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Schottky barrier

About: Schottky barrier is a research topic. Over the lifetime, 22570 publications have been published within this topic receiving 427746 citations. The topic is also known as: Schottky barrier junction.


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Journal ArticleDOI
TL;DR: In this article, the photodetection properties of the graphene-Si schottky junction were investigated by measuring current-voltage characteristics under 1.55- $\mu{\rm m}$ excitation laser.
Abstract: This paper reports on photodetection properties of the graphene-Si schottky junction by measuring current–voltage characteristics under 1.55- $\mu{\rm m}$ excitation laser. The measurements have been done on a junction fabricated by depositing mechanically exfoliated natural graphite on top of the pre-patterned silicon substrate. The electrical Schottky barrier height is estimated to be (0.44–0.47) eV with a minimum responsivity of 2.8 mA/W corresponding to an internal quantum efficiency of 10%, which is almost an order of magnitude larger than regular Schottky junctions. A possible explanation for the large quantum efficiency related to the 2-D nature of graphene is discussed. Large quantum efficiency, room temperature IR detection, ease of fabrication along with compatibility with Si devices can open a doorway for novel graphene-based photodetectors.

134 citations

Journal ArticleDOI
11 Jan 2018-ACS Nano
TL;DR: This work provides the area-controllable synthesis of a manufacturable MXene from a transition metal dichalcogenide material and the formation of a metal/semiconductor junction structure.
Abstract: The epitaxial synthesis of molybdenum carbide (Mo2C, a 2D MXene material) via chemical conversion of molybdenum disulfide (MoS2) with thermal annealing under CH4 and H2 is reported. The experimental results show that adjusting the thermal annealing period provides a fully converted metallic Mo2C from MoS2 and an atomically sharp metallic/semiconducting hybrid structure via partial conversion of the semiconducting 2D material. Mo2C/MoS2 hybrid junctions display a low contact resistance (1.2 kΩ·μm) and low Schottky barrier height (26 meV), indicating the material’s potential utility as a critical hybrid structural building block in future device applications. Density functional theory calculations are used to model the mechanisms by which Mo2C grows and forms a Mo2C/MoS2 hybrid structure. The results show that Mo2C conversion is initiated at the MoS2 edge and undergoes sequential hydrodesulfurization and carbide conversion steps, and an atomically sharp interface with MoS2 forms through epitaxial growth of ...

134 citations

Journal ArticleDOI
TL;DR: In this paper, the electrical properties of thin sandwich cells (M/Pc/Au) were studied in a quantitative fashion, where M is either aluminum or indium (150-400 A) and Pc represents metalfree phthalocyanine (H2Pc) or its zinc complex (ZnPc).
Abstract: The electrical properties of thin sandwich cells (M/Pc/Au) have been studied in a quantitative fashion. Here, M is either aluminum or indium (150–400 A thick), and Pc represents metalfree phthalocyanine (H2Pc) or its zinc complex (ZnPc). The phthalocyanines were ∼3000 A thick. These devices were assembled by deposition in vacuo, but were studied by recording current–voltage curves in dry air. All showed rectification. Forward bias corresponded to a negative voltage at M. Cells with In contacts adhered quantitatively to expectations for Schottky junctions at the In/Pc boundaries. Cells with Al contacts passed much smaller currents under a given bias, and failed to behave quantitatively like Schottky junction devices. Various pieces of evidence indicate that the Al/Pc junction is spoiled by an interposed zone of Al2O3.

133 citations

Journal ArticleDOI
TL;DR: The results suggest that highly crystalline molecular monolayers are promising form factors to build high-performance OTFTs and investigate device physics and allow us to precisely model how the molecular packing changes the transport and contact properties.
Abstract: Organic thin-film transistors (OTFTs) with high mobility and low contact resistance have been actively pursued as building blocks for low-cost organic electronics. In conventional solution-processed or vacuum-deposited OTFTs, due to interfacial defects and traps, the organic film has to reach a certain thickness for efficient charge transport. Using an ultimate monolayer of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) molecules as an OTFT channel, we demonstrate remarkable electrical characteristics, including intrinsic hole mobility over 30 cm2/Vs, Ohmic contact with 100 Ω · cm resistance, and band-like transport down to 150 K. Compared to conventional OTFTs, the main advantage of a monolayer channel is the direct, nondisruptive contact between the charge transport layer and metal leads, a feature that is vital for achieving low contact resistance and current saturation voltage. On the other hand, bilayer and thicker C8-BTBT OTFTs exhibit strong Schottky contact and much higher contact resistance but can be improved by inserting a doped graphene buffer layer. Our results suggest that highly crystalline molecular monolayers are promising form factors to build high-performance OTFTs and investigate device physics. They also allow us to precisely model how the molecular packing changes the transport and contact properties.

133 citations

Journal ArticleDOI
TL;DR: In this paper, a static induction transistors (SITs) using copper phthalocyanine films and Al Schottky gate electrode are fabricated and the basic electrical characteristics are investigated.

133 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023565
2022988
2021672
2020758
2019824
2018847