Topic
Responsivity
About: Responsivity is a research topic. Over the lifetime, 9918 publications have been published within this topic receiving 186118 citations.
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TL;DR: In this paper, a heterojunction band gap engineered type-II InAs/GaSb strained layer superlattice photodiode for long-wave infrared detection was reported.
Abstract: We report here a heterojunction band gap engineered type-II InAs/GaSb strained layer superlattice photodiode for longwave infrared detection. The reported PbIbN architecture shows improved performance over conventional PIN design due to unipolar current blocking layers. At 77 K and Vb=−0.25 V, responsivity of 1.8 A/W, dark current density of 1.2 mA/cm2, single pass quantum efficiency of 23%, and shot noise limited detectivity (D∗) of 8.7×1010 cm Hz1/2 W−1 (λc=10.8 μm) were measured. The device demonstrated background limited performance at 100 K under 300 K for 2π field of view.
139 citations
TL;DR: The synthesis of GaSb/GaInSb p-n heterojunction semiconductor nanowires for the first time through a controllable chemical vapor deposition (CVD) route is reported, which shows promising potential applications in integrated photonics and optoelectronics devices or systems.
Abstract: Nanoscale near-infrared photodetectors are attractive for their potential applications in integrated optoelectronic devices. Here we report the synthesis of GaSb/GaInSb p-n heterojunction semiconductor nanowires for the first time through a controllable chemical vapor deposition (CVD) route. Based on these nanowires, room-temperature, high-performance, near-infrared photodetectors were constructed. The fabricated devices show excellent light response in the infrared optical communication region (1.55 mu m), with an external quantum efficiency of 10(4), a responsivity of 10(3) A/W, and a short response time of 2 ms, which shows promising potential applications in integrated photonics and optoelectronics devices or systems.
138 citations
TL;DR: In this paper, the authors reported the most recent advance in the area of type II InAs/GaSb superlattice photovoltaic detectors that have cutoff wavelengths beyond 25 μm, with some at nearly 32 μm.
Abstract: We report the most recent advance in the area of type II InAs/GaSb superlattice photovoltaic detectors that have cutoff wavelengths beyond 25 μm, with some at nearly 32 μm. The photodiodes with a heterosuperlattice junction showed Johnson noise limited peak detectivity of 1.05×1010 cm Hz1/2/W at 15 μm under zero bias, and peak responsivity of 3 A/W under −40 mV reverse bias at 34 K illuminated by ∼300 K background with a 2π field-of-view. The maximum operating temperature of these detectors ranges from 50 to 65 K. No detectable change in the blackbody response has been observed after 5–6 thermal cyclings, with temperature varying between 15 and 296 K in vacuum.
138 citations
TL;DR: It is found that the detector responsivity is slightly compromised by the heat of processing and the coating properties are substrate dependent, but it is possible to achieve nearly ideal values of detector reflectance uniformly less than 0.1% from 400 nm to 4 microm and less than 1% from 4 to 14 microm.
Abstract: Vertically aligned multiwall carbon nanotubes were grown by water-assisted chemical vapor deposition on a large-area lithium tantalate pyroelectric detector. The processing parameters are nominally identical to those by which others have achieved the "world's darkest substance" on a silicon substrate. The pyroelectric detector material, though a good candidate for such a coating, presents additional challenges and outcomes. After coating, a cycle of heating, electric field poling, and cooling was employed to restore the spontaneous polarization perpendicular to the detector electrodes. The detector responsivity is reported along with imaging as well as visible and infrared reflectance measurements of the detector and a silicon witness sample. We find that the detector responsivity is slightly compromised by the heat of processing and the coating properties are substrate dependent. However, it is possible to achieve nearly ideal values of detector reflectance uniformly less than 0.1% from 400 nm to 4 microm and less than 1% from 4 to 14 microm.
138 citations
TL;DR: Fabricated n-MoS2/p-Si 0D/3D heterojunctions exhibiting excellent rectification behavior have been studied for light emission in the forward bias and photodetection in the reverse bias and are found to be superior to the reported results on large areaPhotodetector devices fabricated using two dimensional materials.
Abstract: Silicon compatible wafer scale MoS2 heterojunctions are reported for the first time using colloidal quantum dots. Size dependent direct band gap emission of MoS2 dots are presented at room temperature. The temporal stability and decay dynamics of excited charge carriers in MoS2 quantum dots have been studied using time correlated single photon counting spectroscopy technique. Fabricated n-MoS2/p-Si 0D/3D heterojunctions exhibiting excellent rectification behavior have been studied for light emission in the forward bias and photodetection in the reverse bias. The electroluminescences with white light emission spectra in the range of 450–800 nm are found to be stable in the temperature range of 10–350 K. Size dependent spectral responsivity and detectivity of the heterojunction devices have been studied. The peak responsivity and detectivity of the fabricated heterojunction detector are estimated to be ~0.85 A/W and ~8 × 1011 Jones, respectively at an applied bias of −2 V for MoS2 QDs of 2 nm mean diameter. The above values are found to be superior to the reported results on large area photodetector devices fabricated using two dimensional materials.
137 citations