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Rise time

About: Rise time is a research topic. Over the lifetime, 4748 publications have been published within this topic receiving 47512 citations.


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Journal ArticleDOI
TL;DR: An input headstage for single electrode voltage and current clamping is described which permits selecting desired operational modes during an experiment, including cell attached or whole cell patch clamping, single micro-electrode voltage or current clamped, potential recording, iontophoresis and voltammetry.

23 citations

Proceedings ArticleDOI
02 Jun 2002
TL;DR: In this paper, the position of a parallel-plate electrostatic microactuator beyond its open-loop instability point is servoed by a pre-filter added in front of the feedback loop to shape the input command.
Abstract: In this paper, we present a controller design for servoing the position of a parallel-plate electrostatic microactuator beyond its open-loop instability point. Controller design considers nonlinearities from both the parallel-plate actuator and the parallel-plate position sensor, to ensure robust stability within the feedback loop. Desired transient response is achieved by a pre-filter added in front of the feedback loop to shape the input command. The microactuator is characterized by static and dynamic measurements, with a spring constant of 0.17 N/m, mechanical resonant frequency of 12.4 kHz, and effective damping ratio from 0.55 to 0.35 for gaps between 2.3 to 2.65 µm. The minimum input-referred noise capacitance change is measured at a gap of 5.5 µm, corresponding to a minimum input-referred noise displacement of 0.2 nm/√Hz. Results of the servo test show excellent agreement with design specifications (Rise time < 2 ms, overshoot = 0, and settling time < 5 ms) for the intended application as a magnetic probe tip actuator for data storage. Actuator displacement servoed as far as 55% of the gap is measured, which surpasses the static pull-in limit of one-third of the gap.

23 citations

Journal ArticleDOI
TL;DR: In this article, a flip-chip assembly is used to directly attach a die-form power MOSFET and driver on a PCB, and the parasitic inductances are significantly reduced by eliminating bond wires and minimizing lead length.
Abstract: The ultra-fast switching of power MOSFETs, in about 1 ns, is very challenging. This is largely due to the parasitic inductance that is intrinsic to commercial packages used for both MOSFETs and drivers. Parasitic gate and source inductance not only limit the voltage rise time on the MOSFET internal gate structure but can also cause the gate voltage to oscillate. This paper describes a hybrid approach that substantially reduces the parasitic inductance between the driver and MOSFET gate, as well as between the MOSFET source and its external connection. A flip-chip assembly is used to directly attach a die-form power MOSFET and driver on a PCB. The parasitic inductances are significantly reduced by eliminating bond wires and minimizing lead length. The experimental results demonstrate ultra-fast switching of the power MOSFET with excellent control of the gate-source voltage.

23 citations

Journal ArticleDOI
TL;DR: In this paper, the authors present a simple and effective analytical model to predict and calculate the energy distribution of the incident ions, which is determined by the ratio of the total pulse duration to the sample voltage rise time independent of the plasma composition, ion species, and implantation voltage.
Abstract: Plasma immersion ion implantation is an effective surface modification technique. Unlike conventional beam-line ion implantation, it features ion acceleration/implantation through a plasma sheath in a pulsed mode and non-line-of-sight operation. Consequently, the shape of the sample voltage pulse, especially the finite rise time due to capacitance effects of the hardware, has a large influence on the energy spectra of the incident ions. In this article, we present a simple and effective analytical model to predict and calculate the energy distribution of the incident ions. The validity of the model is corroborated experimentally. Our results indicate that the ion energy distribution is determined by the ratio of the total pulse duration to the sample voltage rise time but independent of the plasma composition, ion species, and implantation voltage, subsequently leading to the simple analytical expressions. The ion energy spectrum has basically two superimposed components, a high-energy one for the majorit...

23 citations

Journal ArticleDOI
TL;DR: In this article, the effect of voltage rise time on nanosecond and sub-nanosecond impulse breakdown of distilled water is studied and the dependence of anode initiated streamer inception on this parameter is shown to be more intricate than previously reported, particularly as it relates to mechanisms directly in the liquid phase.
Abstract: The effect of the voltage rise time on nanosecond and sub-nanosecond impulse breakdown of distilled water is studied. The dependence of anode initiated streamer inception on this parameter is shown to be more intricate than previously reported, particularly as it relates to mechanisms directly in the liquid phase. Dynamics of the emission phase for sub-nanosecond pulses with 600 ps rise time are presented to enable comparison with previous work on nanosecond initiation features. Schlieren imaging is also used to show the development of optical density perturbations and rarefactions as a result of electrostriction in the liquid which were previously found for nanosecond pulses as well. The mechanism of nanopore generation in the liquid due to fast impulses proposed by Shneider, Pekker and Fridman is used to explain the results.

23 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202330
202264
2021111
2020146
2019157
2018147