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Reverse leakage current

About: Reverse leakage current is a research topic. Over the lifetime, 1386 publications have been published within this topic receiving 17875 citations.


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TL;DR: In this paper, an ideal model for junction grading during fabrication was developed for n-n heterojunction rectification and an abruptness requirement for rectification to exist was developed on the basis of this ideal model.
Abstract: Junctions between n -type semiconductors of different electron affinity show rectification if the junction is sufficiently abrupt. Such structures are potentially very fast, because only majority-carrier transport is involved. InPGaAs n-n junctions were fabricated with an epitaxial vapor-growth method. Typical V-I characteristics display a forward-voltage drop of 0·3 V at 10 A cm 2 , and a reverse leakage current of 0·5 A cm 2 at −2 V. No storage was observable in switching measurements on these devices. Other observations demonstrate that these junctions are indeed n-n heterojunction rectifiers. Ideal semiconductor-semiconductor contacts are reviewed and the concepts extended to graded contacts. An abruptness requirement for rectification to exist is developed on the basis of this ideal model for the effects of junction grading during fabrication. If D is the diffusion constant of the fastest moving lattice atom at the growth temperature, t the growth time, δ χ the total electron affinity change through the junction, and L D the Debye length on the low-electron affinity side, then for appreciable rectification to exist a condition which must be satisfied is Dt D 2 δ χ 10 kT .

466 citations

Journal ArticleDOI
TL;DR: In this paper, the fabrication of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates is described.
Abstract: We report on the fabrication of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates. Hydride vapor phase epitaxy was used to grow p-type AlGaN, while chemical vapor deposition was used to produce the n-type ZnO layers. Diode-like, rectifying I-V characteristics, with threshold voltage ~3.2V and low reverse leakage current ~10(-7)A, are observed at room temperature. Intense ultraviolet emission with a peak wavelength near 389 mn is observed when the diode is forward biased; this emission is found to be stable at temperatures up to 500K and shown to originate from recombination within the ZnO.

445 citations

Journal ArticleDOI
TL;DR: The external quantum efficiency and photoresponsivity profiles of the device showed a broad spectral response from the visible to the infrared region, indicating potential applications as a broad band photovoltaic cell or a visible-infrared dual-band photodetector.
Abstract: Catalyst-free, direct heteroepitaxial growth of vertical InAs nanowires on Si(111) substrates was accomplished over a large area by metal-organic chemical vapor deposition Nanowires showed very uniform diameters and a zinc blende crystal structure The heterojunctions formed at the interface between the n-type InAs nanowires and the p-type Si substrate were exploited to fabricate vertical array photodiode devices which showed an excellent rectification ratio and low reverse leakage current Temperature-dependent current transport across the heterojunctions was studied theoretically and experimentally in the dark and under AM 15 illumination When operated in photovoltaic mode, the open-circuit voltage was found to increase linearly with decreasing temperature while the energy conversion efficiency changed nonmonotonically with a maximum of 25% at 110 K Modeling of the nanowire/substrate heterojunctions showed good agreement with the experimental observations, and allowed determining the conduction band offset between the InAs nanowires and Si to be 010-015 eV The external quantum efficiency and photoresponsivity profiles of the device showed a broad spectral response from the visible to the infrared region, indicating potential applications as a broad band photovoltaic cell or a visible-infrared dual-band photodetector

298 citations

Journal ArticleDOI
TL;DR: In this paper, the reverse leakage current is observed to depend on device area, Schottky barrier height, electric field at the metal-semiconductor interface, and temperature (a decreasing temperature dependence with increasing reverse bias).
Abstract: Practical design of high-voltage SiC Schottky rectifiers requires an understanding of the device physics that affect the key performance parameters. Forward characteristics of SiC Schottky rectifiers follow thermionic emission theory and are relatively well understood. However, the reverse characteristics are not well understood and have not been experimentally investigated in-depth. In this paper we report the analysis and experimental results of both the forward and reverse characteristics of high-voltage SiC Schottky rectifiers. Ti and Ni Schottky rectifiers with boron implant edge termination were fabricated on n-type 4H SiC samples. Ni Schottky rectifiers fabricated on a 13-/spl mu/m thick 3.5/spl times/10/sup 15/ cm/sup -3/ epilayer have a current density of 100 A/cm/sup 2/ at approximately 2 V forward bias and a reverse leakage current density of less than 0.1 A/cm/sup 2/ at a reverse bias of 1720 V. The reverse leakage current is observed to depend on device area, Schottky barrier height, electric field at the metal-semiconductor interface, and temperature (a decreasing temperature dependence with increasing reverse bias). In addition. the reverse leakage current magnitude is larger and the electric field dependence is stronger than predicted by thermionic emission and image-force barrier height lowering. This suggests the reverse leakage current is due to a combination of thermionic field emission and field emission.

219 citations

Journal ArticleDOI
TL;DR: In this article, the effect of postannealing on the electrical and optical properties of β-Ga2O3 photodiodes with a Au Schottky contact on a single crystal substrate was investigated.
Abstract: We fabricated β-Ga2O3 photodiodes with a Au Schottky contact on a single crystal substrate and investigated the effect of postannealing on the electrical and optical properties of the photodiodes. The ideality factor improved to near unity by annealing at temperatures above 200 °C; however, the reverse leakage current remained nearly unchanged. The responsivity in the wavelength region below 260 nm was enhanced dramatically by a factor of more than 102 after annealing at 400 °C resulting in maximum responsivity of 103 A/W, accompanied with a contrast ratio of about six orders of magnitude between the responsivities at 240 and 350 nm.

204 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202316
202241
202142
202055
201956
201854