scispace - formally typeset
Search or ask a question

Showing papers on "Scanning tunneling spectroscopy published in 1974"


Journal ArticleDOI
TL;DR: In this article, a double-barrier structure with a thin GaAs sandwiched between two GaAlas barriers has been shown to have resonance in the tunneling current at voltages near the quasistationary states of the potential well.
Abstract: Resonant tunneling of electrons has been observed in double‐barrier structures having a thin GaAs sandwiched between two GaAlas barriers. The resonance manifests itself as peaks or humps in the tunneling current at voltages near the quasistationary states of the potential well. The structures have been fabricated by molecular beam epitaxy which produces extremely smooth films and interfaces.

1,633 citations


Journal ArticleDOI
TL;DR: In this article, Fowler-Nordheim tunneling was shown to be consistent with elastic tunneling into the silicon direct conduction band and, at still lower fields, inelastic tunnelling into the indirect conduction bands.
Abstract: Recent results on tunneling in thin MOS structures are described. Thermally grown SiO2 films in the thickness range of 22-40 A have been shown to be effectively uniform on an atomic scale and exhibit an extremely abrupt oxide-silicon interface. Resonant reflections are observed at this interface for Fowler-Nordheim tunneling and are shown to agree with the exact theory for a trapezoidal barrier. Tunneling at lower fields is consistent with elastic tunneling into the silicon direct conduction band and, at still lower fields, inelastic tunneling into the indirect conduction band. Approximate dispersion relations are obtained over portions of the silicon-dioxide energy gap and conduction band.

198 citations


Journal ArticleDOI
TL;DR: In this article, the tunneling characteristics of Cr/SiO2/Si structures in the thickness range 23-34 A were reported and the E −κ dependence in the energy range extending 3.5 eV below the oxide conduction band was determined by the thickness dependence to be approximately of the Franz form with an effective mass ratio of 0.42.
Abstract: The tunneling characteristics of Cr/SiO2/Si structures in the thickness range 23–34 A are reported. The E‐κ dependence in the energy range extending 3.5 eV below the oxide conduction band is determined by the thickness dependence to be approximately of the Franz form with an effective mass ratio of 0.42. Tunneling into the indirect conduction band of silicon is reduced by a thickness‐independent factor which decreases approximately exponentially with the energy below the direct band edge.

68 citations



Journal ArticleDOI
Ivar Giaever1
01 Jun 1974
TL;DR: Work on tunneling between superconductors is discussed and some experimental results are given.
Abstract: Work on tunneling between superconductors is discussed and some experimental results are given. 2 refs.

7 citations


Journal ArticleDOI
TL;DR: In this article, the effect of external electric field on quantum tunneling in DNA was examined and it was found that an increasing electric field did increase the tunneling rate. But, the effect was limited to three different electric fields, i.e., 3.50, 3.5 and 3.6.

7 citations



Book ChapterDOI
01 Jan 1974
TL;DR: In this article, the authors measured the conductance σ = dI/dV of tunnel junctions between ferromagnetic thin films and very thin superconducting A1 films at a temperature of 0.5°K and in magnetic fields H up to 55 kOe.
Abstract: We have measured the conductance σ = dI/dV of tunnel junctions between ferromagnetic thin films and very thin superconducting A1 films1 at a temperature of 0.5°K and in magnetic fields H up to 55 kOe. From plots of σ vs. the applied bias voltage V we can determine the spin polarization P ≡ (n ↑ — n↓)/(n↑ + n↓) of the tunneling electrons, where n↑ and n↓ are the numbers of electrons with magnetic moment parallel and antiparallel to H, respectively. The energy of the electrons involved is within about 1 meV of the Fermi energy E F. This method depends on the fact2 that the density of states of very thin A1 films is split into spin-up and spin-down components by an applied magnetic field. Thus by choosing the bias voltage appropriately, one can control whether spin-up or spin-down electrons can tunnel.

1 citations


Journal ArticleDOI
TL;DR: In this paper, the phonon peaks in Ge have been observed and identified using electron tunneling experiments with metal-Ge-metal junctions, and they have been identified using an electron detector.

1 citations


Journal ArticleDOI
TL;DR: In this paper, the authors show that the tunneling spectra of extremely thin Al, In and Pb films show an increase of the dynamic resistance in the low bias range, which can be explained by size quantization of the electronic states in small particles.

1 citations