RF power amplifier
About: RF power amplifier is a(n) research topic. Over the lifetime, 21191 publication(s) have been published within this topic receiving 294253 citation(s).
Papers published on a yearly basis
TL;DR: This expanded and thoroughly revised edition of Thomas H. Lee's acclaimed guide to the design of gigahertz RF integrated circuits features a completely new chapter on the principles of wireless systems.
Abstract: 53 ■ IEEE CIRCUITS & DEVICES MAGAZINE ■ NOVEMBER/DECEMBER 2005 THE DESIGN OF CMOS RADIOFREQUENCY INTEGRATED CIRCUITS, 2ND ED By Thomas Lee, Cambridge University Press, 2003. All-CMOS radio transceivers and system-on-a-chip are rapidly making inroads into a wireless market that, for years, was dominated by bipolar solutions. On wireless LAN and Bluethooth, RF CMOS is especially dominant, and it is becoming also in GSM cellular and GPS receivers. Hence, books that cover this widespread domain respond to a real need. The first edition of this book, published on 1998, was a pioneering textbook on the field of RF CMOS design. This second edition is a very interesting and upgraded version that includes new material and revised topics. In particular, it now includes a chapter on the fundamentals of wireless systems. The chapter on IC components is greatly expanded and now follows that on passive RLC components. The chapter on MOS devices has been updated since it includes the understanding of the model for the shorth-channel MOS and considers and discusses the scaling trends and its impact on the next several years. It has also expanded the topic of power amplifiers; indeed, it now also covers techniques for linearization and efficiency enhancement. Low-noise amplifiers, oscillators, and phase noise are now expanded and treated with more detail. Moreover, the chapter on transceiver architectures now includes much more detail, especially on direct-conversion architecture. Finally, additional commentary on practical details on simulations, floorplanning, and packaging has been added. The first edition of this book widely covered all the main arguments needed in the CMOS design context and provided a bridge between system and circuit issues. This second edition, which is upgraded and improved, is really useful, both in the industry and academia, for the new generation of RF engineers. Indeed, it is suited for students taking courses on RF design and is a valuable reference for practicing engineers. Of course, the arguments treated in the textbook lead up to low-frequency analog design IC topics. Hence, readers have to be intimately familiar with that subject. The book is divided into 20 chapters: 1) A Nonlinear History of Radio 2) Overview of Wireless Principles 3) Passive RLC Networks 4) Characteristics of Passive IC Components 5) A Review of MOS Device Physics; 6) Distributed Systems 7) The Smith Chart and S-Parameters 8) Bandwidth Estimation Techniques 9) High-Frequency Amplifier Design 10) Voltage References and Biasing 11) Noise 12) LNA Design 13) Mixers 14) Feedback Amplifiers 15) RF Power Amplifiers 16) Phase Locked Loop 17) Oscillators and Synthesizers 18) Phase Noise 19) Architectures 20) RF Circuits Through the Ages. Moreover, it contains over 100 circuit diagrams and many homework problems. Gaetano Palumbo
31 Mar 1999
Abstract: Linear PA Design. Conventional High-Efficiency Amplifier Modes. Class AB PAs at GHz Frequencies. Practical Design of Class AB PAs. Overdrive and the Class F Mode. Switching Mode Amplifiers for RF Applications. Switching PA Modes at GHz Frequencies. Signals, Modulation Systems, and PA Nonlinearities. Efficiency Enhancement Techniques. Power Amplifier Bias Circuit Design. Power Amplifier Architecture. PA Linearization Techniques.
Abstract: The new class of amplifiers described is based on a load network synthesized to have a transient response which maximizes power efficiency even if the active device switching times are substantial fractions of the a.c. cycle. The new class of amplifiers, named `Class E,' is defined and is illustrated by a detailed description and a set of design equations for one simple member of the class. For that circuit the authors measured 96 percent transistor efficiency at 3.9 MHz at 26-W output from a pair of Motorola 2N3735 TO-5 transistors. Advantages of Class E are unusually high efficiency, a priori designability, large reduction in second-breakdown stress, low sensitivity to active-device characteristics, and potential for high-efficiency operation at higher frequencies than previously published Class-D circuits.
Abstract: The generation of RF/microwave power is required not only in wireless communications, but also in applications such as jamming, imaging, RF heating, and miniature dc/dc converters. Each application has its own unique requirements for frequency, bandwidth, load, power, efficiency, linearity, and cost. RF power is generated by a wide variety of techniques, implementations, and active devices. Power amplifiers are incorporated into transmitters in a similarly wide variety of architectures, including linear, Kalm, envelope tracking, outphasing, and Doherty. Linearity can be improved through techniques such as feedback, feedforward, and predistortion.
••16 Jan 2008
TL;DR: The latest developments of the GaN HEMT technologies, including material growth, processing technologies, device epitaxial structures and MMIC designs, are reviewed to achieve the state-of-the-art microwave and millimeter-wave performance.
Abstract: The rapid development of the RF power electronics requires the introduction of wide bandgap material due to its potential in high output power density, high operation voltage and high input impedance GaN-based RF power devices have made substantial progresses in the last decade This paper attempts to review the latest developments of the GaN HEMT technologies, including material growth, processing technologies, device epitaxial structures and MMIC designs, to achieve the state-of-the-art microwave and millimeter-wave performance The reliability and manufacturing challenges are also discussed
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