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Rise time

About: Rise time is a research topic. Over the lifetime, 4748 publications have been published within this topic receiving 47512 citations.


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Book ChapterDOI
01 Jan 2010
TL;DR: The GIMLI as mentioned in this paper is a compact, general-purpose, high-power ultra wideband (UWB) source for dual use, homeland security and military applications, which is powered by a compact 12-stage Marx generator with a rise time lower than 25 ns and an operating voltage up to 360 kV.
Abstract: This chapter presents the design and performances of a compact, general-purpose, high-power ultra-wideband (UWB) source named GIMLI. The system was designed for dual use, homeland security and military applications. It is powered by a compact, coaxial 12-stage Marx generator with a rise time lower than 25 ns and an operating voltage up to 360 kV. A fast monocycle pulse is sharpened using a pulse former (MPF). The shaper stage comprises a switching module including a peaking and a grounding multi-channel spark gap under a N2 pressure of 6 MPa. The module is followed by a monopulse-to-monocycle converter based on a coaxial Blumlein pulse forming line. The bipolar signal measured at the output of the MPF has a duration shorter than 2 ns with a rise time of 250 ps. The peak-to-peak output voltage is 250 kV on a 50 Ω resistive load. Repetitive operation of the MPF has been experienced with a 200 Hz Tesla transformer developed by the CEA (Commissariat a l’Energie Atomique). Electromagnetic energy is focused by a dedicated antenna. The designed antenna is a TEM half-horn with two ridges which improve the low-frequency focusing. High-power radiation tests show that the field measured at a distance of 9 m from the TEM Horn-antenna is higher than 120 kV/m.

15 citations

Journal ArticleDOI
TL;DR: In this article, different startup modes of a reversed-field pinch (RFP) are examined and compared and an analytic expression is given for characterizing the V⋅s contributions of the toroidal loop voltage during the current rise in ramped discharges is found.
Abstract: The different startup modes of a reversed-field pinch (RFP) are examined and compared The RFP startup is not the same as startup of other toroidal devices such as the tokamak because of the spatial and temporal variations of the toroidal field and the reversed toroidal field in the outer region of the pinch near the wall In matched mode startup, used in many RFP experiments today, the toroidal flux is held constant during the current rise, with the field reversal occurring before the peak current This mode, with its short rise time, has a low volt-second (V⋅s) input but requires a high toroidal voltage to reach a specific current in a relatively short time In a ramped current mode, alow current RFP discharge is ramped to its final peak value The toroidal flux needed as the current rises is generated by a dynamo action This slower startup mode can be driven by a lower voltage but requires more V⋅s input than the matched mode Different startup modes in the ZT-40M experiment at Los Alamos are compared and an analytic expression is given for characterizing the V⋅s contributions The resistive component of the toroidal loop voltage during the current rise in ramped discharges is found to depend on theta (Θ = Bpol(wall)/Bave)- At a theta of 145, the resistive voltage has a minimum and it has been possible to reduce the V⋅s input by as much as 40% in ramp discharges by keeping theta close to this value

15 citations

Journal ArticleDOI
TL;DR: The experimental results show that the over-voltage diodes are the most reliable elements in view of characteristic modifications that are consequence of aging, however, it was observed that varistors, GFSA and capacitors undergo noticeable changes in characteristics.

15 citations

Journal ArticleDOI
TL;DR: In this paper, an IR microscope capable of measuring the space and time resolved surface temperature distributions in Si power diodes operating under self-heating conditions has been developed, and the experimental results have been compared to results from 2D device simulations including surface recombination and carrier lifetime temperature dependence.
Abstract: In order to optimize and improve the design of power devices with improved surge current safe operating area it is necessary to obtain a good correlation between measured and simulated space and time resolved temperature distributions. Therefore, an IR microscope capable of measuring the space and time resolved surface temperature distributions in Si power diodes operating under self-heating conditions has been developed. The minimum detectable spot size is 15 μm, while the signal rise time is detector limited to about 1 μs. The lower temperature detectivity limit is about 10°C over room temperature. Using this instrument dynamic thermal phenomena in fast recovery 3.3 kV Si power diodes having radiation-induced recombination centers [Proceedings of the 7th EPE, Trondheim, 1997] subjected to 1.2 ms 400–2000 A/cm 2 and 0.3–2 ms 2000 A/cm 2 current pulses have been studied. The experimental results have been compared to results from 2D device simulations including surface recombination and carrier lifetime temperature dependence. The agreement between experimental and device simulation results (i.e. dynamic IV characteristics and time and space resolved temperature distributions) is very good up to a peak current density of 1500 A/cm 2 , and a reasonable good one for peak current densities up to 2000 A/cm 2 (1.2 ms current pulses).

15 citations

Journal ArticleDOI
TL;DR: In this article, the low-frequency dielectric response of generator stator winding insulation materials was calculated from high-voltage time domain spectroscopy measurements, which were used to calculate the theoretical response after the application of a voltage function consisting of a ramped voltage followed by a constant level voltage.
Abstract: The low-frequency dielectric response of generator stator winding insulation materials was calculated from high voltage time domain spectroscopy measurements. These results were used to calculate the theoretical response after the application of a voltage function consisting of a ramped voltage followed by a constant level voltage. The rate of rise of the ramped portion of the voltage function was shown to influence the well known and much used polarization index (PI) and insulation resistance (IR) parameters.

15 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202330
202264
2021111
2020146
2019157
2018147