Responsivity

About: Responsivity is a research topic. Over the lifetime, 9918 publications have been published within this topic receiving 186118 citations.

Silicon resonant cavity enhanced photodetector based on the internal photoemission effect at 1.55μm: Fabrication and characterization

Abstract: In this paper, the realization and the characterization of a resonant cavity enhanced (RCE) photodetector, completely silicon compatible and working at 1.55μm, are reported. The detector is a RCE structure incorporating a Schottky diode and its working principle is based on the internal photoemission effect. Taking advantage of a Cu∕Si Schottky diode fed on a high reflectivity Bragg mirror, an improvement in responsivity at 1.55μm is experimentally demonstrated.

Bandgap-engineered GaAsSb alloy nanowires for near-infrared photodetection at 1.31 μm

Abstract: Single-nanowire photodetectors have potential applications in integrated optoelectronic devices and systems. Here, bandgap-engineered GaAs0.26Sb0.74 alloy nanowires were synthesized via a chemical vapor deposition method. The synthesized nanowires are single crystals grown along the [111]B direction with length up to 50 μm and diameter ranging from 40 to 500 nm. Photodetectors are built based on these single-alloy nanowires, which show a wide response in the near-infrared region with a high response peak located in the optical communication region (1.31 μm), as well as an external quantum efficiency of 1.62 × 105%, a responsivity of 1.7 × 103 A W−1 and a short response time of 60 ms. These novel near-infrared photodetectors may find promising potential applications in integrated infrared photodetection, thermal imaging, information communication and processing.

High-performance metal-semiconductor-metal InGaN photodetectors using CaF2 as the insulator

Abstract: The authors report on the high-performance metal-semiconductor-metal (MSM) photodetectors (PDs) fabricated on high-quality InGaN film by introducing a superwide bandgap calcium fluoride (CaF2) as the insulator. The dark current of the PDs with CaF2 is drastically reduced by six orders of magnitude compared with those without CaF2, resulting in an extremely high discrimination ratio larger than 106 between ultraviolet and visible light. The responsivity at 338 nm is as high as 10.4 A/W biased at 2 V, corresponding to a photocurrent gain around 40. The CaF2 layer behaves as an excellent insulator for the InGaN-based MSM-PDs in dark condition, while it allows the electron injection through the metal/semiconductor interface under ultraviolet illumination, contributing to the photocurrent gain without sacrificing the response time (∼ms).

Three-Dimensional Topological Insulator Bi2Te3/Organic Thin Film Heterojunction Photodetector with Fast and Wideband Response from 450 to 3500 Nanometers.

Abstract: In the pursuit of broadband photodetection materials from visible to mid-IR region, the fresh three-dimensional topological insulators (3D TIs) are theoretically predicted to be a promising candidate due to its Dirac-like stable surface state and high absorption rate. In this work, a self-powered inorganic/organic heterojunction photodetector based on n-type 3D TIs Bi2Te3 combined with p-type pentacene thin film was designed and fabricated. Surprisingly, it was found that the Bi2Te3/pentacene heterojunction photodetector exhibited a fast and wideband response from 450 to 3500 nm. The optimized responsivity of photodetector reached 14.89 A/W, along with the fast response time of 1.89 ms and the ultrahigh external quantum efficiency of 2840%. Moreover, at the mid-IR 3500 nm, our devices demonstrated a responsivity of 1.55 AW–1, which was several orders of magnitude higher than that of previous 3D TIs photodetector. These excellent properties indicate that the inorganic/organic heterojunction, that is, the c...

Solution-Processed Transparent Self-Powered p-CuS-ZnS/n-ZnO UV Photodiode

Abstract: Transparent diodes formed by a heterojunction between p-type CuS–ZnS and n-type ZnO thin films were fabricated by sequential chemical bath deposition and sol-gel spin coating. The diodes are transparent in the visible (≈70% at 550 nm) and exhibit a good rectifying characteristics, with If/Ir ratios of up to 800 at ±1 V, higher than most of the reported solution-processed diodes measured at a similar bias. More importantly, when operated as a self-powered (zero bias) UV photodetector, they show stable and fast (<1 s) photoresponse with a maximum responsivity of 12 mA W−1 at 300 nm. Both the response time and responsivity of the p-CuZnS/n-ZnO UV photodiode are comparable or superior to similar solution-processed devices reported in the literature.