Topic
Schottky barrier
About: Schottky barrier is a research topic. Over the lifetime, 22570 publications have been published within this topic receiving 427746 citations. The topic is also known as: Schottky barrier junction.
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TL;DR: In this article, a chloride molecular doping technique was proposed to reduce the contact resistance in the few-layer WS2 and MoS2, which greatly reduced the Schottky barrier width.
Abstract: Low-resistivity metal-semiconductor (M-S) contact is one of the urgent challenges in the research of 2D transition metal dichalcogenides (TMDs). Here, we report a chloride molecular doping technique which greatly reduces the contact resistance (Rc) in the few-layer WS2 and MoS2. After doping, the Rc of WS2 and MoS2 have been decreased to 0.7 kohm*um and 0.5 kohm*um, respectively. The significant reduction of the Rc is attributed to the achieved high electron doping density thus significant reduction of Schottky barrier width. As a proof-ofconcept, high-performance few-layer WS2 field-effect transistors (FETs) are demonstrated, exhibiting a high drain current of 380 uA/um, an on/off ratio of 4*106, and a peak field-effect mobility of 60 cm2/V*s. This doping technique provides a highly viable route to diminish the Rc in TMDs, paving the way for high-performance 2D nano-electronic devices.
112 citations
TL;DR: In this paper, the spectral photoresponse of Al/pentacene Schottky junction photodiodes and optical absorption spectra of pentacene films thermally evaporated on glass were measured.
Abstract: We have measured the spectral photoresponse of Al/pentacene Schottky junction photodiodes and optical absorption spectra of pentacene films thermally evaporated on glass. The photoelectric response exhibited the genuine highest occupied molecular orbital (HOMO)–lowest unoccupied molecular orbital (LUMO) transition at 1.97 eV and interband absorption peaks at 2.3 and 2.5 eV. These peaks are also identified in the optical absorption spectra, but they are dominated by additional strong exciton peaks at 1.82 and 2.1 eV. By comparing these complementary measurements, we determine the HOMO–LUMO gap energy of 1.97 eV and the fundamental exciton binding energy of 0.15 eV for thin solid pentacene.
112 citations
TL;DR: In this paper, the field drift of the acceptor-neutralizing defect has been detected in reverse-biased Schottky barrier and junction diodes made from plasma-hydrogenated, p-type, boron-doped silicon.
Abstract: Field drift of the hydrogen‐related, acceptor‐neutralizing defect has been detected in reverse‐biased Schottky barrier and junction diodes made from plasma‐hydrogenated, p‐type, boron‐doped silicon. Significant differences in diffusion depths and drift rates between hydrogenated and deuterated silicon indicate that the mobile neutralizing species is possibly uncomplexed monoatomic hydrogen with a donor level above the mid band gap. Hydrogen‐boron pairing explains qualitatively the boron acceptor concentration profiles in hydrogen‐neutralized, p‐type silicon.
112 citations
14 Jun 2005
TL;DR: In this article, a Schottky-source/drain MOSFET (SBT) with dopant-segregation (DS) source and drain was proposed.
Abstract: High-performance operation was achieved in a novel Schottky-source/drain MOSFET (SBT: Schottky barrier transistor), which has dopant-segregation (DS) Schottky source/drain. Sub-100 nm complementary DS-SBTs were fabricated using the CoSi/sub 2/ process, which was fully compatible with the current CMOS technology. Excellent CMOS performance was obtained without any channel-mobility degradation, and CMOS ring oscillator was successfully demonstrated. In addition, >20 % improvement in drive current over the conventional n-MOSFETs was confirmed in the n-type DS-SBTs around the gate length of 50 nm.
112 citations
TL;DR: In this article, the effect of bottom electrode material on the resistance switching characteristics was evaluated on the structure of Pt∕Cu2O/bottom electrode and it was confirmed that Ohmic or low Schottky contact is needed to induce the effective electric field for resistance switching across the Cu2O film.
Abstract: The effect of the bottom electrode material on the resistance switching characteristics was evaluated on the structure of Pt∕Cu2O/bottom electrode). It was confirmed that Ohmic or low Schottky contact is needed to induce the effective electric field for resistance switching across the Cu2O film. Pt, TiN, TaN, and strontium-ruthenium oxide belong to this group. For high Schottky contact, the resistance switching characteristics could not be observed due to a large voltage drop at the rectifying interface with insufficient electric field in the Cu2O film. Also, it was confirmed that interlayer formation from the reaction at the electrode-oxide interface increased the barrier height and brought about the switching failure in the case of Ru. The resistance switching properties depend on the barrier height and the reactivity between metal and Cu2O film.
112 citations