Topic
Responsivity
About: Responsivity is a research topic. Over the lifetime, 9918 publications have been published within this topic receiving 186118 citations.
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TL;DR: Extensive measurements are presented which show the challenges encountered in obtaining accurate measurements at THz frequencies using a quasi-optical set-up, and the decisions taken to quote the average NEP values.
Abstract: This paper presents a 0.32 THz 4x4 imaging array based on an advanced SiGe technology. Each pixel is composed of a high efficiency on-chip antenna meeting all metal-density rules, which is coupled to a SiGe detector and a low noise CMOS operational amplifier. A quartz superstrate is used on top of the imaging chip to improve the radiation efficiency. The array results in an average NEP of 34 pW/Hz 1/2 at an IF of 10-100 kHz for a detector bias current of 50-150 μA, a responsivity of 18 kV/W and a 3-dB bandwidth of 25 GHz. The power consumption is 2.4 mW/pixel. Extensive measurements are presented which show the challenges encountered in obtaining accurate measurements at THz frequencies using a quasi-optical set-up, and the decisions taken to quote the average NEP values.
101 citations
TL;DR: In this paper, the InAs/InGaAs quantum dots-in-a-well (DWELL) infrared photodetectors are reported, in which the active region consists of InAs quantum dot embedded in an InGaAs well quantum well.
101 citations
TL;DR: In this article, a long-wavelength infrared detector is demonstrated using Si1−xGex/Si multiple quantum wells for the first time, and a broad peak in the photoresponse is observed near 9 μm with a full width at half maximum of about 80 meV which provides the response in the 6-12 μm range.
Abstract: A long‐wavelength infrared detector is demonstrated using Si1−xGex/Si multiple quantum wells for the first time. A broad peak in the photoresponse is observed near 9 μm with a full width at half maximum of about 80 meV which provides the response in the 6–12 μm range. The position of the peak in the photoresponse is in good agreement with that observed in the absorption measurement using a waveguide geometry. A peak responsivity of about 0.3 A/W and detectivity of D*=1×109 cm √Hz/W at 77 K are achieved. This suggests the possibility of monolithic integration of Si1−xGex/Si multiple quantum well detectors with signal processing electronics for potential focal plane array applications.
101 citations
TL;DR: In this paper, the spectral wavelength of GaAs/Al(x)Ga(1-x)As quantum-well infrared photodetectors to significantly longer wavelengths of 11-15 micron was achieved.
Abstract: Success has been achieved in extending the spectral wavelength of GaAs/Al(x)Ga(1-x)As quantum-well infrared photodetectors to significantly longer wavelengths of 11-15 micron. High responsivity of 0.5 A/W, high quantum efficiency of 12 percent, and high detectivity as well as an excellent noise equivalent temperature difference of 4 mK have been achieved at T = 50 K. High performance of 19 mK has also been achieved at an even higher temperature of 60 K.
101 citations
TL;DR: In this article, a radial heterojunction nanowire diode (RND) array consisting of a ZnO (shell)/Si (core) structure was fabricated using conformal coating of a n-type znO layer that surrounded a p-type Si nanowires.
Abstract: A radial heterojunction nanowire diode (RND) array consisting of a ZnO (shell)/Si (core) structure was fabricated using conformal coating of a n-type ZnO layer that surrounded a p-type Si nanowire. In both ultraviolet (UV) and visible ranges, the photoresponsivity of the RND was larger than that of a planar thin film diode (PD) owing to the efficient carrier collection with improved light absorption. Compared to a PD, in the forward bias, a 6 μm long RND resulted in a ∼2.7 times enhancement of the UV responsivity at λ=365 nm, which could be explained based on the oxygen-related hole-trap mechanism. Under a reverse bias, UV-blind visible detection was observed while the UV response was suppressed.
101 citations