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Scanning tunneling spectroscopy
About: Scanning tunneling spectroscopy is a research topic. Over the lifetime, 7886 publications have been published within this topic receiving 213828 citations.
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TL;DR: Study of electronic properties and scanning tunneling microscopy of the most common configurations of nitrogen- or boron-doped graphene and carbon nanotubes using density functional theory shows common fingerprints for the same doping type for graphene, and metallic or semiconducting nanot tubes.
Abstract: We report on studies of electronic properties and scanning tunneling microscopy (STM) of the most common configurations of nitrogen- or boron-doped graphene and carbon nanotubes using density functional theory. Charge transfer, shift of the Fermi level, and localized electronic states are analyzed as a function of the doping configurations and concentrations. The theoretical STM images show common fingerprints for the same doping type for graphene, and metallic or semiconducting nanotubes. In particular, nitrogen is not imaged in contrast to boron. STM patterns are mainly shaped by local density of states of the carbon atoms close to the defect. STM images are not strongly dependent on the bias voltage when scanning the defect directly. However, the scanning of the defect-free side of the tube displays a perturbation compared to the pristine tube depending on the applied bias.
110 citations
TL;DR: In this article, the eigenstates in the potential well formed between the tip and the sample are calculated within a one-dimensional model, which permits to locally determine a work function reduction of 1.3 eV in going from the bare substrate to NaCl islands of up to 3 ML.
Abstract: Electrons trapped in field emission resonances (FERs) in front of a Ag(100) surface covered with ultrathin NaCl islands are probed by scanning tunneling spectroscopy. The eigenstates in the potential well formed between the tip and the sample are calculated within a one-dimensional model. This approach permits to locally determine a work function reduction of 1.3 eV in going from the bare substrate to NaCl islands of up to 3 ML. Spatial mapping of the FERs across a NaCl island edge at typical distances of 1 nm from the surface yields a lateral resolution for the surface potential changes of 1 nm.
110 citations
TL;DR: In this paper, the linear conductance due to sequential tunneling is calculated by solving a master equation for temperatures below and above the average level spacing in the dot and the contribution from tunneling via a virtual intermediate state (cotunneling) is also included.
Abstract: Resonant tunneling through a quantum dot weakly coupled to Tomonaga-Luttinger liquids is discussed. The linear conductance due to sequential tunneling is calculated by solving a master equation for temperatures below and above the average level spacing in the dot. When the parameter $g$ characterizing the Tomonaga-Luttinger liquid is smaller than 1/2, the resonant tunneling process is incoherent down to zero temperature. At low temperature $T$ the height and width of the conductance peaks in the Coulomb blockade oscillations are proportional to ${T}^{1/g\ensuremath{-}2}$ and $T$, respectively. The contribution from tunneling via a virtual intermediate state (cotunneling) is also included. The resulting conductance formula can be applied for the resonant tunneling between edge states of fractional quantum Hall liquids with filling factor $\ensuremath{
u}=1/(2m+1)=g$.
110 citations
TL;DR: The scanning tunneling microscope has been used to image a reduced TiO2(110) surface in ultrahigh vacuum, demonstrating that atomic resolution imaging of an ionic, wide band gap (3.2 electron volts) semiconductor is possible.
Abstract: The scanning tunneling microscope has been used to image a reduced TiO(2)(110) surface in ultrahigh vacuum. Structural units with periodicities rangng from 21 to 3.4 angstroms have been clearly imaged, demonstrating that atomic resolution imaging of an ionic, wide band gap (3.2 electron volts) semiconductor is possible. The observed surface structures can be explained by a model involving ordered arrangements of two-dimensional defects known as crystallographic shear planes and indicate that the topography of nonstoichiometric oxide surfaces can be complex.
110 citations
TL;DR: Scanning tunneling spectroscopy of thin Fe films on W(110) shows that the electronic structure of domains and domain walls is different, and nanometer-scale magnetic structure information is obtained even by using nonmagnetic probe tips.
Abstract: Scanning tunneling spectroscopy (STS) of thin Fe films on W(110) shows that the electronic structure of domains and domain walls is different. This experimental result is explained on the basis of first-principles calculations. A detailed analysis reveals that the spin-orbit induced mixing between minority ${d}_{xy+xz}$ and minority ${d}_{{z}^{2}}$ spin states depends on the magnetization direction and changes the local density of states in the vacuum detectable by STS. As a consequence nanometer-scale magnetic structure information is obtained even by using nonmagnetic probe tips.
110 citations