Topic
Return loss
About: Return loss is a research topic. Over the lifetime, 11090 publications have been published within this topic receiving 97603 citations.
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01 Nov 2016-Microsystem Technologies-micro-and Nanosystems-information Storage and Processing Systems
TL;DR: In this paper, the authors compared the performance of uniform three-meander beam with non-uniform single meander beam RF MEMS switch for operation in the range 5 − 40 GHz.
Abstract: This Paper reports on investigation of High Con Coff ratio Capacitive Shunt RF MEMS Switch and detailed comparison between uniform three meander beam with non-uniform single meander beam RF MEMS switch. RF MEMS Switches are designed for operation in the range 5---40 GHz. Pull in analysis is performed with gold as a beam material. Simulation reveals that use of high K dielectric material can drastically improve the capacitance ratio of switch. For the same geometry, pull in voltage is 2.45 V for HfO2, 2.7 V for Si3N4 and Capacitive Ratio of the switch with Si3N4 is 83.75 and Capacitive Ratio with HfO2 is 223 at 2g0 (air gap) and 0.8 μm thickness of beam. The Radio Frequency performance of RF MEMS switch is obtained by scattering parameters (insertion loss, Return loss and isolation) which are mainly dominated by down to up capacitance ratio and MEMS bridge geometries. RF analysis shows that insertion loss as low as ź0.4 dB at 20 GHz and isolation as high as 80 dB at 20 GHz can be achieved. Investigation of three uniform meander Design and non-uniform single meander design reveals that use of non-uniform design reduces the design complexity and saves substrate area still maintaining almost same device performance. S-parameter analysis is carried out to compare device performance for both structures. DC analysis of the proposed switch is carried out using Coventorware and RF analysis is performed in MATLAB.
29 citations
IBM1
TL;DR: This paper demonstrates the use of a T-Coil (two series connected inductors with a center tap) in a 90 nm process CMOS SerDes Receiver to enable the Chip and Package to meet the Return Loss specification and in addition extend the usable BW.
Abstract: A wide range of serializer deserializer (SerDes) Compliance Specifications exist for the Return Loss seen at the Package interface to the printed circuit board (PCB) for High Speed Links. For the goal of achieving interoperability it is expected that the most stringent Return Loss specification is met. The Return Loss performance is also an indication of available Chip and package bandwidth (BW). This paper demonstrates the use of a T-Coil (two series connected inductors with a center tap) in a 90 nm process CMOS SerDes Receiver to enable the Chip and Package to meet the Return Loss specification and in addition extend the usable BW.
29 citations
TL;DR: In this paper , a 60 GHz third-order on-chip bandpass filter (BPF) based on half-mode substrate integrated waveguide (HMSIW) cavity is synthesized using GaAs pHEMT technology.
Abstract: A 60 GHz third-order on-chip bandpass filter (BPF) based on half-mode substrate integrated waveguide (HMSIW) cavity is synthesized using GaAs pHEMT technology. Two coupling slots are etched to divide the HMSIW cavity into three resonators, and then a third-order Chebyshev BPF is designed with predicted transmission zero, return loss and bandwidth through the synthesis method. The theoretical and extracted external quality factor and coupling coefficients are used to determine the dimensions of the BPF. For demonstration, a BPF sample with a bandwidth of 29.2% is fabricated, and its simulations and measurements are in good agreement.
29 citations
TL;DR: In this paper, a dual-polarized microstrip antenna capable of achieving a wide bandwidth, high isolation, low crosspolarisation levels and low backward radiation levels is presented.
Abstract: A dual-polarised microstrip antenna capable of achieving a wide bandwidth, a high isolation, low cross-polarisation levels and low backward radiation levels is presented The H-shaped coupling aperture is used For wide bandwidth and easy integration with active circuits, it uses the aperture-coupled stacked microstrip square patches Measured return loss exhibits a bandwidth of over 209% and isolation is better than 36 dB over the bandwidth Cross-polarisation levels and the front-to-back ratio are better than –22 and 21 dB, respectively
29 citations
TL;DR: In this paper, a coplanar waveguide-fed printed monopole antenna with an n-shaped slot for dual-band operations is proposed, and the measured results indicate that the impedance bandwidths of the proposed antenna, defined by 10-dB return loss, are 13.6% (1.85 −2.12 GHz) and 5.7% (2.39 −1.53 GHz), covering the required bandwidths for PCS (1850.5 −1989.5 MHz), CDMA2000 (18 50 −1990 MHz), TD-SC
Abstract: A novel coplanar waveguide (CPW)-fed printed monopole antenna with an n-shaped slot for dual-band operations is proposed. By etching an n-shaped slot on the radiating element, two tunable operating bands can be obtained. The measured results indicate that the impedance bandwidths of the proposed antenna, defined by 10-dB return loss, are 13.6% (1.85–2.12 GHz) and 5.7% (2.39–2.53 GHz), covering the required bandwidths for PCS (1850.5–1989.5 MHz), CDMA2000 (1850–1990 MHz), TD-SCDMA (1880–2025 MHz), and 2.4 GHz WLAN (2400–2484 MHz). In addition, good omnidirectional radiation characteristics have been obtained over the entire frequency range of interest. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:240–242, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26475
29 citations