Topic
Schottky barrier
About: Schottky barrier is a research topic. Over the lifetime, 22570 publications have been published within this topic receiving 427746 citations. The topic is also known as: Schottky barrier junction.
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TL;DR: In this article, the electrical and optical properties of Au-n-type silicon Schottky-barrier solar cells (SBSC) have been measured and it has been shown that the value of Voc is increased by up to 38% and the maximum conversion efficiency by as much as 35% when compared with cells having no grown oxide layer.
Abstract: Measurements have been made of the electrical and optical properties of Au–n‐type silicon Schottky‐barrier solar cells (SBSC) in which the metal and semiconductor are separated by a thin interfacial oxide layer ∼10–23 A thick. Measurements of the V‐I characteristics showed that the value of Voc is increased by up to 38% and the maximum conversion efficiency by as much as 35% when compared with cells having no grown oxide layer.
110 citations
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TL;DR: By analyzing the response/recovery speed of the RGO-based photodetectors, the effects of oxygen-containing functional groups and crystalline defects on the photoelectric conversion are studied.
Abstract: Reduced graphene oxide (RGO) has been employed as an electrode for a series of vertically structured photodetectors. Compared with mechanically exfoliated or chemical vapor deposited graphene, RGO possesses more oxygen containing groups and defects, which are proved to be favorable to enhance the performance of photodetectors. As a matter of fact, RGO with different reduction levels can be readily obtained by varying the annealing temperature. The synthesis procedures for the RGO material are suitable for large scale production and its performance can be effectively improved by functionalization or element doping. For RGO-based devices, the Schottky junction properties and photoelectric conversion have been investigated, primarily by analyzing their current–voltage characteristics. Subsequently, the ON/OFF ratio, responsivity and detectivity of the photodetectors were closely examined, proving that the RGO material could be effectively utilized as the electrode material; also, their relationship with the RGO reduction levels has also been explored. By analyzing the response/recovery speed of the RGO-based photodetectors, we have studied the effects of oxygen-containing functional groups and crystalline defects on the photoelectric conversion.
110 citations
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IBM1
TL;DR: In this article, the microscopic chemistry of atoms at the reactive metal/Si (or silicide/Si) interface was investigated and it was shown that suicide compound formation plays an important role in determining the Schottky barrier height.
110 citations
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TL;DR: In this article, a combined model involving thermionic emission and tunneling through interface states is proposed to describe the electrical conduction through the platinum-nanowire contacts, fabricated by focused ion beam techniques.
Abstract: A simple and useful experimental alternative to field-effect transistors for measuring electrical properties free electron concentration nd, electrical mobility , and conductivity in individual nanowires has been developed. A combined model involving thermionic emission and tunneling through interface states is proposed to describe the electrical conduction through the platinum-nanowire contacts, fabricated by focused ion beam techniques. Current-voltage I-V plots of single nanowires measured in both two- and four-probe configurations revealed high contact resistances and rectifying characteristics. The observed electrical behavior was modeled using an equivalent circuit constituted by a resistance placed between two back-to-back Schottky barriers, arising from the metal-semiconductor-metal M-S-M junctions. Temperature-dependent I-V measurements revealed effective Schottky barrier heights up to BE=0.4 eV.
110 citations
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TL;DR: In this article, a 2.5-kV diamond diode is demonstrated by electrical measurements using a circular gold Schottky contact, with an area > 1 mm/sup 2/, on large area freestanding single-crystal diamond consisting of a thin high purity layer ( 1/spl times/0/sup 19/ [B]/cm/sup 3/) with an ohmic back contact.
Abstract: Demonstration of a 2.5-kV diamond diode is provided by electrical measurements using a circular gold Schottky contact, with an area >1 mm/sup 2/, on large area freestanding single-crystal diamond consisting of a thin high purity layer ( 1/spl times/0/sup 19/ [B]/cm/sup 3/) substrate with an ohmic back contact. The diode structures were fabricated using a microwave-assisted chemical vapor deposition process. The forward properties of the diode show a space charge limited current, with a forward-voltage drop of 2 V and a hole mobility of 4100/spl plusmn/400 cm/sup 2//Vs at room temperature. For temperatures between 300 K
110 citations