Responsivity

About: Responsivity is a research topic. Over the lifetime, 9918 publications have been published within this topic receiving 186118 citations.

Flexible and High-Performance All-2D Photodetector for Wearable Devices.

Abstract: Emerging novel applications at the forefront of innovation horizon raise new requirements including good flexibility and unprecedented properties for the photoelectronic industry. On account of diversity in transport and photoelectric properties, 2D layered materials have proven as competent building blocks toward next-generation photodetectors. Herein, an all-2D Bi2 Te3 -SnS-Bi2 Te3 photodetector is fabricated with pulsed-laser deposition. It is sensitive to broadband wavelength from ultraviolet (370 nm) to near-infrared (808 nm). In addition, it exhibits great durability to bend, with intact photoresponse after 100 bend cycles. Upon 370 nm illumination, it achieves a high responsivity of 115 A W-1 , a large external quantum efficiency of 3.9 × 104 %, and a superior detectivity of 4.1 × 1011 Jones. They are among the best figures-of-merit of state-of-the-art 2D photodetectors. The synergistic effect of SnS's strong light-matter interaction, efficient carrier separation of Bi2 Te3 -SnS interface, expedite carrier injection across Bi2 Te3 -SnS interface, and excellent carrier collection of Bi2 Te3 topological insulator electrodes accounts for the superior photodetection properties. In summary, this work depicts a facile all-in-one fabrication strategy toward a Bi2 Te3 -SnS-Bi2 Te3 photodetector. More importantly, it reveals a novel all-2D concept for construction of flexible, broadband, and high-performance photoelectronic devices by integrating 2D layered metallic electrodes and 2D layered semiconducting channels.

Three-Dimensional Integration of Black Phosphorus Photodetector with Silicon Photonics and Nanoplasmonics

Abstract: We demonstrate the integration of a black phosphorus photodetector in a hybrid, three-dimensional architecture of silicon photonics and metallic nanoplasmonics structures. This integration approach combines the advantages of the low propagation loss of silicon waveguides, high-field confinement of a plasmonic nanogap, and the narrow bandgap of black phosphorus to achieve high responsivity for detection of telecom-band, near-infrared light. Benefiting from an ultrashort channel (∼60 nm) and near-field enhancement enabled by the nanogap structure, the photodetector shows an intrinsic responsivity as high as 10 A/W afforded by internal gain mechanisms, and a 3 dB roll-off frequency of 150 MHz. This device demonstrates a promising approach for on-chip integration of three distinctive photonic systems, which, as a generic platform, may lead to future nanophotonic applications for biosensing, nonlinear optics, and optical signal processing.

A hybrid AlGaInAs-silicon evanescent preamplifier and photodetector

Abstract: We report the integration of a hybrid silicon evanescent waveguide photodetector with a hybrid silicon evanescent optical amplifier. The device operates at 1550 nm with a responsivity of 5.7 A/W and a receiver sensitivity of -17.5 dBm at 2.5 Gb/s. The transition between the passive silicon waveguide and the hybrid waveguide of the amplifier is tapered to increase coupling efficiency and to minimize reflections.

Performance assessment of time-domain optical brain imagers, part 1: basic instrumental performance protocol

Abstract: Performance assessment of instruments devised for clinical applications is of key importance for validation and quality assurance. Two new protocols were developed and applied to facilitate the design and optimization of instruments for time-domain optical brain imaging within the European project nEUROPt. Here, we present the "Basic Instrumental Performance" protocol for direct measurement of relevant characteristics. Two tests are discussed in detail. First, the responsivity of the detection system is a measure of the overall efficiency to detect light emerging from tissue. For the related test, dedicated solid slab phantoms were devel- oped and quantitatively spectrally characterized to provide sources of known radiance with nearly Lambertian angular characteristics. The responsivity of four time-domain optical brain imagers was found to be of the order of 0.1 m 2 sr. The relevance of the responsivity measure is demonstrated by simulations of diffuse reflectance as a function of source-detector separation and optical properties. Second, the temporal instrument response func- tion (IRF) is a critically important factor in determining the performance of time-domain systems. Measurements of the IRF for various instruments were combined with simulations to illustrate the impact of the width and shape of the IRF on contrast for a deep absorption change mimicking brain activation. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original

Near-ultraviolet photodetector based on hybrid polymer/zinc oxide nanorods by low-temperature solution processes

Abstract: In this article, we have proposed a nanostructured near-ultraviolet photodetector (<400nm) based on the ZnO nanorod/polyfluorene hybrid by solution processes at low temperature. The current-voltage characteristic of the hybrid device demonstrates the typical pn-heterojunction diode behavior, consisting of p-type polymer and n-type ZnO nanorods, respectively. The relative quantum efficiencies of the hybrid device exhibit a nearly three order difference while illuminated under UV and visible light, respectively. The responsivity for the device can reach to 0.18A∕W at 300nm by applying a bias of −2V, which provides a route to fabricate a low-cost near-UV photodetector.