Topic
Scanning tunneling spectroscopy
About: Scanning tunneling spectroscopy is a research topic. Over the lifetime, 7886 publications have been published within this topic receiving 213828 citations.
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TL;DR: In this article, the authors measured barriers for electron tunneling between a Pt-Ir tip and a gold substrate under potential control, obtaining values similar to those reported in ultrahigh vacuum.
Abstract: We have measured barriers for electron tunneling between a Pt-Ir tip and a gold substrate under potential control, obtaining values similar to those reported in ultrahigh vacuum. However, in contrast to vacuum tunneling, the data show a strong dependence on the bias applied between the tip and the substrate. They are only weakly dependent on the electrochemical potential of the substrate. The barrier changes with the direction of electron tunneling, an effect we attribute to permanent polarization in the gap. We observe a sharp dip near zero bias for tunneling in water. It is not observed for tunneling in a nonpolar solvent, and we attribute it to induced polarization in the tunnel gap
71 citations
TL;DR: In this article, Pd, Ag, Cd and Au clusters of varying sizes have been investigated by scanning tunneling spectroscopy under ultra-high vacuum and the conductance of the clusters decreases markedly when the cluster diameter is ≤ 1 nm.
71 citations
71 citations
TL;DR: In this article, the authors used the perturbative instanton approach to solve the dynamical problem without reducing the number of degrees of freedom, and derived the tunneling path and globally uniform wave functions from the fourth-order Hamilton-Jacobi equation and second-order transport equation.
71 citations
TL;DR: In this article, the authors show that the conventional dangling bond picture is insufficient to explain scanning tunneling microscopy (STM) images of III-V (110) semiconductor surfaces.
Abstract: We show that the conventional dangling bond picture is insufficient to explain scanning tunneling microscopy (STM) images of III-V (110) semiconductor surfaces. Voltage-dependent STM images combined with ab initio electronic structure calculations give evidence that surface resonances fundamentally change the STM images of InP, GaP, and GaAs (110). The occupied dangling bond state dominates the images at negative voltages, but its counterpart, the empty dangling bond state, is only of relevance for small positive voltages. The empty state images are rather governed by empty resonances which lead to a 90\ifmmode^\circ\else\textdegree\fi{} rotation of the apparent rows.
71 citations