Topic
Responsivity
About: Responsivity is a research topic. Over the lifetime, 9918 publications have been published within this topic receiving 186118 citations.
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TL;DR: In this paper, the effect of polymer coating, pressure, temperature, and light on the electrical characteristics of monolayer WSe 2 back-gated transistors with Ni/ Au contacts was investigated.
Abstract: We study the effect of polymer coating, pressure, temperature, and light on the electrical characteristics of monolayer WSe 2 back-gated transistors with Ni / Au contacts. Our investigation shows that the removal of a layer of poly(methyl methacrylate) (PMMA) or a decrease of the pressure change the device conductivity from p- to n-type. From the temperature behavior of the transistor transfer characteristics, a gate-tunable Schottky barrier at the contacts is demonstrated and a barrier height of ~ 70 meV in the flat-band condition is measured. We also report and discuss a temperature-driven change in the mobility and the subthreshold swing that is used to estimate the trap density at the WSe 2 / SiO 2 interface. Finally, from studying the spectral photoresponse of the WSe 2 , it is proven that the device can be used as a photodetector with a responsivity of ~ 0.5 AW − 1 at 700 nm and 0.37 mW / cm 2 optical power.
58 citations
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TL;DR: This work reports the highest responsivity obtained so far for CdSe colloidal material with values reaching kA·W(-1), corresponding to eight decades of enhancement compared to usual micrometer-scaled architectures.
Abstract: Interparticle charge hopping severely limits the integration of colloidal nanocrystals films for optoelectronic device applications. We propose here to overcome this problem by using high aspect ratio interconnects made of wide electrodes separated by a few tens of namometers, a distance matching the size of a single nanoplatelet. The semiconducting CdSe/CdS nanoplatelet coupling with such electrodes allows an efficient electron–hole pair dissociation despite the large binding energy of the exciton, resulting in optimal photoconductance responsivity. We report the highest responsivity obtained so far for CdSe colloidal material with values reaching kA·W–1, corresponding to eight decades of enhancement compared to usual micrometer-scaled architectures. In addition, a decrease of 1 order of magnitude of the current noise is observed, revealing the reduced influence of the surface traps on transport. The nanotrench geometry provides top access to ion gel electrolyte gating, allowing for a photoresponsive transistor with 104 on/off ratio. A simple analytical model reproduces the device behavior and underlines the key parameters related to its performance.
58 citations
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TL;DR: Results are promising in terms of responsivity, with a value of 13 mA/W measured at 1550 nm - this is among the highest values reported to date for sub-bandgap detectors based on internal photoemission.
Abstract: In this paper we present a sub-bandgap photodetector consisting of a metal grating on a thin metal patch on silicon, which makes use of the enhancement produced by the excitation of surface plasmon polaritons at the metal-silicon interface. The grating is defined via e-beam lithography and Au lift-off on a Au patch defined beforehand by optical lithography on doped p-type silicon. The surface plasmon polaritons are absorbed by the metal, leading to the creation of hot holes that can cross into the silicon where they are collected as the photocurrent. Physical characterization of intermediate structure is provided along with responsivity measurements at telecom wavelengths. Results are promising in terms of responsivity, with a value of 13 mA/W measured at 1550 nm - this is among the highest values reported to date for sub-bandgap detectors based on internal photoemission. The Schottky photodetector can be used in, e.g., non-contact wafer probing or in short-reach optical communications applications.
58 citations
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TL;DR: In this paper, the authors compared the performance of different detectors of triglycline sulfate, triglycine fluoberyllate (TGFB), lithium sulfate (LSS), strontium barium niobate (SBN), polycrystalline TGS, and TGFB under ambient operating or storage conditions between 35° and 60°C.
Abstract: Pyroelectric infrared radiation detectors of triglycline sulfate (TGS), triglycine fluoberyllate (TGFB), lithium sulfate, strontium barium niobate (SBN), and polycrystalline TGS are compared for responsivity, noise, and detectivity as a function of temperature. TGS, which currently exhibits the highest responsivity and detectivity at ambient temperature from 0.01 Hz to at least 10 KHz, is still one order of magnitude away in detectivity from an ideal thermal detector. Under ambient operating or storage conditions between 35° and 60°C, TGFB is the choice over TBS. Some spectral data is also presented.
58 citations
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TL;DR: The experimental results indicate that the LAO detectors have attractive potential applications in DUV detection.
Abstract: Solar-blind deep-ultraviolet (DUV) photoconductive detectors based on an LaAlO3 (LAO) single crystal with interdigitated electrodes are reported. The LAO detectors show a high sensitivity to DUV light with wavelengths less than 210 nm, and the DUV/UV (200 versus 290 nm) contrast ratio is more than 2 orders of magnitude. The photocurrent responsivity of LAO detector reaches 71.8 mA/W at 200 nm at 10 V bias, and the corresponding quantum efficiency η is 44.6%. The noise current under sunlight at midday outdoors is only 77 pA. The experimental results indicate that the LAO detectors have attractive potential applications in DUV detection.
58 citations