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Scanning tunneling spectroscopy

About: Scanning tunneling spectroscopy is a research topic. Over the lifetime, 7886 publications have been published within this topic receiving 213828 citations.


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TL;DR: Using a low temperature scanning tunneling microscope, low energy adsorbate-substrate vibrational modes of benzene molecules adsorbed on a Ag(110) surface are detected and it is demonstrated that such vibrations represent a fingerprint of the molecules' chemical state and environment.
Abstract: Using a low temperature scanning tunneling microscope, we have detected low energy adsorbate-substrate (external or frustrated) vibrational modes of benzene molecules adsorbed on a Ag(110) surface We demonstrate that such vibrations represent a fingerprint of the molecules' chemical state and environment; two different vibrational spectra are measured on molecules populating two different adsorption states We also find that the distortion of the adsorption geometry of the molecules may give rise to the excitation of additional (initially hidden) modes Important differences in the spatial distribution of the inelastic signal are also observed for these external modes

79 citations

Journal ArticleDOI
TL;DR: In this paper, the growth of bilayer PdSe2 on a graphene-SiC(0001) substrate by molecular beam epitaxy (MBE) was reported, and a bandgap of 1.15 ± 0.07 eV was revealed by scanning tunneling spectroscopy (STS).
Abstract: Two-dimensional (2D) materials have received significant attention due to their unique physical properties and potential applications in electronics and optoelectronics. Recent studies have demonstrated that exfoliated PdSe2, a layered transition metal dichalcogenide (TMD), exhibits ambipolar field-effect transistor (FET) behavior with notable performance and good air stability, and thus serves as an emerging candidate for 2D electronics. Here, we report the growth of bilayer PdSe2 on a graphene-SiC(0001) substrate by molecular beam epitaxy (MBE). A bandgap of 1.15 ± 0.07 eV was revealed by scanning tunneling spectroscopy (STS). Moreover, a bandgap shift of 0.2 eV was observed in PdSe2 layers grown on monolayer graphene as compared to those grown on bilayer graphene. The realization of nanoscale electronic junctions with atomically sharp boundaries in 2D PdSe2 implies the possibility of tuning its electronic or optoelectronic properties. In addition, on top of the PdSe2 bilayers, PdSe2 nanoribbons and stacks of nanoribbons with a fixed orientation have been fabricated. The bottom-up fabrication of low-dimensional PdSe2 structures is expected to enable substantial exploration of its potential applications.

79 citations

Journal ArticleDOI
01 Jun 2014-EPL
TL;DR: In this paper, the authors reported the successful growth of the NdO1-xFxBi1-yS2 single crystals and proved the intrinsic superconductivity.
Abstract: We report the successful growth of the NdO1-xFxBi1-yS2 single crystals and prove the intrinsic superconductivity. Resistive and magnetic measurements reveal that the bulk superconducting transition occurs at T-c = 4.83 K. Measurements of excess conductivity and the in-plane angle-dependent resistance reveal a giant superconducting fluctuation far above T-c (extending to 2T(c)-4T(c)). This is supported by the Nernst and the scanning tunneling measurements. Analysis based on the anisotropic Ginzburg-Landau theory gives a very large anisotropy gamma = root m(c)/m(ab) approximate to 30-50. Two gap features with magnitudes of about 3.5 +/- 0.3 meV and 7.5 +/- 1 meV were observed by scanning tunneling spectroscopy. The smaller gap is associated with the bulk superconducting transition yielding a huge ratio 2 Delta(1)(s)/k(B)T(c) = 16.8, and the gapped feature remains up to 20-30 K. Another fascinating phenomenon is that the normal state recovered by applying a high magnetic field along the c-axis shows an anomalous semiconducting behavior. All these suggest that the superconductivity in this newly discovered superconductor may have an exotic reason which is beyond the BCS picture. Copyright (C) EPLA, 2014

79 citations

Journal ArticleDOI
TL;DR: In this paper, the dc I-V characteristic of a triple-barrier resonant tunneling diode (RTD) integrated in a bowtie antenna and driven by THz radiation displays up to five additional resonant channels.
Abstract: The dc I–V characteristic of a triple‐barrier resonant tunneling diode (RTD) integrated in a bowtie antenna and driven by THz radiation displays up to five additional resonant tunneling channels. These channels appear as additional peaks in the I–V characteristic whose voltage positions vary linearly with frequency in the investigated range between ν=1.0 and 3.4 THz. We attribute these peaks to photon‐assisted tunneling processes corresponding to absorption and stimulated emission of up to three photons. The experiments suggest that such a device can be utilized to detect and generate THz radiation.

79 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202345
202289
2021128
2020143
2019134
2018159