Topic
Responsivity
About: Responsivity is a research topic. Over the lifetime, 9918 publications have been published within this topic receiving 186118 citations.
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TL;DR: A multistep method of accurately tailoring graphene into interdigital electrodes for fabricating a sensitive, stable deep-ultraviolet photodetector based on Zn-doped Ga2O3 films that exhibits a series of excellent performance, including extremely low dark current, an ultrahigh photo-to-dark ratio, satisfactory responsivity, and excellent selectivity for the deep-ULTraviolet band.
Abstract: Graphene (Gr) has been widely used as a transparent electrode material for photodetectors because of its high conductivity and high transmittance in recent years. However, the current low-efficiency manipulation of Gr has hindered the arraying and practical use of such detectors. We invented a multistep method of accurately tailoring graphene into interdigital electrodes for fabricating a sensitive, stable deep-ultraviolet photodetector based on Zn-doped Ga2O3 films. The fabricated photodetector exhibits a series of excellent performance, including extremely low dark current (∼10-11 A), an ultrahigh photo-to-dark ratio (>105), satisfactory responsivity (1.05 A/W), and excellent selectivity for the deep-ultraviolet band, compared to those with ordinary metal electrodes. The raise of photocurrent and responsivity is attributed to the increase of incident photons through Gr and separated carriers caused by the built-in electric field formed at the interface of Gr and Ga2O3:Zn films. The proposed ideas and methods of tailoring Gr can not only improve the performance of devices but more importantly contribute to the practical development of graphene.
71 citations
TL;DR: In this paper, a low-capacitance waveguide-integrated photodiode on InP with a minimized absorber length is presented, where an optical matching layer exploiting mode beating effects is employed.
Abstract: A low-capacitance waveguide-integrated photodiode on InP with a minimized absorber length is presented. In order to maintain a high quantum efficiency, an optical matching layer exploiting mode beating effects is employed. Its optimization leads to a twofold enhanced external responsivity of 0.5 A/W at 1.55-/spl mu/m wavelength in accordance with simulation. The reduced p-n junction capacitance enables 3-dB bandwidths up to 120 GHz mainly limited due to carrier transit time effects.
71 citations
TL;DR: In this paper, a pseudomorphic p-type, normal incidence, Ge0.25Si0.75/Si strained layer quantum well infrared photodetector on (001) Si is described for 20≤T≤77 K.
Abstract: Performance characteristics of a pseudomorphic p‐type, normal incidence, Ge0.25Si0.75/Si strained‐layer quantum well infrared photodetector on (001) Si is described for 20≤T≤77 K. The device shows broadband photoresponse (8–14 μm) which is attributed to strain and quantum confinement induced mixing of heavy, light, and split‐off hole bands. Typical device responsivity at λ=10.8 μm is ∼0.04 A/W over the 20–77 K temperature range. A detectivity D*λ=3.3×109 cm √Hz/W was measured at a bias of −2.4 V for a temperature of 77 K at λ=10.8 μm and no cold shield. Room temperature FTIR measurements yield a quantum efficiency η≊3.1% at λp≊8 μm at 300 K.
71 citations
TL;DR: This work investigates what may be regarded as the ultimate level of miniaturization for a spectrometer, in which it consists solely of a detector array, and demonstrates the use of the chip to reconstruct the spectrum of an unknown light source impinging upon it.
Abstract: Spectroscopy is a cornerstone in the field of optics. Conventional spectrometers generally require two elements. The first provides wavelength selectivity, for example, diffraction grating or Michelson interferometer. The second is a detector (or detector array). Many applications would benefit from very small and lightweight spectrometers. This motivates us to investigate what may be regarded as an ultimate level of miniaturization for a spectrometer, in which it consists solely of a detector array. We demonstrate a chip containing 24 pixels, each comprising a silicon nanowire (Si NW) array photodetector formed above a planar photodetector. The NWs are structurally colored, enabling us to engineer the responsivity spectra of all photodetectors in the chip. Each pixel thus combines wavelength selectivity and photodetection functions. We demonstrate the use of our chip to reconstruct the spectrum of an unknown light source impinging upon it. This is achieved by an algorithm that takes as its inputs the measured photocurrents from the pixels and a library of their responsivity spectra.
71 citations
TL;DR: In this article, a near infrared all-silicon (all-Si) photodetector integrated into a silicon-on-insulator waveguide is demonstrated, based on the internal photoemission effect through a metal/Si Schottky junction placed transversally to the optical field confined into the waveguide.
Abstract: In this letter, a near infrared all-silicon (all-Si) photodetector integrated into a silicon-on-insulator waveguide is demonstrated. The device is based on the internal photoemission effect through a metal/Si Schottky junction placed transversally to the optical field confined into the waveguide. The technological steps utilized to fabricate the device allow an efficiently monolithic integration with complementary metal-oxide semiconductor compatible structures. Preliminary results show a responsivity of 0.08 mA/W at 1550 nm with a reverse bias of 1 V and an efficient behavior both in C and L band. Finally, an estimation of bandwidth for GHz range is deduced.
71 citations