Rise time

About: Rise time is a research topic. Over the lifetime, 4748 publications have been published within this topic receiving 47512 citations.

Development and validation of a tokamak skin effect transformer model

Abstract: A lumped parameter, state space model for a tokamak transformer including the slow flux penetration in the plasma (skin effect transformer model) is presented. The model does not require detailed or explicit information about plasma profiles or geometry. Instead, this information is lumped in system variables, parameters and inputs. The model has an exact mathematical structure built from energy and flux conservation theorems, predicting the evolution and non-linear interaction of plasma current and internal inductance as functions of the primary coil currents, plasma resistance, non-inductive current drive and the loop voltage at a specific location inside the plasma (equilibrium loop voltage). Loop voltage profile in the plasma is substituted by a three-point discretization, and ordinary differential equations are used to predict the equilibrium loop voltage as a function of the boundary and resistive loop voltages. This provides a model for equilibrium loop voltage evolution, which is reminiscent of the skin effect. The order and parameters of this differential equation are determined empirically using system identification techniques. Fast plasma current modulation experiments with random binary signals have been conducted in the TCV tokamak to generate the required data for the analysis. Plasma current was modulated under ohmic conditions between 200 and 300 kA with 30 ms rise time, several times faster than its time constant L/R approximate to 200 ms. A second-order linear differential equation for equilibrium loop voltage is sufficient to describe the plasma current and internal inductance modulation with 70% and 38% fit parameters, respectively. The model explains the most salient features of the plasma current transients, such as the inverse correlation between plasma current ramp rates and internal inductance changes, without requiring detailed or explicit information about resistivity profiles. This proves that a lumped parameter modelling approach can be used to predict the time evolution of bulk plasma properties such as plasma inductance or current with reasonable accuracy; at least under ohmic conditions without external heating and current drive sources.

A fast and low noise charge sensitive preamplifier in 90 nm CMOS technology

Abstract: A fast charge sensitive preamplifier was designed and built in a 90 nm CMOS technology. The work is part of the R&D effort towards the read out of pixel or small strip sensors in next generation HEP experiments. The preamplifier features outstanding noise performance given its wide bandwidth, with a ENC (equivalent noise charge) of about 350 electrons RMS with a detector of 1 pF capacitance. With proper filtering, the ENC drops to less than 200 electrons RMS. Power consumption is 5 mW for one channel, and the closed loop bandwith is about 180 MHz, for a risetime down to 2 ns in the fastest operation mode. Thanks to some freedom left to the user in setting the open loop gain, detectors with larger source capacitance can be read out without significant loss in bandwidth, being the rise time still 5.5 ns for a 5.6 pF detector. The output can drive a 50 ? terminated transmission line.

Transient response of a bilayer organic light emitting diode: Building-up of external and recombination currents

Abstract: Using a theoretical model of a bilayer organic light emitting diode, we calculate numerically the evolution of carrier densities and electric fields inside the device. The obtained results allow us to detail injection and accumulation of carriers during transient excitation. Charge densities as a function of applied voltage present two distinct thresholds which determine three operating ranges: no injection, unipolar injection, and bipolar injection. Dynamically these thresholds depend on the rise time of the applied voltage and have a clear signature in the current densities. We show that the electroluminescence threshold has static and dynamic values which may be different. Calculated external current in response to a voltage ramp presents two steps related to the evolution of the capacity of the device. This capacitive behavior is observed experimentally.

An integrated 10A, 2.2ns rise-time laser-diode driver for LIDAR applications

Abstract: An integrated laser-diode driver for LIDAR applications in a 0.35 µm 80V CMOS technology is realized. The integration of the power switch as a n-DMOS allows a peak current of 10 A, with a corresponding rise-time of 2.2 ns and a fall-time of 2.4 ns. Up to the authors knowledge this is a first-time achievement on a monolithic die. The laser can be operated at a maximum duty-cycle of 0.1 %, with a pulse duration of 10 – 50 ns. To overcome the parasitic inductances and their associated voltage drop, a high voltage of 70 V is applied to the LIDAR circuit. In order to drive the power switch within its safe operating area and to make sure the rise- and fall-time is minimized, a pre-driver is integrated on the same die.

HgCdTe APD- focal plane array development at CEA Leti-Minatec

Abstract: We report the latest developments of MW HgCdTe electron initiated avalanche photo-diodes (e-APDs) focal plane arrays (FPAs) at CEA-LETI. The MW e-APD FPAs are developed in view of ultra-sensitive high dynamic range passive starring arrays, active 2D/3D and dual-mode passive-active imaging, which is why both the passive imaging performance and the gain characteristics of the APDs are of interest. A passive mode responsivity operability of 99.9% was measured in LPE and MBE e-APDs FPAs associated with an average NETD=12mK, demonstrating that dual mode passive-active imaging can be achieved with LETI e-APDs without degradation in the passive imaging performance. The gain and sensitivity performances were measured in test arrays and using a low voltage technology (3.3V) CTIA test pixel designed for 3D active imaging. The CTIA and test arrays measurements yielded comparable results in terms of bias gain dependence (M=100 at Vb=-7V), low excess noise factor ( =1.2) and low equivalent input current (Ieq_in 100, associated with an operability of 99%. The operability at Ieq_in<1pA at M=30 was 95%. A record low value of Ieq_in=1fA was estimated in the MBE e-APDs at M=100, indicating the potential for using the MW e-APDs for very low flux applications. The high potential of the MW e-APDS for active imaging was demonstrated by impulse response measurements which yielded a typical rise time lower than 100ps and diffusion limited fall time of 900ps to 5ns, depending on the pixel pitch. This potential was confirmed by the demonstration of a 2ns time of flight (TOF) resolution in the CTIA e-APD 3D pixel. The combined photon and dark current induced equivalent back ground noise at f/8 with a cold band pass filter at λ=1.55µm was 2 electrons rms for an integration time of 50ns.