scispace - formally typeset
Search or ask a question
Topic

Responsivity

About: Responsivity is a research topic. Over the lifetime, 9918 publications have been published within this topic receiving 186118 citations.


Papers
More filters
Proceedings ArticleDOI
12 Feb 2009
TL;DR: In this paper, a 3x5 Si MOSFET focal plane array (FPA) processed by a 0.25-μm CMOS technology was used for active imaging at terahertz frequencies.
Abstract: We report on imaging at terahertz frequencies using a 3x5 Si MOSFET focal-plane array (FPA) processed by a 0.25-μm CMOS technology. Each pixel of the FPA consists of a 645-GHz patch antenna coupled to a FET detector and a 43-dB voltage amplifier with a 1.6-MHz bandwidth. We achieve a typical single-pixel responsivity of 80 kV/W and a noise-equivalent power (NEP) of 300 pW/√Hz at 30-kHz. The performance data of these all-CMOS devices pave the way for the realization of broad-band THz detectors and FPAs for video-rate active imaging on the basis of established low-cost and integration-friendly CMOS technology.

59 citations

Journal ArticleDOI
TL;DR: In this article, the photo responsivity of a transition metal dichalcogenides (TMD) photodetector was investigated by decorating a thin layer of zinc oxide quantum dots (ZnO-QDs) on MoS2.
Abstract: Transition metal dichalcogenides (TMDs) have been attracting attention because of their applications in optoelectronics and photo-detection. A widely used TMD semiconductor is molybdenum disulfide (MoS2), which has tremendous applications because of its tunable bandgap and high luminescence quantum efficiency. This paper reports on high photo responsivity (Rλ ∼ 1913 A W−1) of MoS2 photodetector by decorating a thin layer of zinc oxide (ZnO) quantum dots (ZnO-QDs) on MoS2. Results show that Rλ increases dramatically to 2267 A W−1 at Vbg = 30 V. The high response of ZnO-QDs/MoS2 heterostructures is attributed to a number of factors, such as effective charge transfer between ZnO-QDs and MoS2 surface and re-absorption of light photon resulting in production of electron–hole pairs.

59 citations

Journal ArticleDOI
TL;DR: In this article, an a-IGZO thin-film phototransistor incorporating graphene absorption layer was proposed to enhance the responsivity and sensitivity simultaneously for photodetection from ultraviolet to visible regime.
Abstract: An a-IGZO thin-film phototransistor incorporating graphene absorption layer was proposed to enhance the responsivity and sensitivity simultaneously for photodetection from ultraviolet to visible regime. The spin-coated graphene dots absorb incident light, transferring electrons to the underlying a-IGZO to establish a photochannel. The 5 A/W responsivity and 1000 photo-to-dark current ratio were achieved for graphene phototransistor at 500 nm. As compared with 2700 transistor gain. The highest responsivity and photo-to-dark current ratio is 897 A/W and $10^{6}$ , respectively, under 340-nm light illumination.

59 citations

Journal ArticleDOI
TL;DR: Graphene has extraordinary electro-optic properties and is therefore a promising candidate for monolithic photonic devices such as photodetectors as discussed by the authors, however, the integration of this atom-thin layer m...
Abstract: Graphene has extraordinary electro-optic properties and is therefore a promising candidate for monolithic photonic devices such as photodetectors. However, the integration of this atom-thin layer m...

59 citations

Journal ArticleDOI
TL;DR: A new standard detector was developed based on a commercial thermopile detector that offers the possibility of tracing back the THz power responsivity scale to the more accurateresponsivity scale in the visible spectral range and thereby to reduce the uncertainty of detector calibrations in the Terahertz range significantly.
Abstract: The metrology institute in Germany, the Physikalisch-Technische Bundesanstalt (PTB), calibrates the spectral responsivity of THz detectors at 2.52 THz traceable to International System of Units. The Terahertz detector calibration facility is equipped with a standard detector calibrated against a cryogenic radiometer at this frequency. In order to extend this service to a broader spectral range in the THz region a new standard detector was developed. This detector is based on a commercial thermopile detector. Its absorber was modified and characterized by spectroscopic methods with respect to its absorptance and reflectance from 1 THz to 5 THz and at the wavelength of a helium-neon laser in the visible spectral range. This offers the possibility of tracing back the THz power responsivity scale to the more accurate responsivity scale in the visible spectral range and thereby to reduce the uncertainty of detector calibrations in the THz range significantly.

59 citations


Network Information
Related Topics (5)
Silicon
196K papers, 3M citations
85% related
Photoluminescence
83.4K papers, 1.8M citations
84% related
Thin film
275.5K papers, 4.5M citations
84% related
Quantum dot
76.7K papers, 1.9M citations
83% related
Band gap
86.8K papers, 2.2M citations
83% related
Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023848
20221,568
2021795
2020718
2019740
2018653