Responsivity

About: Responsivity is a research topic. Over the lifetime, 9918 publications have been published within this topic receiving 186118 citations.

A self-powered photodetector based on a CH3NH3PbI3 single crystal with asymmetric electrodes

Abstract: Methylammonium lead iodide perovskite (MAPbI3) has made a re-entry into the literature nowadays for its extraordinary characteristics, such as high absorption of light, long carrier diffusion length, high carrier mobility, low trap-state density, low surface recombination velocity and ease of attainment. Here, we report a self-powered photodetector based on a CH3NH3PbI3 single crystal by employing asymmetric Au–Al electrodes. The key issue of this photodetector was the metal–semiconductor contacts, owing to the Schottky junction between them. By setting the channel length between the Au–Al electrodes to 30 μm for sufficient electron–hole pair separation and transportation, the device showed good performance under 1 sun illumination. The short-circuit photocurrent density and open-circuit voltage were 6.86 mA cm−2 and 0.7 V, respectively. The photocurrent was almost 2 orders of magnitude larger than that based on a perovskite polycrystalline film with a similar device structure. More importantly, the device could detect the lowest noticeable incident power density down to 1 × 10−8 W cm−2. Under this weak light intensity, the responsivity was as high as 0.24 A W−1 without any bias. The photoresponse also had a broadband ranging from 375 nm to 808 nm accompanied by a fast response speed.

100-Gbps RZ Data Reception in 67-GHz Si-Contacted Germanium Waveguide p-i-n Photodetectors

Abstract: We demonstrate 100-Gbps silicon-contacted germanium waveguide p-i-n photodetectors integrated on imec's silicon photonics platform. The performance of 14 and 20 μm long devices is compared. The responsivity of the devices is 0.74 and 0.92 A/W at 1550 nm, respectively.

Interband cascade detectors with room temperature photovoltaic operation

Abstract: We investigated mid-infrared interband cascade laser structures as photodetectors, which are sensitive to normal incidence and operate in photovoltaic mode at room temperature. The proposed operation principle of these interband cascade detectors is based on the unique combination of interband photoexcitation and the much faster intersubband relaxation as well as interband tunneling recombination, which allows for the efficient collection of the photoexcited carriers. Peak responsivity and detectivity of 21 mA/W and 7.1×108cmHz1∕2∕W at λ=4.0μm are obtained for a device with cutoff wavelength of 4.4μm. Peak responsivity and detectivity of 46 mA/W and 1.4×109cmHz1∕2∕W at λ=3.0μm are obtained for another device with cutoff wavelength of 3.3μm. These detectors exhibit low noise (4.8×10−13A∕Hz1∕2) and a large product of the differential resistance and active area (19Ωcm2) at room temperature.

Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure

Abstract: We report on ultrahigh sensitive, broadband terahertz (THz) detectors based on asymmetric dual-grating-gate (A-DGG) high electron mobility transistors, demonstrating a record responsivity of 2.2 kV/W at 1 THz with a superior low noise equivalent power of 15 pW/√Hz using InGaAs/InAlAs/InP material systems. When THz radiation is absorbed strong THz photocurrent is first generated by the nonlinearity of the plasmon modes resonantly excited in undepleted portions of the 2D electron channel under the high-biased sub-grating of the A-DGG (as a quadratic nature of the product of local carrier density and velocity perturbations), then the THz photovoltaic response is read out at high-impedance parts of 2D channel under the other sub-grating biased at the level close to the threshold. Extraordinary enhancement by more than two orders of magnitude of the responsivity is verified with respect to that for a symmetric DGG structure.