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Responsivity

About: Responsivity is a research topic. Over the lifetime, 9918 publications have been published within this topic receiving 186118 citations.


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Journal ArticleDOI
TL;DR: In this paper, the authors demonstrate high spectral responsivity (SR) in MBE grown epitaxial Ga2O3-based solar blind MSM photodetectors (PD).
Abstract: In this report, we demonstrate high spectral responsivity (SR) in MBE grown epitaxial \b{eta}-Ga2O3-based solar blind MSM photodetectors (PD). (-2 0 1)-oriented \b{eta}-Ga2O3 thin film was grown by plasma-assisted MBE on c-plane sapphire substrates. MSM devices fabricated with Ni/Au contacts in an interdigitated geometry were found to exhibit peak SR > 1.5 A/W at 236-240 nm at a bias of 4 V with a UV to visible rejection ratio > 105. The devices exhibited very low dark current 103. These results represent the state-of-art performance for MBE-grown \b{eta}-Ga2O3 MSM solar blind detector.

135 citations

Journal ArticleDOI
TL;DR: In this article, a large-area 2D layered PtSe2 thin film was used to construct the PtSeSe2/CdTe heterojunction infrared photodetector (PD), which exhibited a broad detection range coverage from 200 to 2000 nm with a high response speed of 81/436 μs at room temperature.
Abstract: The rich variety and attractive properties of two-dimensional (2D) layered nanomaterials provide an ideal platform for fabricating next generation of advanced optoelectronic devices Recently, a newly discovered 2D layered PtSe2 thin film has exhibited outstanding broadband sensitivity and optoelectronic properties In our work, a large-area 2D layered PtSe2 thin film was used to construct the PtSe2/CdTe heterojunction infrared photodetector (PD) This PD exhibited a broad detection range coverage from 200 to 2000 nm with a high responsivity of 5065 mA/W, a high specific detectivity of 42 × 1011 Jones, a high current on/off ratio of 7 × 106, and a fast response speed of 81/436 μs at room temperature Additionally, the PtSe2/CdTe heterojunction PD exhibits excellent repeatability and stability in air The high-performance of the PtSe2/CdTe heterojunction PD demonstrated in this work reveals that it has great potential to be used for broadband infrared detection

134 citations

Journal ArticleDOI
TL;DR: In this article, a simple spincoating process is successfully adopted to incorporate MAPbI3 quantum dots (QDs) onto the surface of TiO2 NTs to form a heterostructure, extending the response range from ultraviolet to visible.
Abstract: Broadband photodetectors based on TiO2 nanotubes (NTs) array have significant prospects in many fields such as environmental monitoring. Herein, a simple spin-coating process is successfully adopted to incorporate MAPbI3 quantum dots (QDs) onto the surface of TiO2 NTs to form a heterostructure, extending the response range of TiO2 NT from ultraviolet to visible. Compared with pure TiO2 NTs, the heterostructure demonstrates an improvement of responsivity in visible range by three orders of magnitude, and maintains its response performance in the UV range simultaneously. The TiO2 NTs based heterostructure photodetectors demonstrate a relative fast and stable response in the 300–800 nm range and even have a reponsivity of 0.2 A W−1 at 700 nm. The photoelectric performance of the hybrid photodetector based on TiO2 NTs maintains well when exposed to moist air for 72 h or heated from room temperature to 100 °C. Moreover, such a TiO2 NTs/MAPbI3 QDs heterostructure device demonstrates excellent flexibility and high transparency (85%) in the 400–800 nm range, their photodetecting performance is well retained after 200 cycles of repeated bending at 90°. The present strategy that combines facile electrospinning and solution-processed QDs may open a new avenue for wide range response and flexible devices construction.

134 citations

Journal ArticleDOI
TL;DR: In this article, a two-dimensional (2D) array of GaAs/AlGaAs multiple quantum well detectors is achieved by illumination through chemically etched diffraction gratings.
Abstract: Efficient coupling of long‐wavelength infrared (LWIR) radiation to a two‐dimensional (2‐D) array of GaAs/AlGaAs multiple quantum well detectors is achieved by illumination through chemically etched diffraction gratings. Gratings were fabricated on the back surface of the GaAs substrate as well as selectively on the top contact of the detector mesas. Both top and bottom illumination schemes were employed. In all cases, high coupling efficiency (>90%) of the gratings was observed as measured by comparing the responsivity to that of an identical detector illuminated through an angle‐polished facet. The results demonstrate the feasibility of high‐sensitivity GaAs LWIR imagers.

134 citations

Journal ArticleDOI
TL;DR: In this article, the peak responsivity and external quantum efficiency of the GaN nanowire UV photodetector were increased from 773 to 6.39 × 104 A W−1 and from 2.71 × 105% to 2.24 × 107%, respectively.
Abstract: High performance ultraviolet (UV) photodetectors based on semiconducting nanowires are expected to have extensive applications in UV-ray detection, optical communication and environmental monitoring. In this work, GaN nanowire photodetectors have been fabricated and giant UV photoresponse has been achieved with Pt nanoparticle (NP) modification. The peak responsivity and external quantum efficiency (EQE) of the GaN nanowire UV photodetector were increased from 773 to 6.39 × 104 A W−1 and from 2.71 × 105% to 2.24 × 107%, respectively, and the response time and sensitivity were improved greatly after Pt NP decoration on the GaN nanowire surface. Moreover, the Pt–GaN nanowire photodetector still presents its spectrum selectivity in the UV region. Our results reveal that Pt nanoparticles play a key role in enhancing the photodetection performance of the nanodevice due to the strong absorption and scattering of incident light induced by localized surface plasmon resonance (LSPR) and the improvement of interfacial charge separation owing to the special device configuration. These findings offer an efficient avenue toward the performance enhancement of GaN nanowire and related optoelectronic devices or systems.

134 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023848
20221,568
2021795
2020718
2019740
2018653