Topic
Scanning tunneling spectroscopy
About: Scanning tunneling spectroscopy is a research topic. Over the lifetime, 7886 publications have been published within this topic receiving 213828 citations.
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TL;DR: In this article, the Fowler-Nordheim tunneling of electrons from <100−oriented Si into thermally grown SiO2 has been studied and the effects of the Si band structure and the accumulation layer have been carefully considered.
Abstract: The Fowler‐Nordheim tunneling of electrons from <100≳‐oriented Si into thermally grown SiO2 has been studied. The effects of the Si band structure and the accumulation layer have been carefully considered. Classical image barrier lowering has also been analyzed. The agreement between the theory and the experimental results is excellent over a large range of tunneling current. The study enables a consistent treatment of various tunneling problems where a more simplified analysis is not adequate.
66 citations
TL;DR: In this paper, the (001) surface of a highly doped n-type TiO sub 2 crystal was imaged in air with a Pt-Ir tip with a scanning tunneling microscope (STM).
Abstract: The (001) surface of a highly doped ({approximately} 10{sup 19} cm{sup {minus}3}) n-type TiO{sub 2} crystal, following polishing, wet etching, and cleaning, was imaged in air with a Pt-Ir tip with a scanning tunneling microscope (STM). Good images of the surface could be obtained with the sample held at negative voltage (positive tip bias), with the high-resolution image showing only Ti atoms. Tunneling spectroscopy, involving the recording of i-V curves and dynamic conductance (di/dV)-V curves with the tip held over a given spot on the TiO{sub 2} surface, was also carried out. The resulting curves show electron tunneling into the conduction band and from the valence band, as well as a prominent peak identified as a surface state about 0.3 eV below the conduction band edge.
66 citations
TL;DR: In this article, the in situ imaging of individual supported nanoparticles with scanning tunneling microscopy at elevated temperatures while changing the ambient pressure of the reactants over ≈10 orders of magnitude is demonstrated.
66 citations
IBM1
66 citations
TL;DR: In this paper, boron-doped and undoped silicon nanowires (SiNWs) were observed to have clear and regular nanoscale domains on the SiNW surface.
Abstract: Scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) measurements have been performed on boron-doped and undoped silicon nanowires (SiNWs). STM images clearly showed the presence of nanoparticle chains and nanowires in the B-doped SiNWs sample. Clear and regular nanoscale domains were observed on the SiNW surface, which were attributed to boron-induced surface reconstruction. STS measurements have provided current–voltage curves for SiNWs, which showed clearly enhancement in electrical conductivity by boron doping.
66 citations