Responsivity

About: Responsivity is a research topic. Over the lifetime, 9918 publications have been published within this topic receiving 186118 citations.

Ultrabroadband MoS2 Photodetector with Spectral Response from 445 to 2717 nm.

Abstract: Photodetectors with excellent detecting properties over a broad spectral range have advantages for the application in many optoelectronic devices. Introducing imperfections to the atomic lattices in semiconductors is a significant way for tuning the bandgap and achieving broadband response, but the imperfection may renovate their intrinsic properties far from the desire. Here, by controlling the deviation from the perfection of the atomic lattice, ultrabroadband multilayer MoS2 photodetectors are originally designed and realized with the detection range over 2000 nm from 445 nm (blue) to 2717 nm (mid-infrared). Associated with the narrow but nonzero bandgap and large photoresponsivity, the optimized deviation from the perfection of MoS2 samples is theoretically found and experimentally achieved aiming at the ultrabroadband photoresponse. By the photodetection characterization, the responsivity and detectivity of the present photodetectors are investigated in the wavelength range from 445 to 2717 nm with the maximum values of 50.7 mA W-1 and 1.55 × 109 Jones, respectively, which represent the most broadband MoS2 photodetectors. Based on the easy manipulation, low cost, large scale, and broadband photoresponse, this present detector has significant potential for the applications in optoelectronics and electronics in the future.

A superconducting bolometer with strong electrothermal feedback

Abstract: We present a theoretical analysis and experimental evaluation of a transition‐edge superconducting bolometer for detecting infrared and millimeter waves. The superconducting film is voltage biased and the current is read by a superconducting quantum interference device ammeter. Strong electrothermal feedback maintains the sensor temperature within the transition, gives a current responsivity that is simply the inverse of the bias voltage, and reduces the response time by several orders of magnitude below the intrinsic time constant C/G. We evaluated a voltage‐biased bolometer that operates on the Tc∼95 mK transition of a tungsten film with a thermal conductance of G∼1.2×10−9 W/K. As expected, the electrical noise equivalent power of 3.3×10−17/W√Hz is close to the thermal fluctuation noise limit and is lower than that of other technologies for these values of G and temperature. The measured time constant of 10 μs is ∼100 times faster than the intrinsic time constant.

High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide

Abstract: We report the experimental demonstration of a germanium metal-semiconductor-metal (MSM) photodetector integrated in a SOI rib waveguide. Femtosecond pulse and frequency experiments have been used to characterize such photodetectors. The measured bandwidth under 6V bias is about 25 GHz at 1.55 µm wavelength with a responsivity as high as 1 A/W. The used technological processes are compatible with complementary-metal-oxide-semiconductor (CMOS) technology.

Room-Temperature Fabricated Amorphous Ga2O3 High-Response-Speed Solar-Blind Photodetector on Rigid and Flexible Substrates

Abstract: A solution to the fabrication of amorphous Ga2O3 solar-blind photodetectors on rigid and flexible substrates at room temperature is reported. A robust improvement in the response speed is achieved by delicately controlling the oxygen flux in the reactive radio frequency magnetron sputtering process. Temporal response measurements show that the detector on quartz has a fast decay time of 19.1 µs and a responsivity of 0.19 A W−1 as well, which are even better than those single crystal Ga2O3 counterparts prepared at high temperatures. X-ray photoelectron spectroscopy and current–voltage tests suggest that the reduced oxygen vacancy concentration and the increased Schottky barrier height jointly contribute to the faster response speed. Amorphous Ga2O3 solar-blind photodetector is further constructed on polyethylene naphthalate substrate. The flexible devices demonstrate similar photoresponse behavior as the rigid ones, and no significant degradation of the device performance is observed in bending states and fatigue tests. The results reveal the importance of finely tuned oxygen processing gas in promoting the device performance and the applicability of room-temperature synthesized amorphous Ga2O3 in fabrication of flexible solar-blind photodetectors.