Responsivity

About: Responsivity is a research topic. Over the lifetime, 9918 publications have been published within this topic receiving 186118 citations.

Graphene-based wearable temperature sensor and infrared photodetector on a flexible polyimide substrate

Abstract: This paper describes an approach to the fabrication of flexible electronics i.e., a wearable temperature sensor and infrared (IR) photodetector on flexible polyimide (PI) substrate. Solar exfoliated reduced graphene oxide (SrGO) and graphene flakes are used as the sensing materials for developing the sensors on a PI substrate. PI, apart from being flexible and compatible with microfabrication processes, also helps in reducing the mobility and recombination of the photo-generated electrons of graphene due of its dielectric nature, thus enabling IR detection. Current responsivity and external quantum efficiency of IR photodetector for graphene flake- and SrGO-based devices were found to be 0.4 A W−1, 16.53% and 0.8 A W−1, 33.06% respectively which are higher than those of commercially available photodetectors. In addition, we demonstrate an ultrasensitive wearable human body temperature sensor in the temperature range of 35 °C to 45 °C, wherein both graphene flake- and SrGO-based devices exhibited a negative temperature coefficient of −41.30 × 10−4 °C−1 and −74.29 × 10−4 °C−1 respectively, which are higher than commercially available counterparts. Plausible underlying mechanisms to both IR sensing and temperature sensing have been studied. Furthermore, as a proof of concept, we investigated the effect of IR radiation emitted by a human hand on the device. Interestingly it was found that the device was very sensitive to it, indicating that the sensor can be used for motion detection which has potential applications in security, surveillance etc. The strategy presented here provides a new, simple, cost effective approach for the fabrication of next-generation wearable and bio-implantable devices based on a polyimide substrate that can be easily integrated onto the surface of a leaf, skin, paper, clothes etc owing to its versatile nature.

A batch-fabricated silicon thermopile infrared detector

Abstract: A thermopile infrared detector fabricated using silicon integrated-circuit technology is described. The device uses a series-connected array of thermocouples whose hot junctions are supported an a thin silicon membrane formed using anisotropic etching and a diffused boron etch stop. The membrane size and thickness control the speed and responsivity of the structure, which can be designed for a given application. For a 2-mm × 2-mm × 1-µm silicon membrane containing sixty bismuth-antimony couples, the structure produces a responsivity of 6 V/W and a time constant of about 15 ms. The use of polysilicon-gold couples can improve the responsivity to nearly 10 V/W while maintaining the same speed, simplifying the process, and retaining compatibility with on-chip signal processing circuitry.

Wavelength selective uncooled infrared sensor by plasmonics

Abstract: A wavelength selective uncooled infrared (IR) sensor using two-dimensional plasmonic crystals (2D PLCs) has been developed. The numerical investigation of 2D PLCs demonstrates that the wavelength of absorption can be mainly controlled by the period of the surface structure. A microelectromechanical systems-based uncooled IR sensor with 2D PLCs as the IR absorber was fabricated through a complementary metal oxide semiconductor and a micromachining technique. The selective enhancement of responsivity was observed at the wavelength that coincided with the period of the 2D-PLC absorber.

High-detectivity InAs nanowire photodetectors with spectral response from ultraviolet to near-infrared

Abstract: InAs is a direct, narrow band gap (0.354 eV) material with ultrahigh electron mobility, and is potentially a good optoelectronic device candidate in the wide UV-visible-near-infrared region. In this work we report the fabrication of InAs nanowire-based photodetectors, which showed a very high photoresponse over a broad spectral range from 300 to 1,100 nm. The responsivity, external quantum efficiency and detectivity of the device were respectively measured to be 4.4 × 103 AW−1, 1.03 × 106%, and 2.6 × 1011 Jones to visible incident light. Time dependent measurements at different wavelengths and under different light intensities also demonstrated the fast, reversible, and stable photoresponse of our device. Theoretical calculations of the optical absorption and the electric field component distribution were also performed to elucidate the mechanism of the enhanced photoresponse. Our results demonstrate that the single-crystalline InAs NWs are very promising candidates for the design of high sensitivity and high stability nanoscale photodetectors with a broad band photoresponse. Open image in new window