Responsivity

About: Responsivity is a research topic. Over the lifetime, 9918 publications have been published within this topic receiving 186118 citations.

Visible to near-infrared photodetectors based on MoS 2 vertical Schottky junctions.

Abstract: Over the past few years, two-dimensional (2D) nanomaterials, such as MoS2, have been widely considered as the promising channel materials for next-generation high-performance phototransistors. However, their device performances still mostly suffer from slow photoresponse (e.g. with the time constant in the order of milliseconds) due to the relatively long channel length and the substantial surface defect induced carrier trapping, as well as the insufficient detectivity owing to the relatively large dark current. In this work, a simple multilayer MoS2 based photodetector employing vertical Schottky junctions of Au-MoS2-ITO is demonstrated. This unique device structure can significantly suppress the dark current down to 10-12 A and enable the fast photoresponse of 64 μs, together with the stable responsivity of ∼1 A W-1 and the high photocurrent to dark current ratio of ∼106 at room temperature. This vertical-Schottky photodetector can also exhibit a wide detection range from visible to 1000 nm. All these results demonstrate clearly that the vertical Schottky structure is an effective configuration for achieving high-performance optoelectronic devices based on 2D materials.

A room-temperature near-infrared photodetector based on a MoS2/CdTe p-n heterojunction with a broadband response up to 1700 nm

Abstract: High-performance infrared photodetectors (PDs) have attracted much attention due to their great significance in military and industrial applications. The improvement of two-dimensional (2D) materials offers an open platform for designing various high-performance PDs, especially in the infrared region, which can overcome the drawbacks of the traditional epitaxial thin film based PDs, such as the complicated preparation processes, low-temperature operating conditions and inability to be miniaturized. In this work, a high-performance infrared PD based on a MoS2/CdTe p–n heterojunction with type-II band alignment was constructed and investigated. This PD showed a broadband photoresponse from 200 nm to 1700 nm, which is far beyond the band-gaps of MoS2 and CdTe. Moreover, a high responsivity, specific detectivity and fast response speed were achieved. These results demonstrate that the MoS2/CdTe p–n heterojunction has great potential in room-temperature infrared detection, and provide a way to design high-performance infrared PDs for other 2D materials.