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Schottky barrier

About: Schottky barrier is a research topic. Over the lifetime, 22570 publications have been published within this topic receiving 427746 citations. The topic is also known as: Schottky barrier junction.


Papers
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Journal ArticleDOI
TL;DR: In this article, a brief review of classification, application and sources of near-ultraviolet (UV) radiation the methods for fabricating UV photodetectors and characteristics of the photoconductive cells, p-n junction structure and Schottky barrier photodiodes are discussed.
Abstract: After a brief review of classification, application and sources of near-ultraviolet (UV) radiation the methods for fabricating UV photodetectors and characteristics of the photoconductive cells, p-n junction structure and Schottky barrier photodiodes are discussed. Characteristics of some light filters used in photodetectors and measuring devices are also reported. Now Si p-n structures are commonly used but Schottky diodes based on wide-gap (GaAsP, GaP, GaN, AlGaN, SiC) semiconductors are very attractive. They are insensitive to the infrared radiation and if necessary simple glass filters can be used for correcting the spectrum in such way that it covers just the near-UV region.

122 citations

Patent
31 Mar 2009
TL;DR: In this paper, two fluorine ion containing regions are formed directly underneath both Schottky contacts in the rectifier and in the HEMT, pinching off the (electron gas) channels in both structures at the hetero-interface between the epitaxial layers.
Abstract: Integrated high efficiency lateral field effect rectifier and HEMT devices of GaN or analogous semiconductor material, methods for manufacturing thereof, and systems which include such integrated devices. The lateral field effect rectifier has an anode containing a shorted ohmic contact and a Schottky contact, and a cathode containing an ohmic contact, while the HEMT preferably has a gate containing a Schottky contact. Two fluorine ion containing regions are formed directly underneath both Schottky contacts in the rectifier and in the HEMT, pinching off the (electron gas) channels in both structures at the hetero-interface between the epitaxial layers.

122 citations

Journal ArticleDOI
Donghun Kang1, Noejung Park2, Ju Hye Ko1, Eunju Bae1, Wanjun Park 
TL;DR: In this paper, a transport measurement showed that a long individual single-walled nanotube can be doped as p-type upon oxygen adsorption, and the effect of O2 adaption on a nanotubes-based field effect transistor was investigated.
Abstract: The effect of oxygen adsorption on a nanotube-based field effect transistor have been controversial as to whether it induces p-type doping of the nanotube body or the work function increase in the metal electrode. Here we report a transport measurement showing that a long individual single-walled nanotube can be doped as p-type upon oxygen adsorption. We discuss that, despite the fact that the charge transfer between the nanotube and O2 adsorbator has not been agreed to date, the effect of oxygen adsorption should still be interpreted as inducing p-type doping in the nanotube body. The n-type doping by NH3 adsorption is also measured for the purpose of comparison. Based on these observations, we suggest that, while the Schottky barrier management could be more effective for the transistor with a short nanotube, the doping effect could be more influential in devices with longer nanotubes.

121 citations

Journal ArticleDOI
TL;DR: In this paper, the Schottky barrier height of Pt-GaN diodes was determined to be 1.10 eV, which is close to 1.5 eV.
Abstract: Gallium nitride is a highly promising wide band gap semiconductor with applications in high power electronic and optoelectronic devices. Among the devices considered for high power generation is the ubiquitous field‐effect transistors which require Schottky barriers for modulating the channel mobile charge. It is in this context that we have undertaken an investigation of likely metal‐GaN contacts. Here we report on the electrical conduction and other properties of Pt–GaN Schottky diodes. These Schottky diodes were fabricated using n‐GaN grown by the molecular beam epitaxy method. Both capacitance–voltage and current–voltage measurements have been carried out as a function of temperature to gain insight into the processes involved in current conduction. Based on these measurements, physical mechanisms responsible for electrical conduction at low and high voltages and temperatures have been suggested. Schottky barrier height determined from the current–voltage and capacitance–voltage measurements is close to 1.10 eV.

121 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023565
2022988
2021672
2020758
2019824
2018847