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Scanning tunneling spectroscopy

About: Scanning tunneling spectroscopy is a research topic. Over the lifetime, 7886 publications have been published within this topic receiving 213828 citations.


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TL;DR: In this paper, a unique surface preparation method is used to prepare a low surface state density Si surface, which enables the control of band bending with scanning tunneling microscopy (STM) to investigate semiconductor subsurface properties.
Abstract: Scanning tunneling microscopy (STM) methods are used to directly control the barrier height of a metal tunnel tip-semiconductor tunnel junction. Barrier behavior is measured by tunnel current-voltage spectroscopy and compared to theory. A unique surface preparation method is used to prepare a low surface state density Si surface. Control of band bending with this method enables STM investigation of semiconductor subsurface properties.

54 citations

Journal ArticleDOI
TL;DR: Experimental observation indicates that the presence of the gap states provides a means to perform local band-gap engineering as well as doping without impurity substitution in semiconducting single-wall carbon nanotubes.
Abstract: Several paired, localized gap states were observed in semiconducting single-wall carbon nanotubes using spatially resolved scanning tunneling spectroscopy. A pair of gap states is found far from the band edges, forming deep levels, while the other pair is located near the band edges, forming shallow levels. With the help of a first-principles study, the former is explained by a vacancy-adatom complex while the latter is explained by a pentagon-heptagon structure. Our experimental observation indicates that the presence of the gap states provides a means to perform local band-gap engineering as well as doping without impurity substitution.

54 citations

Journal ArticleDOI
TL;DR: In this article, a double Rydberg series of image potential states (IPSs) is predicted for two-dimensional solids, in contrast to a single series present in 3D solids.
Abstract: Image potential states (IPSs) are electronic states localized in front of a surface in a potential well, formed by the surface projected bulk band gap on one side and the image potential barrier on the other. In the limit of a two-dimensional solid, a double Rydberg series of IPSs has been predicted, which is in contrast to a single series present in three-dimensional solids. Here, we confirm this prediction experimentally for mono- and bilayer graphene. The IPSs of epitaxial graphene on SiC are measured by scanning tunneling spectroscopy and the results are compared with ab-initio band structure calculations. Despite the presence of the substrate, both calculations and experimental measurements show that the first pair of the double series of IPSs survives and eventually evolves into a single series for graphite. Thus, IPSs provide an elegant quantum probe of the interfacial coupling in graphene systems.

54 citations

Journal ArticleDOI
TL;DR: In this paper, tunneling microscopy and spectroscopy are used to characterize defects in Al overlayers on Si(111) at low coverages where Al and Si adatoms are both present.
Abstract: Tunneling microscopy and spectroscopy are used to characterize defects in Al overlayers on Si(111). At low coverages where Al and Si adatoms are both present, voltage‐dependent scanning tunneling microscopy imaging allows them to be selectively imaged due to their different electronic structures. In (3)1/2‐Al, Si adatoms substituting for Al give rise to a defect state at −0.4 eV which is strongly localized in space. Band‐bending measurements indicate that the Si substitutional defects are electrically neutral. The results are interpreted in terms of a Mott–Hubbard model for a strongly correlated system.

54 citations

Journal ArticleDOI
TL;DR: In this paper, a theoretical model for studying elementary processes in vibrational scanning tunneling microscopy/spectroscopy is presented, which includes the vibrational damping due to electron-hole pair excitations.

54 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202345
202289
2021128
2020143
2019134
2018159