Responsivity

About: Responsivity is a research topic. Over the lifetime, 9918 publications have been published within this topic receiving 186118 citations.

High-performance evanescently edge coupled photodiodes with partially p-doped photoabsorption layer at 1.55-/spl mu/m wavelength

Abstract: In this letter, we demonstrate a high-performance evanescently coupled photodiode (ECPD) with the partially p-doped photoabsorption layer. As compared to the control ECPD with the traditional intrinsic photoabsorption layer, the demonstrated device can exhibit much higher output saturation current (power) and electrical bandwidth without sacrificing the quantum efficiency performance. By properly designing the geometry size and epilayer structures of the partially p-doped ECPD, very high responsivity (1.01 A/W), high electrical bandwidth (around 50 GHz), and high saturation current bandwidth product (920 mA/spl middot/GHz, at 40 GHz) have been achieved simultaneously at 1.55-/spl mu/m wavelength.

A silicon avalanche photodetector fabricated with standard CMOS technology with over 1 THz gain-bandwidth product.

Abstract: We present a silicon avalanche photodetector (APD) fabricated with standard complementary metal-oxide-semiconductor (CMOS) technology without any process modification or special substrates. The CMOS-APD is based on N+/P-well junction, and its current-voltage characteristics, responsivity, avalanche gain, and photodetection frequency response are measured. Gain-bandwidth product over 1 THz is achieved with the CMOS-APD having avalanche gain of 569 and 3-dB photodetection bandwidth of 3.2 GHz.

InGaAs Schottky barrier diode array detector for a real-time compact terahertz line scanner

Abstract: We present a terahertz (THz) broadband antenna-integrated 1 × 20 InGaAs Schottky barrier diode (SBD) array detector with an average responsivity of 98.5 V/W at a frequency of 250 GHz, which is measured without attaching external amplifiers and Si lenses, and an average noise equivalent power (NEP) of 106.6 pW/√Hz. The 3-dB bandwidth of the SBD detector is also investigated at approximately 180 GHz. For implementing an array-type SBD detector by a simple fabrication process to achieve a high yield, a structure comprising an SiN(x) layer instead of an air bridge between the anode and the cathode is designed. THz line beam imaging using a Gunn diode emitter with a center frequency of 250 GHz and a 1 × 20 SBD array detector is successfully demonstrated.

A broadband 0.6 to 1 THz CMOS imaging detector with an integrated lens

Abstract: Summary form only given, as follows. This paper presents a lens-integrated terahertz imaging detector implemented in a 65 nm bulk CMOS process technology. The back-side illumination through a silicon lens increases the imaging SNR by 7–15 dB. The broadband detector design has been verified from 0.6 to 1 THz. At 1 THz the circuit achieves a noise equivalent power (NEP) of 66 pW/sqrt(Hz) and a responsivity (Rv) of 800 V/W for back-side illumination. The first 1 THz CMOS active imaging results with a lens are presented.

Characteristics of a terahertz photomixer based on a high-electron mobility transistor structure with optical input through the ungated regions

Abstract: We develop a device model for a terahertz photomixer that utilizes the excitation of plasma oscillations in the channel of a device similar to a high-electron mobility transistor (HEMT). The device design assumes vertical optical input through the ungated source–gate and gate–drain regions. Using this model, we calculate the characteristics of the HEMT photomixer: the responsivity as a function of the signal frequency for devices with different geometrical and physical parameters, and the dependence of resonant frequency on the length of the gated and ungated portions of the channel and the gate voltage. We compare also the performance of the HEMT photomixer with that of a similar device but one in which the optical input is through the substrate.