Rise time

About: Rise time is a research topic. Over the lifetime, 4748 publications have been published within this topic receiving 47512 citations.

Driver circuit for controlling signal rise and fall in field effect transistor circuits

Abstract: An off-chip driver (OCD) circuit is described including a first output device and a second output device having a common output connection wherein a rising (1 bit) or falling (0 bit) signal is applied through an input circuit 24 to the output devices. The output signal which appears at the common output connection will exhibit a rise time and a fall time corresponding to the rise and fall of the input signal. A first monitoring device is connected to the output signal to monitor the rise time of the output signal and a second monitoring device is connected to the output signal to monitor the fall time of the output signal. A ramp generator is provided which generates a reference signal which also includes a rise time and a fall time. The two monitor circuits and compare the rise and fall times of the output signal with the reference rise time and reference fall time to produce a feedback signal to control the rise and fall times of the output signal in accordance with the reference signal.

Monitoring and assessment of control performance for single loop systems

Abstract: The single loop control system with controller of general structure or with PI/PID structure is studied. The control task of the system is to track step set-point changes or reject the intermittent step output disturbances. Performance of a simple feedback system is assessed with its IAE value (J) and its rise time (tr) observed from the response of the system to a step set-point change. Assume that the dynamics of open loop processes can be represented by models of first order or second order plus dead time (i.e., FOPDT or SOPDT). On the basis of these models, the optimal IAEs and the associated rise times are computed. The performance of a system is assessed by comparing its current IAE to the optimal IAEs. An index is thus defined for this quantitative assessment. To be free of a process model for assessment, envelopes of optimal IAE and the rise time are prepared. A method to estimate the step response for set-point tracking by making use of the response of the system to dither inputs is presented. By...

Operation of a 1P28 photomultiplier with subnanosecond response time

Abstract: The parameters governing the time response of an RCA 1P28 photomultiplier are investigated, and special circuitry for optimum time response is described. Photomultiplier performance is extensively evaluated with respect to application in flash photolysis and pulse radiolysis. The output signal rise time achieved is 360 psec for a light impulse and 540 psec for a step function over a linear range extending to an anode current of 8 mA.

An offset compensation technique for latch type sense amplifiers in high-speed low-power SRAMs

Abstract: The input referred offset voltage occurring in the full latch V/sub DD/ biased sense amplifier has been analyzed extensively. The process variations in the matched nMOS and pMOS transistors have been accounted by /spl plusmn/2.5% variation in V/sub T/ and /spl plusmn/5% variation in /spl beta/, from typical values. Effect of various design parameters on the sense amplifier offset has been studied and reported. It has been shown that the rise time of the sense amplifier enable signal (SAEN) has a profound effect on the offset voltage. The slower transition of SAEN signal is proposed to result in high speed as well as low-power consumption in SRAM application. An analytical model has been derived for simplified latch to model the effect of rise time of SAEN signal on offset voltage.

Very high-speed metal-semiconductor-metal ultraviolet photodetectors fabricated on GaN

Abstract: We report on the temporal and the frequency response of metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN. The best devices show a fast 10%–90% rise time of ∼23 ps implying a bandwidth of >15 GHz. These time domain data have been corroborated by direct measurement of the power spectral content. From this a cutoff frequency, f3 dB, of ∼16 GHz has been obtained. Analysis in terms of reverse bias and geometric scaling indicates that the photodetectors are transit-time limited. Modeling of the temporal behavior indicates that a slow component in the time and frequency response data is a consequence of the hole drift velocity.