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Responsivity

About: Responsivity is a research topic. Over the lifetime, 9918 publications have been published within this topic receiving 186118 citations.


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Journal ArticleDOI
TL;DR: In this paper, a large-scale image sensor array (1250 pixels) based on a MXene/perovskite/MXene structure is demonstrated by utilizing top-down techniques, i.e. spin-coating and laser-scribing.
Abstract: Solution-processed materials, including halide perovskites and newly discovered MXenes, are emerging as promising candidates for next-generation optoelectronic devices. Here, large-scale image sensor arrays (1250 pixels) based on a MXene/perovskite/MXene structure are demonstrated by utilizing top-down techniques, i.e. spin-coating and laser-scribing. The work allows processing perovskite and MXene materials into sub-millimeter photodetector arrays on a large scale with potential for further down-scaling of the device dimensions. The favorable energy level alignment and resonance enhancement of such materials enable efficient charge transfer and detection up to the near infrared region. A high responsivity of 84.77 A W−1, a high specific detectivity of 3.22 × 1012 Jones, and a large linear dynamic range (LDR) up to 82 dB in a broadband wavelength range from visible to near-infrared are achieved. In addition, the device shows an excellent image-capture capability under near infrared illumination. Given the tunability and compatibility with complementary metal–oxide–semiconductors (CMOS), the method potentially promotes the development of low-cost, high-performance, and large format photodetector arrays.

57 citations

Journal ArticleDOI
TL;DR: In this paper, the effects of key receiver impairments on the performance of differential phase-shift keying (DPSK), like the responsivity imbalance between the two arms of the receiver balanced photodetector and the detuning of the asymmetric Mach-Zehnder filter, are analyzed.
Abstract: The goal of this paper is to analyze the effects of key receiver impairments on the performance of differential phase-shift keying (DPSK), like the responsivity imbalance between the two arms of the receiver balanced photodetector and the detuning of the asymmetric Mach-Zehnder filter. We extend to DPSK a semianalytical technique, based on the Karhunen-Loe/spl grave/ve series expansion, which can be used to obtain reliable performance results in the simulation of IM/DD optical systems. We show that the DPSK receiver imperfections may substantially decrease the sensitivity gain of DPSK over standard IM/DD systems. In particular, the performance turns out to be remarkably insensitive to the responsivity imbalance between the two arms of the receiver balanced photodetector but highly sensitive to the detuning of the asymmetric Mach-Zehnder filter. We also analyze the validity of the application of the Q parameter evaluation, which is extensively used in theory and simulation of intensity-modulation direct-detection (IM/DD) optical systems, to the study of the bit error rate performance of direct-detection DPSK optical systems, showing that its inaccuracy can be very large.

57 citations

Patent
Jr. Paul W. Kruse1
03 Nov 1992
TL;DR: In this paper, a thin film pyroelectric imaging array (N, M) fabricated as a Si wafer is deposited on a thermally isolated bridge, which suspends the PbTiO3 sensor over a preferentially etched cavity.
Abstract: A thin film pyroelectric imaging array (N, M) fabricated as a Si wafer. A thin film (40) of PbTiO3 is deposited on a thermally isolated bridge (45). The bridge (45) suspends the PbTiO3 sensor (40) over a preferentially etched cavity (70) in the Si wafer (10). Improved thermal isolation increases the responsivity of the sensor (33) to incident radiation. The pyroelectric sensor (33) formed can operate effectively at room temperature.

57 citations

Journal ArticleDOI
TL;DR: A novel size-controllable germanium quantum dot (Ge QD) is synthesized and decorated onto reduced graphene oxide (RGO) fragments to overcome the low infrared (IR) photoresponses of pristine graphene and manifests great potential in the future application of graphene-based IR photodetector.
Abstract: A novel size-controllable germanium quantum dot (Ge QD) is synthesized and decorated onto reduced graphene oxide (RGO) fragments to overcome the low infrared (IR) photoresponses (∼0.1 A/W)13,14 of pristine graphene. With the integration of flexible substrate, monolayer graphene (MLG) electrode and n-type zinc oxide (ZnO), a high-performance QD-decorated-RGO/ZnO heterostructure infrared photodetector is reported in this study. The Ge QD-decorated-RGO hybrid photosensitive composite improves the responsivity (∼9.7 A/W, 1400 nm) in IR waveband without sacrificing the response speed (∼40 μs rise time and 90 μs recovery time). In addition, the effective barrier formed between graphene and ZnO interface restricts the dark current (∼1.4 nA, -3 V) to guarantee the relatively excellent rectifying behavior and high on/off ratio (∼10(3)) for this IR photodetector. With these superior inherent properties and micron-sized sensing active area, this photodetector manifests great potential in the future application of graphene-based IR photodetector.

57 citations

Journal ArticleDOI
TL;DR: In this article, a normal-incidence GeSn-based p-i-n photodetectors (PDs) with a Ge0.94Sn0.06 active layer grown using sputter epitaxy on a Ge(100) substrate was investigated.
Abstract: We report an investigation of normal-incidence GeSn-based p-i-n photodetectors (PDs) with a Ge0.94Sn0.06 active layer grown using sputter epitaxy on a Ge(100) substrate. A low dark current density of 0.24 A/cm2 was obtained at a reverse bias of 1 V. A high optical responsivity of the Ge0.94Sn0.06/Ge p-i-n PDs at zero bias was achieved, with an optical response wavelength extending to 1985 nm. The temperature-dependent optical-response measurement was performed, and a clear redshift absorption edge was observed. This work presents an approach for developing efficient and cost-effective GeSn-based infrared devices.

57 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023848
20221,568
2021795
2020718
2019740
2018653