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Responsivity

About: Responsivity is a research topic. Over the lifetime, 9918 publications have been published within this topic receiving 186118 citations.


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Journal ArticleDOI
TL;DR: The photocurrent behavior of single GaN n-i-n nanowires grown by plasma-assisted molecular-beam epitaxy on Si(111) presents a photoconductive gain in the range of 10(5)-10(8) and an ultraviolet (350 nm) to visible (450 nm) responsivity ratio larger than 6 orders of magnitude.
Abstract: We report on the photocurrent behavior of single GaN n–i–n nanowires (NWs) grown by plasma-assisted molecular-beam epitaxy on Si(111). These structures present a photoconductive gain in the range of 105–108 and an ultraviolet (350 nm) to visible (450 nm) responsivity ratio larger than 6 orders of magnitude. Polarized light couples with the NW geometry with a maximum photoresponse for polarization along the NW axis. The photocurrent scales sublinearly with optical power, following a I ∼ Pβ law (β < 1) in the measured range with β increasing with the measuring frequency. The photocurrent time response remains in the millisecond range, which is in contrast to the persistent (hours) photoconductivity effects observed in two-dimensional photoconductors. The photocurrent is independent of the measuring atmosphere, either in the air or in vacuum. Results are interpreted taking into account the effect of surface states and the total depletion of the NW intrinsic region.

152 citations

Journal ArticleDOI
Junfeng Lu1, Chunxiang Xu1, Jun Dai1, Jitao Li1, Yueyue Wang1, Yi Lin1, Panlin Li1 
TL;DR: The results demonstrated that the plasmon-enhanced ZnO NRA photodetector has a great potential for application in building sensors with a fast response and reset time, high sensitivity, and good signal-to-noise ratio for photoelectric sensing.
Abstract: In this study, localized surface plasmon resonance mediated by aluminium nanoparticles (Al NPs) was employed to enhance the ultraviolet (UV) response of ZnO nanorod array (NRA) photodetectors grown vertically on a Quartz substrate using a simple vapor transport method. The responsivity of the ZnO NRA photodetector decorated with Al NPs was enhanced from 0.12 to 1.59 A W−1 and the sensitivity and response rate have been improved greatly compared with those of the bare one. The measurement results in the transmittance spectra and time-resolved photoluminescence spectra suggest that the improved photoresponse and the enhanced spontaneous emission of the ZnO NRA photodetector with Al NP decoration are both attributed to resonant coupling between the excitons in ZnO and the localized surface plasmons (LSPs) in the Al NPs. Our results demonstrated that the plasmon-enhanced ZnO NRA photodetector has a great potential for application in building sensors with a fast response and reset time, high sensitivity, and good signal-to-noise ratio for photoelectric sensing.

152 citations

Journal ArticleDOI
TL;DR: In this article, a self-powered solar-blind photodetector based on a MoS2/β-Ga2O3 heterojunction was demonstrated, which exhibits a remarkable rectifying characteristic with a rectification ratio over 105 and excellent solar blind photoresponse properties with a cut-off wavelength of 260 nm and a high rejection ratio of 1.6 × 103.
Abstract: High-performance solar-blind photodetectors have attracted significant attention due to their great significance in military and industrial applications. In this work, a high-performance self-powered solar-blind photodetector based on a MoS2/β-Ga2O3 heterojunction was demonstrated. The photodetector exhibits a remarkable rectifying characteristic with a rectification ratio over 105 and excellent solar-blind photoresponse properties with a cut-off wavelength of 260 nm and a high rejection ratio of 1.6 × 103. Under light illumination of 245 nm (20.1 μW cm−2), the MoS2/β-Ga2O3 heterojunction photodetector shows a responsivity of 2.05 mA W−1 and a specific detectivity of 1.21 × 1011 Jones at zero bias voltage. Such high-performances of this photodetector are superior to other previously reported β-Ga2O3 based photodetectors, and provide a guideline to design high-performance self-powered solar-blind photodetectors.

151 citations

Journal ArticleDOI
TL;DR: A structurized 3D heterojunction of RGO-MoS2 /pyramid Si is demonstrated via a simple solution-processing method, and the detectivity value sets a new record for the 2DMD-based photodetectors reported thus far.
Abstract: Molybdenum disulfide (MoS2 ), a typical 2D metal dichalcogenide (2DMD), has exhibited tremendous potential in optoelectronic device applications, especially in photodetection. However, due to the weak light absorption of planar mono-/multilayers, limited cutoff wavelength edge, and lack of high-quality junctions, most reported MoS2 -based photodetectors show undesirable performance. Here, a structurized 3D heterojunction of RGO-MoS2 /pyramid Si is demonstrated via a simple solution-processing method. Owing to the improved light absorption by the pyramid structure, the narrowed bandgap of the MoS2 by the imperfect crystallinity, and the enhanced charge separation/transportation by the inserted reduced graphene oxide (RGO), the assembled photodetector exhibits excellent performance in terms of a large responsivity of 21.8 A W-1 , extremely high detectivity up to 3.8 × 1015 Jones (Jones = cm Hz1/2 W-1 ) and ultrabroad spectrum response ranging from 350 nm (ultraviolet) to 4.3 µm (midwave infrared). These device parameters represent the best results for MoS2 -based self-driven photodetectors, and the detectivity value sets a new record for the 2DMD-based photodetectors reported thus far. Prospectively, the design of novel 3D heterojunction can be extended to other 2DMDs, opening up the opportunities for a host of high-performance optoelectronic devices.

151 citations

Journal ArticleDOI
TL;DR: In this paper, a quasi-optical broadband terahertz detector using a zero bias Schottky diode mounted on a self-complimentary sinuous antenna has been developed.
Abstract: A quasi-optical broadband terahertz detector using a zero bias Schottky diode mounted on a self-complimentary sinuous antenna has been developed. Design and characterization of this detector are described. Measurements show that a responsivity of 300-1000 V/W covering the frequency range of 150-440 GHz has been achieved. The detector performance has been compared to waveguide detectors covering four frequency bands up to 600 GHz. A recent measurement at 600-900 GHz yielded the same output voltage as a waveguide detector. The noise equivalent power level of this detector is estimated to be 5-20 pW/√(Hz) based on the measurements of similar detectors.

151 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023848
20221,568
2021795
2020718
2019740
2018653