63 to 3.11 THz reveals two independent mechanisms of THz detection by graphene transistor: plasmonic, associated with the transistor nonlinearity, and bolometric, caused by graphene sheet temperature increase due to THz radiation absorption. In the bolometric regime, electron and hole branches demonstrate a very different response to THz radiation, which we link to the asymmetry of the current-voltage characteristics temperature dependence with respect to the Dirac point. Obtained results are important for development of high-efficiency graphene THz detectors.
78 citations
TL;DR: In this article, two distinct peaks (λp1∼4.2 μm and λp2∼7.6 μm) are observed in the spectral response, which could possibly be due to a bound-to-continuum transition and a boundto-bound transition, respectively.
Abstract: Normal incidence long wave infrared (λc∼9 μm) InAs/In0.15Ga0.85As dots-in-a-well detectors with background limited performance at 91 K, under f#1.7 300 K background irradiance, are reported. Two distinct peaks (λp1∼4.2 μm and λp2∼7.6 μm) are observed in the spectral response, which could possibly be due to a bound-to-continuum transition and a bound-to-bound transition, respectively. The operating wavelength of the detector can be varied by changing the width of the quantum well surrounding the quantum dots. Using calibrated blackbody measurements, the peak responsivity of the detector is measured to be 0.73 A/W (Vb=−1.7 V at T=60 K).
78 citations
TL;DR: In this article, the authors demonstrate that photodetectors fabricated with pulsed-laser deposition (PLD) grown centimeter-scale high quality In2Se3 films on various substrates are capable of superior photoresponse.
Abstract: High-sensitivity photodetectors are of great importance to extensive applications. However, thus far, photodetectors integrating transparency, flexibility, broadband response and competitive responsivity are quite rare. Herein, we demonstrate that photodetectors fabricated with pulsed-laser deposition (PLD) grown centimeter-scale high quality In2Se3 films on various substrates are capable of superior photoresponse. In particular, the fabricated device on a transparent polyimide (PI) substrate possesses flexible and transparent properties. In addition, it exhibits broadband photoresponse ranging from 254 to 1064 nm and a high detectivity reaching 6.02 × 1011 cm Hz1/2 W−1 at 532 nm. The responsivity and the external quantum efficiency are 20.5 A W−1 and 4784%, respectively, plus it shows a fast response time of 24.6 ms for the rise and 57.4 ms for the decay. Importantly, the responsivity of the device exhibits a linear dependence on the bias voltage, providing smooth modulation for multifunctional photoelectrical applications. We establish that the direct bandgap nature of In2Se3 and good Ohmic contact between In2Se3 and indium tin oxide (ITO) electrodes are responsible for such excellent performance. This study unambiguously reveals that these PLD-grown In2Se3 films possess the potential to be applied for versatile optoelectronic systems.
78 citations
TL;DR: In this paper, the authors propose a framework to interpret heterodyne mixing in superconducting hot-electron bolometers, where the physical conversion process of the mixer is the result of an electronic hotspot, of which the length and consequently the resistance oscillates at the intermediate frequency.
Abstract: We propose a framework to interpret heterodyne mixing in superconducting hot-electron bolometers The physical conversion process of the mixer is the result of an electronic hotspot, of which the length, and consequently the resistance, oscillates at the intermediate frequency On the basis of this concept, we calculate the (un)pumped current–voltage relation, the dc voltage responsivity, and the mixer conversion efficiency
78 citations