Responsivity

About: Responsivity is a research topic. Over the lifetime, 9918 publications have been published within this topic receiving 186118 citations.

Performance enhancement of ZnO UV photodetectors by surface plasmons.

Abstract: Surface plasmons, a unique property of metal nanoparticles, have been widely applied to enhance the performance of optical and electrical devices. In this study, a high quality zinc oxide (ZnO) thin film was grown on a quartz substrate by a radio frequency magnetron sputtering technique, and a metal–semiconductor–metal structured ultraviolet detector was prepared on the ZnO film. The responsivity of the photodetector was enhanced from 0.836 to 1.306 A/W by sputtering metal (Pt) nanoparticles on the surface of the device. In addition, the absorption of the ZnO thin film was enhanced partly in the ultraviolet band. It is revealed that Pt nanoparticles play a key role in enhancing the performance of the photodetectors, where surface plasma resonance occurs.

Perovskite/Poly(3-hexylthiophene)/Graphene Multiheterojunction Phototransistors with Ultrahigh Gain in Broadband Wavelength Region.

Abstract: Organometal halide perovskite materials have attracted much attention recently for their excellent optoelectronic properties. Here, we report an ultrasensitive phototransistor based on the multiheterojunction of CH3NH3PbI3–xClx perovskite/poly(3-hexylthiophene)/graphene for the first time. Since the photoexcited electrons and holes are effectively separated by the poly(3-hexylthiophene) layer, high-density electrons are trapped in the perovskite layer, leading to a strong photogating effect on the underlying graphene channel. The phototransistor demonstrates an unprecedented ultrahigh responsivity of ∼4.3 × 109 A/W and a gain approaching 1010 electrons per photon, respectively. More importantly, the device is sensitive in a broadband wavelength region from ultraviolet to near-infrared, which has not yet been achieved with other perovskite photodetectors. It is expected that the novel perovskite phototransistor will find promising applications as photodetection and imaging devices in the future.

Sn-Based Perovskite for Highly Sensitive Photodetectors.

Abstract: Organic-inorganic hybrid perovskites have emerged as promising functional materials for high-performance photodetectors. However, the toxicity of Pb and the lack of internal gain mechanism in typical perovskites significantly hinder their practical applications. Herein, a low-voltage and high-performance photodetector based on a single layer of lead-free Sn-based perovskite film is reported. The device shows broadband response from ultraviolet to near-infrared light with a responsivity up to 105 A W-1 and a high gain at a low operating voltage. The outstanding performance is attributed to the high hole mobility, p-doping nature, and excellent optoelectronic properties of the Sn-based perovskite. Moreover, the device is assembled on a flexible substrate and demonstrates both high sensitivity and good bending stability. This work demonstrates a route for realizing nontoxic, low-cost, and high-performance perovskite photodetectors with a simple device structure.

Silicon-based visible and near-infrared optoelectric devices

Abstract: In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.

Ultra-fast germanium photodiode with 3-dB bandwidth of 265 GHz

Abstract: On a scalable silicon technology platform, we demonstrate photodetectors matching or even surpassing state-of-the-art III–V devices. As key components in high-speed optoelectronics, photodetectors with bandwidths greater than 100 GHz have been a topic of intense research for several decades. Solely InP-based detectors could satisfy the highest performance specifications. Devices based on other materials, such as germanium-on-silicon devices, used to lag behind in speed, but enabled complex photonic integrated circuits and co-integration with silicon electronics. Here we demonstrate waveguide-coupled germanium photodiodes with optoelectrical 3-dB bandwidths of 265 GHz and 240 GHz at a photocurrent of 1 mA. This outstanding performance is achieved by a novel device concept in which a germanium fin is sandwiched between complementary in situ-doped silicon layers. Our photodetectors show internal responsivities of 0.3 A W−1 (265 GHz) and 0.45 A W−1 (240 GHz) at a wavelength of 1,550 nm. The internal bandwidth–efficiency product of the latter device is 86 GHz. Low dark currents of 100–200 nA are obtained from these ultra-fast photodetectors. By sandwiching a germanium fin between complementary in situ-doped silicon layers, a waveguide-coupled germanium photodiode with a 3-dB bandwidth of 265 GHz, accompanied by high responsivity and low dark current, is realized.