Showing papers on "Scanning tunneling spectroscopy published in 1983"
IBM1
TL;DR: In this paper, a modified adatom model with 12 adatoms per unit cell and an inhomogeneously relaxed underlying top layer was used for Si(111) reconstruction.
Abstract: The 7× 7 reconstruction on Si(111) was observed in real space by scanning tunneling microscopy. The experiment strongly favors a modified adatom model with 12 adatoms per unit cell and an inhomogeneously relaxed underlying top layer.
1,550 citations
IBM1
TL;DR: In this article, the surface topographies in real space and work function profiles on an atomic sale were obtained using scanning tunneling microscopy, a novel technique based on vacuum tunneling.
648 citations
IBM1
TL;DR: In this article, strong neutralization of sputtered Cs/sup +/ ions is observed whenever the tunneling channel is opened by changing the surface work function so that a crossing of the Fermi level by the Cs 6s level occurs.
Abstract: Direct evidence has been obtained for electron tunneling between sputtered Cs/sup +/ ions and the solid surfaces from which they originate. Strong neutralization of the Cs/sup +/ ions is observed whenever the tunneling channel is opened by changing the surface work function so that a crossing of the Fermi level by the Cs 6s level occurs. A tunneling model which takes the spatial dependences of the position and the width of the atomic level into account explains the data successfully.
187 citations
TL;DR: In this paper, the resonance tunneling through localized eigenstates is proven to allow for the localization spectroscopy, and evaluated characteristics of the resonance oscillations are in agreement with experiments.
81 citations
TL;DR: In this paper, two distinct components of tunneling current in silicon metaloxide-semiconductor structures are identified: electron tunneling from the conduction band of the semiconductor and hole current in the silicon substrate.
Abstract: Two distinct components of tunneling current in silicon metal‐oxide‐semiconductor structures are identified. In addition to the electron tunneling from the conduction band of the semiconductor, there is a second component interpreted as electron tunneling from the valence band. This is manifested as hole current in the silicon substrate. The ratio of valence‐band to conduction‐band tunneling currents is about 10−3, and increases slightly with the oxide field. This ratio is independent of oxide thickness, temperature, and gate‐electrode material.
71 citations
TL;DR: In this article, a general expression for the tunneling current for any two electrodes of arbitrary shape is derived and discussed, and a discussion of the resolution predicted by the theory is presented.
46 citations
IBM1
TL;DR: In this article, the authors discuss the potential of a new technique for surface imaging on an atomic scale: scanning tunneling microscopy (SVM) for 3D topographies of surfaces and work-function profiles.
40 citations
TL;DR: Inelastic electron tunneling spectroscopy has been successfully used in studies of catalysis, biology, trace impurity detection, and electronic excitations and shows great promise in the area of solid-state electronic chemical sensing.
Abstract: Inelastic electron tunneling spectroscopy is a useful technique for the study of vibrational modes of molecules adsorbed on the surface of oxide layers in a metal-insulator-metal tunnel junction. The technique involves studying the effects of adsorbed molecules on the tunneling spectrum of such junctions. The data give useful information about the structure, bonding, and orientation of adsorbed molecules. One of the major advantages of inelastic electron tunneling spectroscopy is its sensitivity. It is capable of detecting on the order of 10 to the 10th molecules (a fraction of a monolayer) on a 1 sq mm junction. It has been successfully used in studies of catalysis, biology, trace impurity detection, and electronic excitations. Because of its high sensitivity, this technique shows great promise in the area of solid-state electronic chemical sensing.
39 citations
TL;DR: A detailed analysis of the reverse characteristics of In0.53Ga0.47 was performed in this article, where it was concluded that thermal activation of deep traps and subsequent tunneling of carriers into band states leads to the additional dark current component.
Abstract: A detailed analysis of the reverse characteristics of In0.53Ga0.47As pin-photodiodes at various temperatures reveals, besides generation, diffusion and band-to-band tunneling of carriers, an additional contribution to the dark current due to tunneling through an energy barrier of 0.16±0.02 eV. In deep-level transient spectroscopy measurements a thermal activation energy of 0.57±0.01 eV, equal to the gap energy minus the tunneling barrier, has been found. From these two measurements it can be concluded that thermal activation of deep traps and subsequent tunneling of carriers into band states leads to the additional dark current component.
19 citations
TL;DR: In this paper, photo-induced tunneling currents in thin-film Ni-NiO-Ni tunneling junctions were measured as a function of photon energy over the range 2.0 eV \leq hf \LEq 2.7 eV.
Abstract: Photoinduced tunneling currents in thin-film Ni-NiO-Ni tunneling junctions were measured as a function of photon energy over the range 2.0 eV \leq hf \leq 2.7 eV. The photoresponse mechanism was found to be consistent with a photon assisted tunneling mechanism. Inelastic electron-electron collisions were found to strongly influence the photoassisted tunneling currents.
16 citations
01 Jan 1983
TL;DR: In this article, an expository discussion of both the standard one-electron as well as the more modern many-body formulations of electron tunneling theory is presented. But the analysis is primarily concerned with normal tunneling phenomena and superconductive phenomena are also considered.
Abstract: This review is an expository discussion of both the standard one-electron as well as the more modern many-body formulations of electron tunneling theory. The purpose of this is to provide, in a tutorial fashion, the basic physics of electron tunneling in solids and across interfaces. Application of tunneling theory to point-contact junctions and tunneling spectroscopies is discussed. Although the analysis is primarily concerned with normal tunneling phenomena some superconductive phenomena are also considered.
TL;DR: The charge density wave induced energy gap has been observed by tunneling measurements over the nearly-commensurate phase of IT-TaS2 as discussed by the authors, where the energy gap stays near 0.5eV from 215k up to around 280k, and above this temperature it decreases with increasing the temperature.
Abstract: The charge density wave induced energy gap has been observed by tunneling measurements over the nearly-commensurate phase of IT-TaS2. The energy gap stays near 0.5eV from 215K up to around 280K, and above this temperature it decreases with increasing the temperature. In addition to the structures giving the energy gap, a group of peak structures connected with the charge density waves have been observed in the dI/dV vs. V curves of the tunneling junctions, though the origin of those is not clarified yet. Connections of the energy gap with the electronic properties of this material are discussed.
TL;DR: In this article, the authors present an experimental study of the relative intensities in inelastic tunneling spectra of formic and acetic acid chemisorbed on alumina.
01 Apr 1983
TL;DR: In this article, the effect of dissipation on quantum tunneling in Josephson junctions is investigated and it is shown that friction can lead to an increase in the lifetime of the metastable state of the junction.
Abstract: The effect of dissipation on macroscopic quantum tunneling in Josephson junctions is investigated. It is shown that friction can lead to an increase in the lifetime of the metastable state of the junction. It is found that a sharp division of the tunneling probability into a purely quantum-mechanical probability for tunneling in the absence of friction and a probability for dissipation-involving tunneling is possible only in the case of weak friction.