Topic
Responsivity
About: Responsivity is a research topic. Over the lifetime, 9918 publications have been published within this topic receiving 186118 citations.
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TL;DR: High-density and crystalline stoichiometric InxGa1-xSb NWs exhibiting simultaneously high hole mobility, responsivity, and fast response times in the infrared regime are reported on.
Abstract: Because of tunable bandgap and high carrier mobility, ternary III-V nanowires (NWs) have demonstrated enormous potential for advanced applications. However, the synthesis of large-scale and highly-crystalline InxGa1−xSb NWs is still a challenge. Here, we achieve high-density and crystalline stoichiometric InxGa1−xSb (0.09 -orientation via chemical vapor deposition. The as-prepared NWs show excellent electrical and optoelectronic characteristics, including the high hole mobility (i.e. 463 cm2 V−1 s−1 for In0.09Ga0.91Sb NWs) as well as broadband and ultrafast photoresponse over the visible and infrared optical communication region (1550 nm). Specifically, the In0.28Ga0.72Sb NW device yields efficient rise and decay times down to 38 and 53 μs, respectively, along with the responsivity of 6000 A W−1 and external quantum efficiency of 4.8 × 106 % towards 1550 nm regime. High-performance NW parallel-arrayed devices can also be fabricated to illustrate their large-scale device integrability for next-generation, ultrafast, high-responsivity and broadband photodetectors. The application of ternary nanowires (NWs) in optoelectronics has been hindered by difficulties in producing high quality NWs on silicon substrates. Here, the authors report on InxGa1-xSb NWs exhibiting simultaneously high hole mobility, responsivity, and fast response times in the infrared regime.
68 citations
TL;DR: In this paper, a dual-function InGaAsP waveguide modulator and photodetector was used for high-frequency, high-linear dynamic range (HLSDR) transmission.
Abstract: A Franz-Keldysh effect InGaAsP electroabsorption waveguide device is utilized as a high-frequency, high-linear dynamic range modulator and photodetector. The dual-function modulator/photodetector can be useful in compact transmit/receive front end antenna architectures. Adjusting the electrical bias to the reverse-biased p-i-n diode, either efficient optical modulation or detection is demonstrated. As an electroabsorption modulator, a fiber optic link with a -17.4-dB RF loss and a 124-dB-Hz/sup 4/5/ suboctave spurious-free dynamic range is obtained with electrical biases in the 2 to 3 V range. As a waveguide photodetector, a 0.45-A/W fiber coupled responsivity, photocurrents up to 20 mA, and an output second-order intercept of +34.5 dBm are achieved at 7-V electrical bias.
68 citations
TL;DR: The state to which electrons are excited by infrared absorption and from which they are subsequently collected lies in the continuum above the energy of the Al0.28Ga0.72As conduction band minimum as mentioned in this paper.
Abstract: GaAs quantum well infrared detectors with peak responsivity at 8.2 μm and significant response beyond 10 μm have been demonstrated with detectivities of 4×1011 cm (Hz)1/2 /W at 6 K; this detectivity is the highest reported for a quantum well detector. The detectors comprised 50 GaAs quantum wells of width 40 A with an average Si doping density of 1×1018 cm−3 separated by 280‐A barriers of Al0.28Ga0.72As. In this design, the state to which electrons are excited by infrared absorption and from which they are subsequently collected lies in the continuum above the energy of the Al0.28Ga0.72As conduction‐band minimum. The maximum detector responsivity was mesured to be 0.34 A/W. The device dark current density is 5.5×10−6 A/cm2 with the detector biased for maximum detectivity (3.5 V), and the dark current remains constant with increasing temperature up to 50 K. The detector noise current was observed to be a constant fraction (70%) of the shot noise down to noise currents of 10−14 A/(Hz)1/2. A theoretical mode...
68 citations
TL;DR: In this article, the authors describe the advantages of infrared colloidal quantum dots (CQDs) for photodetection beyond silicon and provide a brief review of the development of CQD photoderivers.
Abstract: This perspective describes the advantages of infrared colloidal quantum dots (CQDs) for photodetection beyond silicon and provides a brief review of the development of CQD photodetection. The standard specifications for photodetectors are listed with particular emphasis on the detectivity. High gain improves the responsivity but does not improve the detectivity, while nonradiative losses do not prevent high responsivity but limit the detectivity. Performances of CQD detectors and HgTe CQDs, in particular, are compared with the maximum possible detectivity based on detailed balance from the device temperature and nonradiative losses.
68 citations
TL;DR: An InGaAs PIN photodiode was vertically integrated with an inverted optical rib waveguide in this article, achieving a responsivity of 0.81 A/W at 1.3?m wave-length.
Abstract: An InGaAs PIN photodiode was vertically integrated with an inverted optical rib waveguide in InGaAsP. Guided light was transferred to and absorbed by the photodiode at a rate of 0.07dB/?m. For detectors with sufficient length (>300?m) a responsivity of 0.81 A/W was achieved at 1.3 ?m wave-length.
68 citations