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Schottky barrier

About: Schottky barrier is a research topic. Over the lifetime, 22570 publications have been published within this topic receiving 427746 citations. The topic is also known as: Schottky barrier junction.


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BookDOI
01 Jan 2008
TL;DR: In this article, a carbon nanotube field effect transistor was designed for field-enhanced spectroscopy using contact barrier engineering (CBE) and Schottky barrier formation at a carbon-to-metal junction.
Abstract: -Study of Nanowire growth mechanisms: VLS & Si-assisted. -One-dimensional SiC nanostructures: Synthesis and its Properties. -Self-organized Nanowire Formation of Si-based Materials. -Optical anisotropy of semiconductor nanowires. -FDTD spectroscopic study of metallic nanostructures: on the pertinent employment of tabulated permittivities. -Electromagnetic nanowire resonances for field-enhanced spectroscopy. -Designing the Carbon Nanotube Field Effect Transistor through Contact Barrier Engineering. -Low dimensional nano-materials for spintronics . -One dimensional phase-change nanomaterials for information storage application. -Ordering of self-assembled quantum wires on InP (001) surfaces. -Schottky barrier formation at a carbon nanotube-metal junction. -X-ray excited optical luminescence characterization of nanowires: sites, surfaces, and symmetries. -Single and multi wall carbon nanotubes: Differences and analogies in their electronic properties. -Controlled formation of nanowire array.

119 citations

Journal ArticleDOI
TL;DR: In this article, anomalous rectifying behavior has been observed in molybdenum/silicon Schottky barrier diodes produced by ion-beam sputter deposition of Mo on singlecrystal Si.
Abstract: Abnormal rectifying behavior has been observed in molybdenum/silicon Schottky barrier diodes produced by ion‐beam sputter deposition of Mo on single‐crystal Si. Rectifying, rather than ohmic contacts are obtained on p‐type Si, while ohmic behavior is seen on n‐type Si. These results are contrary to the usual results reported in the literature, and are shown to be caused by ion‐beam surface damage of Si. The damage does not simply cause a surface layer of high‐recombination velocity, but rather tends to bend the Si band edges downwards, irrespective of the Si conductivity type.

118 citations

Journal ArticleDOI
TL;DR: In this paper, the effects of an (NH4)2S surface treatment on the formation of Schottky barriers on n and p-type GaAs were investigated and it was shown that the surface state density of GaAs is increased by a reduced pinning of the Fermi level at the surface.
Abstract: Because of a large surface state density, which effectively pins the Fermi level at the surface, metals with vastly different work functions and chemistry produce very similar Schottky barriers when deposited on GaAs. We have investigated the effects of an (NH4)2S surface treatment on the formation of Schottky barriers on n‐ and p‐type GaAs. Samples which have undergone the (NH4)2S treatment show a reduced pinning of the Fermi level at the surface and hence Schottky barriers which are more sensitive to the metal work function.

118 citations

Journal ArticleDOI
TL;DR: In this paper, the change of band banding with the crystal polarity of GaN films was investigated using high-resolution photoemission spectroscopy, and the Ga-face sample exhibited higher Schottky barrier height and lower contact resistivity of a Ti/Al-based Ohmic contact.
Abstract: The change of band banding with the crystal polarity of GaN films was investigated using high-resolution photoemission spectroscopy. Compared with a N-face sample, the Ga-face sample exhibited higher Schottky barrier height and lower contact resistivity of a Ti/Al-based Ohmic contact. It was found that Ga-face GaN has a larger surface band bending than N-face GaN by 1.4 eV due to spontaneous polarization, resulting in higher Schottky barrier height. The lower Ohmic contact resistivity on Ga-face GaN originated from the formation of polarization-induced two-dimensional electron gas at the interface of AlN with GaN.

118 citations

Journal ArticleDOI
TL;DR: In this article, the Tung model was applied to metal/semiconductor Schottky diodes and the expected nm-scale barrier-height distribution (BHD) was calculated using ultrahigh vacuum (UHV) ballistic electron emission microscopy (BEEM).
Abstract: Tung has shown [Phys. Rev. B 45, 13 509 (1992)] that a range of ``nonideal'' behaviors observed in metal/semiconductor (MS) Schottky diodes could be quantitatively explained by assuming that specific microscopic distributions of nanometer-sized ``patches'' of reduced barrier height exist at the MS interface. Here we report a simultaneous microscopic and macroscopic test of this model as applied to $\mathrm{metal}/6H\ensuremath{-}\mathrm{SiC}$ Schottky diodes, by (1) measuring the nm-scale barrier-height distribution (BHD) of particular Schottky diodes using ultrahigh vacuum (UHV) ballistic electron emission microscopy (BEEM), (2) extending the Tung model to calculate the expected nm-scale BHD for particular parameter values, and (3) quantitatively relating the measured nm-scale BHD of a particular Schottky diode to its macroscopic $I\ensuremath{-}V$ characteristic. Our studies indicate that (1) for relatively ideal diodes, both the microscopic and macroscopic behaviors are explained well by the Tung model with a large coverage (g5%) of shallow patches, (2) the measured BHDs are nearly identical for relatively ideal and highly nonideal diodes, and (3) a simple Tung model can account for highly nonideal behavior only by assuming an unphysical patch distribution in which the excess current is dominated by a few patches in the extreme tail of the patch distribution. Our measurements instead suggest that all the diodes contain a broad ``intrinsic'' distribution of shallow patches, while the large excess current in highly nonideal diodes is due to a few large defects of extrinsic origin. This last conclusion is consistent with a recent study by Skromme and co-workers [J. Electron. Mater. 29, 376 (2000)].

118 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023565
2022988
2021672
2020758
2019824
2018847