Topic
Rise time
About: Rise time is a research topic. Over the lifetime, 4748 publications have been published within this topic receiving 47512 citations.
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TL;DR: In this paper, the behavior of laser ultrasound sources in isotropic metals using ultra-short laser pulses in the thermoelastic regime was investigated, and numerical results showed that the thermal response rates of both steel and aluminum are much faster than their mechanical response rates.
29 citations
Patent•
29 Jun 2004TL;DR: In this article, a system and method for processing signals determines rise and fall times of a driving signal, compares the rises and falls to desired values, and independently controls the rise and falling times to equal the desired values.
Abstract: A system and method for processing signals determines rise and fall times of a driving signal, compares the rise and fall times to desired values, and independently controls the rise and fall times to equal the desired values. The rise and fall times may be controlled by generating one or more first correction bits based on a difference between the rise time and a corresponding one of the desired values, generating one or more second correction bits based on a difference between the fall time and a corresponding one of the desired values, and then separately applying the bits to independently control the rise and fall times of the driving signal. The driving signal may be an I/O signal or another type of signal.
29 citations
TL;DR: In this article, a plate under impulse loads and the correlated Shock Response Spectrum (SRS) has been carried out and the Reissner-Mindlin plate has been considered and the modal analysis technique used to develop the solution.
29 citations
TL;DR: In this article, experimental results demonstrate fast turn-on and high power-handling capability in light-activated silicon junction (PNPN) devices, with rise time to 2 ns, rate of current rise to 760 kA/μs, and switched power level of 10 MW.
Abstract: Experimental results are presented demonstrating fast turn‐on and high power‐handling capability in light‐activated silicon junction (PNPN) devices. Rise time to 2 ns, rate of current rise to 760 kA/μs, and switched power level of 10 MW were demonstrated.
29 citations
TL;DR: The energy expression found is useful for pencil-and-paper evaluation and affords an intuitive understanding of the network dissipation, since each term has an evident physical meaning.
Abstract: In this paper, the energy consumption of RC ladder networks, which can represent chains of transmission gate or long wire interconnections, is modeled. Their energy dependence on the input rise time is analyzed by assuming a ramp input waveform. Since the analysis can be carried out in a straightforward manner only for very simple RC ladder networks, the exact analysis is first limited to asymptotic values of the input rise time T (i.e., for T/spl rarr/0 and T/spl rarr//spl infin/). Successively, the energy expression is extended to arbitrary values of the input rise time by introducing a suitable equivalent first-order RC circuit, whose resistance and capacitance are simply related to the resistances and capacitances of the original network. The energy expression found is useful for pencil-and-paper evaluation and affords an intuitive understanding of the network dissipation, since each term has an evident physical meaning. By comparison with SPICE simulations, the energy expression proposed is showed to be accurate enough for modeling purposes.
29 citations