Topic
Rise time
About: Rise time is a research topic. Over the lifetime, 4748 publications have been published within this topic receiving 47512 citations.
Papers published on a yearly basis
Papers
More filters
TL;DR: In this paper, the impluse response of a fiber optic probe hydrophone (FOPH) is determined through it's step response obtained by using a self-focusing electromagnetic shock wave excitation.
Abstract: The impluse response of a fiber optic probe hydrophone (FOPH) is determined through it’s step response obtained by using a self-focusing electromagnetic shock wave excitation. The experimental transfer function agrees well with the theoretical calculation of the transient response by diffraction of the acoustic wave at the fiber end face. A rise time of about 5 ns has been obtained for the shock front of the self-focusing shock wave generator by the deconvolution of the output signal of the hydrophone with it’s impulse response. The FOPH can be used as a standard hydrophone for the absolute wideband measurement of shock waves of lithotripters and of acoustic waves in liquids in general.
29 citations
TL;DR: In this article, a theoretical investigation of the dynamic thermoelastic response of pulsed photothermal deformation (PTD) deflection detections for some Q-switch laser pulses and finite thickness samples has been presented.
Abstract: A theoretical investigation of the dynamic thermoelastic response of pulsed photothermal deformation (PTD) deflection detections for some Q‐switch laser pulses and finite thickness samples has been presented. The results show that signals can be characterized by a quasistatic process when the laser pulse rise time is on the order of 1 μs and the sample thickness is in submillimeter range (typically for semiconductor wafers). However, as the pulse rise time decreases or the sample thickness increases, the dynamic wave behavior gradually becomes apparent, and the quasistatic approximation gives only a contour curve of the dynamic time evolution. When the rise time decreases on the order of 10 ns or less for the same kind of the samples, the PTD deflection signal reflects a totally dynamic wave behavior.
29 citations
TL;DR: In this article, an explosive-driven high-voltage primary power source and a power-conditioning stage were combined with a conventional pulsed power technology to produce an autonomous highvoltage power supply.
Abstract: A conventional pulsed power technology has been combined with an explosive pulsed power technology to produce an autonomous high-voltage power supply. The power supply contained an explosive-driven high-voltage primary power source and a power-conditioning stage. The ultracompact explosive-driven primary power source was based on the physical effect of shock-wave depolarization of high-energy Pb(Zr52Ti48)O3 ferroelectric material. The volume of the energy-carrying ferroelectric elements in the shock-wave ferroelectric generators (SWFEGs) varied from 1.2 to 2.6cm3. The power-conditioning stage was based on the spiral vector inversion generator (VIG). The SWFEG-VIG system demonstrated successful operation and good performance. The amplitude of the output voltage pulse of the SWFEG-VIG system exceeded 90kV, with a rise time of 5.2ns.
29 citations
Patent•
31 May 2013TL;DR: In this paper, a power converter including a transformer and a full-bridge circuit including parallel-connected first and second arms, each including series-connected FETs, is described.
Abstract: A power converter including: a transformer in which first and second voltages are induced; a full-bridge circuit including parallel-connected first and second arms each including series-connected FETs; and a control circuit, wherein, within a given time period for which a voltage V2 is the first voltage, the control circuit performs control so that FETs in at least one arm are on for an on time period, and, when Pon, PX, PS, α, and β respectively denote a duration of the on time period, a duration of the given time period, a duration of a time period from the end of the on time period to a time point of transition from the first to second voltage, a rise time of a body diode of each FET, and a fall time of the body diode, Pon>(β/α)PS, 0≦PS<α, and Pon+PS≦PX are satisfied.
28 citations
TL;DR: In this paper, a novel ultrabroad-band amplifier configuration suitable for GaAs FET's has been developed, which operates as a capacitor-resistor (C-R ) coupled mnpfifier circuit in the low-frequency range in which |S/sub 21/| for the GaAsFET's is constant.
Abstract: A novel ultrabroad-band amplifier configuration suitable for GaAs FET's has been developed. The developed amplifier circuit operates as a capacitor-resistor ( C-R ) coupled mnpfifier circuit in the low-frequency range in which |S/sub 21/| for the GaAs FET's is constant. It also operates as a lossless impedance matching circuit in the microwave frequency range in which |S/sub 21/| for the GaAs FET has a slop of approximately -6 dB/octave. Using this configuration technique, 800-kHz 9.5-GHz band (13.5 octaves), 8.6-dB gain GaAs FET amplifier modules have been realized. The amplifier module has 40-ps step response rise time. It also has low input and output VSWR. By cascading two-amplifier modules, 19-dB gain over the 800-kHz to 8.5-GHz range and 50-ps step response rise time were obtained. NF is lower than 8 dB over the 50-MHz to 6-GHz range.
28 citations