Topic
Responsivity
About: Responsivity is a research topic. Over the lifetime, 9918 publications have been published within this topic receiving 186118 citations.
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TL;DR: In this article, a 63-element linear arrays of micromachined thermopile infrared detectors on silicon substrates were fabricated and tested under vacuum and room temperature conditions, achieving response times of 99 ms, zero frequency D* values of 1.4/spl times/10/sup 9/ cmHz/sup 1/2/W and responsivity values of 1100 V/W when viewing a 1000 K blackbody source.
Abstract: We have fabricated 63-element linear arrays of micromachined thermopile infrared detectors on silicon substrates. Each detector consists of a suspended silicon nitride membrane with 11 thermocouples of sputtered Bi-Te and Bi-Sb-Te films. At room temperature and under vacuum these detectors exhibit response times of 99 ms, zero frequency D* values of 1.4/spl times/ 10/sup 9/ cmHz/sup 1/2//W and responsivity values of 1100 V/W when viewing a 1000 K blackbody source. The only measured source of noise above 20 mHz is Johnson noise from the detector resistance. These results represent the best performance reported to date for an array of thermopile detectors. A test procedure is described that measures many of the relevant electrical, optical, and thermal properties of the detectors without specialized test structures.
60 citations
TL;DR: InGaAs as discussed by the authors exhibit 150 mA continuous photocurrent at 2 W power dissipation with a responsivity of 0.97 A/W at 1319 nm with greater than 60% external quantum efficiency from 920 to 1650 mm.
Abstract: We present novel (InGa)As photodetectors which exhibit 150 mA continuous photocurrent at 2 W power dissipation. A responsivity of 0.97 A/W at 1319 nm is achieved with greater than 60% external quantum efficiency from 920 to 1650 mm. Measured dark currents are below 1 nA and bandwidths of 295 MHz are achieved. These low dark-current devices have utility to applications requiring large output current and large dynamic range.
60 citations
TL;DR: A wavelength-induced photocurrent polarity is observed in the ZnO NWs/SnS photodetector, which enables the device to distinguish between photons in the UV and visible regions and could be useful for improving resolution of dynamic light sensing/imaging.
60 citations
TL;DR: In this paper, the vertical and lateral geometry GaN-based Schottky barrier photodetectors have been implemented, using similar quality material and the same fabrication process.
Abstract: Vertical and lateral geometry GaN-based Schottky barrier photodetectors have been implemented, using similar quality material and the same fabrication process. The vertical detector exhibits two orders of magnitude higher responsivity. This is attributed to improved ohmic backcontacts, due to the highly doped buried layer. The vertical detectors exhibits also lower 1/f noise level, which is attributed to the reduced effect of dislocations on the carrier transport, resulting in lower mobility fluctuations. The vertical detector normalized detectivity is four orders of magnitude higher.
60 citations
TL;DR: In this article, an ultraviolet (UV) photodetector employing the two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface as an interdigitated transducer (IDT) was characterized under optical stimulus.
Abstract: An ultraviolet (UV) photodetector employing the two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface as an interdigitated transducer (IDT) is characterized under optical stimulus. ...
60 citations