Topic
Responsivity
About: Responsivity is a research topic. Over the lifetime, 9918 publications have been published within this topic receiving 186118 citations.
Papers published on a yearly basis
Papers
More filters
TL;DR: In this article, the frequency response and quantum efficiency of silicon-on-insulator (SOI) metal-semiconductor-metal photodetectors in the near-infrared (∼800 nm) are greatly enhanced with a simple reactive ion etching to form electrodes inside the interdigitated trenches.
Abstract: The frequency response and quantum efficiency (QE) of silicon‐on‐insulator (SOI) metal‐semiconductor‐metal photodetectors in the near‐infrared (∼800 nm) are greatly enhanced with a simple reactive ion etching to form electrodes inside the interdigitated trenches. Detectors with 1.25 μm trench spacing were fabricated on a SOI substrate with a 6‐μm‐thick silicon top layer. The unique device structure isolates carriers generated deep inside the semiconductor substrate and at the same time provides a highly uniform electric field throughout the active region of the detector, resulting in an instrumentation limited response time of 23 ps at 5 V bias and a −3 dB bandwidth of 2.3 GHz as measured at 790 nm. The dc responsivity is 0.12 A/W, corresponding to an external QE of 18.7% and an internal QE of 88.5%. The large bandwidth and good responsivity at the wavelength of interest, combined with their low operating voltages, make these detectors attractive for use in short‐distance optical communication systems.
56 citations
TL;DR: In this article, high performance ultraviolet (UV) detectors based on ZnO metal-semiconductor-metal (MSM) and p-NiO/n-ZnO, were fabricated and their UV photo-responsivity was measured at room temperature.
56 citations
TL;DR: The fabrication of superior performance ultraviolet photodetector utilizing graphene quantum dots (GQDs) as sensitization agent on ZnO-Nanorods/GaN-N Nanotowers heterostructure has been realized and displays substantial impact on the electrical as well as the optical performance of heterojunction UV photodentector.
Abstract: The fabrication of a superior-performance ultraviolet (UV) photodetector utilizing graphene quantum dots (GQDs) as a sensitization agent on a ZnO-nanorod/GaN-nanotower heterostructure has been realized. GQD sensitization displays substantial impact on the electrical as well as the optical performance of a heterojunction UV photodetector. The GQD sensitization stimulates charge carriers in both ZnO and GaN and allows energy band alignment, which is realized by a spontaneous time-correlated transient response. The fabricated device demonstrates an excellent responsivity of 3.2 × 103 A/W at -6 V and displays an enhancement of ∼265% compared to its bare counterpart. In addition, the fabricated heterostructure UV photodetector exhibits a very high external quantum efficiency of 1.2 × 106%, better switching speed, and signal detection capability as low as ∼50 fW.
56 citations
TL;DR: In this article, the SU-8 passivation was used for reducing surface leakage current in type-II InAs/GaSb strained layer superlattice detectors (λ100% cut-off∼12μm).
Abstract: We report on SU-8 passivation for reducing surface leakage current in type-II InAs/GaSb strained layer superlattice detectors (λ100% cut-off∼12 μm). The electrical behavior of SU-8 passivated and unpassivated devices was compared for devices with variable mesa sizes. Dark current was reduced by more than one order of magnitude for the small area (50 μm×50 μm) passivated diode at 77 K. The surface resistivity, the responsivity and specific detectivity were measured for SU-8 passivated devices and are equal to 204 Ω cm, 0.58 A/W and 3.49×109 Jones, respectively (77 K).
56 citations
TL;DR: In this article, the effect of the image intensity on the sensor output characteristics (sensitivity, linearity, blooming, resolution, and signal-to-noise ratio) are analyzed for different material composition.
Abstract: Amorphous and microcrystalline glass/ZnO:Al/p(a-Si:H)/i(a-Si:H)/n(a-Si 1 - x C x :H)/Al imagers with different n-layer resistivities were produced by plasma-enhanced chemical vapor deposition technique (PE-CVD). The transducer is a simple, large area p-i-n photodiode; an image projected onto the sensing element leads to spatially confined depletion regions that can be readout by scanning the photodiode with a low-power modulated laser beam. The essence of the scheme is the analog readout and the absence of semiconductor arrays or electrode potential manipulations to transfer the information coming from the transducer. The effect of the image intensity on the sensor output characteristics (sensitivity, linearity, blooming, resolution, and signal-to-noise ratio) are analyzed for different material composition. The results show that the responsivity and the spatial resolution are limited by the conductivity of the doped layers. An enhancement of one order of magnitude in the image intensity and on the spatial resolution is achieved with a responsivity of 0.2 mW/cm 2 by decreasing the n-layer conductivity by the same amount. In a 4 x 4 cm 2 laser-scanned photodiode (LSP) sensor, the resolution was less than 100 μm and the signal-to-noise (S/N) ratio was about 32 dB. A physical model supported by electrical simulation gives insight into the methodology used for image representation.
56 citations