Responsivity

About: Responsivity is a research topic. Over the lifetime, 9918 publications have been published within this topic receiving 186118 citations.

High gain GaN/AlGaN heterojunction phototransistor

Abstract: A GaN/AlGaN heterojunction bipolar phototransistor having AlGaN contact, i-GaN absorbing, p-GaN base and n-GaN emitter layers formed, in that order, on a UV transparent substrate. The phototransistor has a gain greater than 10 5 . From 360 nm to 400 nm, eight orders of magnitude drop in responsivity was achieved. The phototransistor features a rapid electrical quenching of persistent photoconductivity, and exhibits high dark impedance and no DC drift. By changing the frequency of the quenching cycles, the detection speed of the phototransistor can be adjusted to accommodate specific applications. These results represent an internal gain UV detector with significantly improved performance over GaN based photo conductors.

Space-Confined Growth of Individual Wide Bandgap Single Crystal CsPbCl3 Microplatelet for Near-Ultraviolet Photodetection.

Abstract: Perovskite photodetectors (PDs) with tunable detection wavelength have attracted extensive attention due to the potential application in the field of imaging, machine vision, and artificial intelligence. Most of the perovskite PDs focus on I- or Br-based materials due to their easy preparation techniques. However, their main photodetection capacity is situated in the visible region because of their narrower bandgap. Cl-based wide bandgap perovskites, such as CsPbCl3 , are scarcely reported because of the bad film quality of the spin-coated Cl-based perovskite, due to the poor solubility of the precursor. Therefore, ultraviolet detection using high-quality full inorganic perovskite films, especially with high thermal stability of materials and devices, is still a big challenge. In this work, high-quality single crystal CsPbCl3 microplatelets (MPs) synthesized by a simple space-confined growth method at low temperature for near-ultraviolet (NUV) PDs are reported. The single CsPbCl3 MP PDs demonstrate a decent response to NUV light with a high on/off ratio of 5.6 × 103 and a responsivity of 0.45 A W-1 at 5 V. In addition, the dark current is as low as pA level, leading to detectivity up to 1011 Jones. Moreover, PDs possess good stability and repeatability.

Cross-Bar SnO2-NiO Nanofiber-Array-Based Transparent Photodetectors with High Detectivity

Abstract: An interlaced textile structure has been employed to design a transparent p-n junction-based photodetector. The device consisting of aligned n-SnO2 and p-NiO nanofibers was prepared via a mature electro-spinning process which is suitable for commercial applications. The photodetector showed a high detectivity of 2.33*1013 Jones under 250 nm illumination at -5 V, which outperformed most of the state-of-art SnO2-based UV photodetectors. It was also endowed with a self-powered feature due to a photovoltaic effect from the p-n junction, resulting in a photocurrent of 10-10 A, responsivity of 30.29 mA·W-1 at 0 V bias and detectivity of 2.24*1011 Jones at 0.05 V bias. Moreover, the device was highly transparent (over 90 % towards visible light) due to the wide band gap of photoactive materials and well-designed interlaced fibers structure.