Responsivity

About: Responsivity is a research topic. Over the lifetime, 9918 publications have been published within this topic receiving 186118 citations.

A High-Responsivity GaN Nanowire UV Photodetector

Abstract: The authors report the conversion of β-Ga2O3 nanowires (NWs) to GaN NWs through ammonification and the fabrication of a GaN NW photodetector (PD). Compared with conventional 2-D GaN PDs, it was found that we could achieve a 1000 times larger photocurrent from the GaN NW PD. It was also found that dynamic response of the GaN NW PD was stable and reproducible with an on/off current contrast ratio of around 1000. Furthermore, it was found that UV-to-visible rejection ratio observed from the GaN NW PD was also larger, as compared to conventional 2-D GaN PDs.

High-quality inorganic–organic perovskite CH3NH3PbI3 single crystals for photo-detector applications

Abstract: Single crystals of organolead trihalide perovskites (CH3NH3PbI3) are supposed to be one of the most promising materials as photo-detectors. Because of their large absorption coefficient, long-range balanced electron, and hole-transport lengths, it is considered to break through the responsivity and efficiency. To systematically investigate the potentiality as photo-detector, high-quality CH3NH3PbI3 single crystals with large size are highly demanded. In the paper, large CH3NH3PbI3 single crystals with various crystal shapes were grown from γ-butyrolactone. At optimized precursor concentration and growth temperature, the growth rate was fixed at about 0.2 mm h−1. Under such growth conditions, the growth steps, originated from screw dislocation on (100) facet, were revealed to be about 0.45 nm. This value is corresponded to half of the unit cell, implying the slow growth rate of (100) facet. With slow growth rate, the absorption edge of the CH3NH3PbI3 single crystal was extended to 860 nm, correlated with a calculated bandgap of ~1.44 eV. By depositing a pair of Au electrodes, a metal–semiconductor–metal (MSM) photo-detector on the basis of the CH3NH3PbI3 single crystal active layer (3 mm) was fabricated and its photo-response features were investigated systematically. About 2.531 A W−1 responsivity was obtained from the device under 780 nm laser illumination, while the external quantum efficiency reached to 396.20 %, better than some GaN, GaAs, and GaP photo-detectors with a MSM device structure.

Plasmonic terahertz detector response at high intensities

Abstract: Recent work on plasmonic terahertz detection using field effect transistors (FETs) has yielded detectors with high responsivity. Therefore, deviation from small signal mode of operation, when the detector signal is simply proportional to the THz intensity, must be considered. This work presents a new analytical model to predict terahertz response in a FET at arbitrary intensity levels. The proposed analytical model was experimentally validated using a 0.13 μm InGaAs high electron mobility transistor and optically pumped CO2 gas laser operating at 1.63 THz of varying output intensities. The model is suitable for implementation in circuit simulators and might be used for device optimization and THz circuit design.

GaN/AlGaN waveguide quantum cascade photodetectors at λ ≈ 1.55 μm with enhanced responsivity and ∼40 GHz frequency bandwidth

Abstract: We report on ultrafast GaN/AlGaN waveguide quantum cascade detectors with a peak detection wavelength of 15 μm Mesa devices with a size of 7 × 7 and 10 × 10 μm2 have been fabricated with radio-frequency impedance-matched access lines A strong enhancement of the responsivity is reported by illuminating the waveguide facet, with respect to illumination of the top surface The room temperature responsivity is estimated to be higher than 95 ± 2 and 78 ± 2 mA/W, while the −3dB frequency response is extracted to be 42 and 374 GHz for 7 × 7 and 10 × 10 μm2 devices, respectively