Topic
Responsivity
About: Responsivity is a research topic. Over the lifetime, 9918 publications have been published within this topic receiving 186118 citations.
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TL;DR: The generation of free carriers in unimplanted SOI ridge waveguides is reported on, which is attributed to surface state absorption, and a photodetector with a responsivity of 36 mA/W and quantum efficiency of 2.8% is demonstrated.
Abstract: Silicon is an extremely attractive material platform for integrated optics at telecommunications wavelengths, particularly for integration with CMOS circuits. Developing detectors and electrically pumped lasers at telecom wavelengths are the two main technological hurdles before silicon can become a comprehensive platform for integrated optics. We report on the generation of free carriers in unimplanted SOI ridge waveguides, which we attribute to surface state absorption. By electrically contacting the waveguides, a photodetector with a responsivity of 36 mA/W and quantum efficiency of 2.8% is demonstrated. The photoconductive effect is shown to have minimal falloff at speeds of up to 60 Mhz.
111 citations
TL;DR: It is demonstrated that the band alignment of the layered heterostructures can be manipulated by lattice engineering of 2D nanosheets to enhance optoelectronic performance.
Abstract: Layered van der Waals heterostructures have attracted considerable attention recently, due to their unique properties both inherited from individual two-dimensional (2D) components and imparted from their interactions. Here, a novel few-layer MoS2 /glassy-graphene heterostructure, synthesized by a layer-by-layer transfer technique, and its application as transparent photodetectors are reported for the first time. Instead of a traditional Schottky junction, coherent ohmic contact is formed at the interface between the MoS2 and the glassy-graphene nanosheets. The device exhibits pronounced wavelength selectivity as illuminated by monochromatic lights. A responsivity of 12.3 mA W-1 and detectivity of 1.8 × 1010 Jones are obtained from the photodetector under 532 nm light illumination. Density functional theory calculations reveal the impact of specific carbon atomic arrangement in the glassy-graphene on the electronic band structure. It is demonstrated that the band alignment of the layered heterostructures can be manipulated by lattice engineering of 2D nanosheets to enhance optoelectronic performance.
111 citations
TL;DR: HgTe colloidal quantum dots in an inorganic As(2)S(3) matrix allow 100-fold higher mobility with optimized transport properties compared to HgTe-organic CQD film while remaining intrinsic.
Abstract: HgTe colloidal quantum dots (CQD) in an inorganic As(2)S(3) matrix allow 100-fold higher mobility with optimized transport properties compared to HgTe-organic CQD film while remaining intrinsic. The material's electronic properties are measured by field effect transistors as a function of temperature and the responsivity and detectivity of the mid-IR photoconductors are discussed.
111 citations
TL;DR: In this paper, a metal-semiconductor-metal structured ultraviolet (UV) photodetector has been fabricated from zinc oxide films, which can reach 26'000 A/W at 8 V bias.
Abstract: Metal-semiconductor-metal structured ultraviolet (UV) photodetector has been fabricated from zinc oxide films. The responsivity of the photodetector can reach 26 000 A/W at 8 V bias, which is the highest value ever reported for a semiconductor ultraviolet photodetector. The origin of the high responsivity has been attributed to the carrier-trapping process occurred in the metal-semiconductor interface, which has been confirmed by the asymmetric barrier height at the two sides of the metal-semiconductor interdigital electrodes. The results reported in this paper provide a way to high responsivity UV photodetectors, which thus may address a step toward future applications of UV photodetectors.
111 citations
TL;DR: In this article, an Inorganic-organic photodiode was fabricated with blend single layer as well as sandwich structure, using p-Si and poly(2-methoxy-5-(20-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV):fullerene-C60 blend.
Abstract: Inorganic–organic photodiode was fabricated with blend single layer as well as sandwich structure, using p-Si and poly(2-methoxy-5-(20-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV):fullerene-C60 blend. Electronic parameters such as barrier height, diode ideality factor, series resistance and shunt resistance were determined from the I–V characteristic in the dark of p-Si/C60:MEH-PPV diode and were found to be 0.75 eV, 1.36, 6.26 × 105 Ω, 1.40 × 1010 Ω, respectively. The interface state density and time constant of p-Si/C60:MEH-PPV diode were determined to be 2.55 × 1011 eV−1 cm−2 and 1.81 × 10−6 s, respectively. The photoconductivity sensitivity and responsivity values of the diode were found to be 8.16 × 10−6 S m/W and 1.63 × 10−2 A/W, respectively. The p-Si/C60:MEH-PPV diode indicates a photovoltaic behaviour with a maximum open circuit voltage Voc of 130 mV and short-circuit current Isc of 24.5 nA. The photocurrent of the device was found to be 2.94 μA and photoconductivity mechanism of the p-Si/C60:MEH-PPV diode indicates the existence of continuous distribution of trap centres. It is evaluated that the p-Si/C60:MEH-PPV photovoltaic device can be operated as a heterojunction photodiode.
111 citations