Topic
Responsivity
About: Responsivity is a research topic. Over the lifetime, 9918 publications have been published within this topic receiving 186118 citations.
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TL;DR: In this paper, a p-i-n diode embedded silicon microring resonator with Q factor of 8000 was used to demonstrate 20-fold cavity-enhanced photocurrent generation in 1.55μm wavelengths.
Abstract: We demonstrate 20-fold cavity-enhanced photocurrent generation in 1.55 μm wavelengths in a p-i-n diode embedded silicon microring resonator with Q factor of 8000. The on-resonance wavelength shows linear responsivity of 0.12 mA/W upon 0 V bias and 0.25 mA/W upon −15 V bias. We attribute the linear absorption to surface-state absorption at the microring waveguide interfaces. Our experiments indicate that the photocurrent generation is linear to the estimated coupled power up to ∼500 μW.
96 citations
TL;DR: In this article, SiSi2∕p-Si detectors with tapered geometry demonstrate dark current of ∼3.0nA at room temperature, responsivity of ∼4.6mA∕W at wavelengths ranging from 1520to1620nm and 3dB bandwidth of ∼2.0GHz.
Abstract: Integrated silicon-on-insulator waveguide-based silicide Schottky-barrier photodetectors were fabricated using low-cost standard Si complementary metal-oxide-semiconductor processing technology. The thin epitaxial NiSi2 layer formed by solid-state Ti-interlayer mediated epitaxy on the top of Si-waveguide absorbs light propagating through the waveguide effectively and exhibits excellent rectifying property on both p-Si and n-Si. NiSi2∕p-Si detectors with tapered geometry demonstrate dark current of ∼3.0nA at room temperature, responsivity of ∼4.6mA∕W at wavelengths ranging from 1520to1620nm, and 3dB bandwidth of ∼2.0GHz. The approaches for further improvement in responsivity are addressed.
96 citations
TL;DR: In this article, the responses of these long-carrier-lifetime photoconductive detectors were compared to that of the photoconductively antenna fabricated on a low-temperature grown GaAs (LT-GaAs) with a sub-picosecond carrier lifetime.
Abstract: Photoconductive dipole antennas fabricated on semi-insulating (SI) GaAs and SI-InP were used to detect terahertz (THz) pulses. The responses of these long-carrier-lifetime photoconductive detectors were compared to that of the photoconductive antenna fabricated on a low-temperature grown GaAs (LT-GaAs) with a subpicosecond carrier lifetime. The SI-InP-based photoconductive detector showed a higher responsivity and a better signal-to-noise ratio (SNR) than the LT-GaAs-based photoconductive detector at low gating laser powers. The SI-GaAs-based detector, however, showed a responsivity comparable to that of the LT-GaAs photoconductive detector only at very weak gating laser power, and the SNR of the SI-GaAs-based detector was poor for overall gating laser powers due to the high background noise originating from a large amount of stray photocurrent.
96 citations
TL;DR: The analysis of different morphologies of the active semiconducting layer revealed that single PDI fibers exhibit the higher photoresponse when compared to more poorly organized films, representing a step forward toward the use of organic based phototransistors as photosensors.
Abstract: We report on the fabrication of solution-processed organic phototransistors (OPTs) based on perylenebis(dicarboximide)s (PDIs). We found that the responsivity to the photoillumination depends on the transistor’s channel length and that it can be tuned by varying the device geometry. The analysis of different morphologies of the active semiconducting layer revealed that single PDI fibers exhibit the higher photoresponse when compared to more poorly organized films. The highest responsivity value of 4.08 ± 1.65 × 105 A/W was achieved on a multifiber-based OPT. These findings represent a step forward toward the use of organic based phototransistors as photosensors.
95 citations
TL;DR: This work demonstrates the feasibility of integrating conjugated MOFs as an active element into broadband photodetectors, thus bridging the gap between materials' synthesis and technological applications.
Abstract: Metal-organic frameworks (MOFs) are emerging as an appealing class of highly tailorable electrically conducting materials with potential applications in optoelectronics. Yet, the realization of their proof-of-concept devices remains a daunting challenge, attributed to their poor electrical properties. Following recent work on a semiconducting Fe3 (THT)2 (NH4 )3 (THT: 2,3,6,7,10,11-triphenylenehexathiol) 2D MOF with record-high mobility and band-like charge transport, here, an Fe3 (THT)2 (NH4 )3 MOF-based photodetector operating in photoconductive mode capable of detecting a broad wavelength range from UV to NIR (400-1575 nm) is demonstrated. The narrow IR bandgap of the active layer (≈0.45 eV) constrains the performance of the photodetector at room temperature by band-to-band thermal excitation of charge carriers. At 77 K, the device performance is significantly improved; two orders of magnitude higher voltage responsivity, lower noise equivalent power, and higher specific detectivity of 7 × 108 cm Hz1/2 W-1 are achieved under 785 nm excitation. These figures of merit are retained over the analyzed spectral region (400-1575 nm) and are commensurate to those obtained with the first demonstrations of graphene- and black-phosphorus-based photodetectors. This work demonstrates the feasibility of integrating conjugated MOFs as an active element into broadband photodetectors, thus bridging the gap between materials' synthesis and technological applications.
95 citations