Schottky barrier

About: Schottky barrier is a research topic. Over the lifetime, 22570 publications have been published within this topic receiving 427746 citations. The topic is also known as: Schottky barrier junction.

Correlation between EF pinning and development of metallic character in Ag overlayers on GaAs(110).

Abstract: Ag is deposited on room-temperature and low-temperature GaAs(ll0). Correlation is found between the appearance of metallicity in the Ag layer, as inferred from the width of the Ag-4dband, and the pinning of the Fermi level at the GaAs surface. These results suggest the importance of metal-induced gap states at high coverage (> 2 A) in the formation of the Schottky barrier.

Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN∕GaN heterostructures

Abstract: Using the measured capacitance- voltage curves of Ni Schottky contacts with different areas on strained AlGaN/ GaN heterostructures and the current- voltage characteristics for the AlGaN/ GaN heterostructure field- effect transistors at low drain- source voltage, we found that the two- dimensional electron gas (2DEG) electron mobility increased as the Ni Schottky contact area increased. When the gate bias increased from negative to positive, the 2DEG electron mobility for the samples increased monotonically except for the sample with the largest Ni Schottky contact area. A new scattering mechanism is proposed, which is based on the polarization Coulomb field scattering related to the strain variation of the AlGaN barrier layer. (C) 2007 American Institute of Physics.

Slow-Wave Propagation Along Variable Schottky-Contact Microstrip Line

Abstract: Schottky-contact microstrip lines (SCML) are a special type of transmission line on the semiconducting substrate: the metallic-strip conductor is specially selected to form a rectifying metal-semiconductor transition while the ground plane exhibits an ohmic metallization. Thus the cross section of SCML is similar to that of a Schottky-barrier diode. The resulting voltage-dependent capacitance per unit length causes the nonlinear behavior of such lines. In this paper a detailed analysis of the, slow-wave propagation on SCML is presented, including the effect of metallic losses. Formulas for the propagation constant and characteristic impedance are derived and an equivalent circuit is presented. Conditions for slow-mode behavior are given, particularly taking into account the influence of imperfect conductors and defining the range of many interesting applications. Experimental results performed on Si-SCML are compared with theory.

Minority carrier effects upon the small signal and steady-state properties of Schottky diodes

Abstract: Schottky diode theory is re-evaluated by applying the combined thermionic emission-diffusion theory to both the majority and minority carrier flows across the metal-semiconductor contact. Under both steady-state d.c. and small signal a.c. conditions, numerical solutions to the semiconductor transport equations subject to boundary conditions determined from the combined theory are used to investigate the effects of minority carriers upon the properties of uniformly doped Schottky diodes. High injection effects and contact limitations are shown to influence the minority carrier injection ratio and the total stored minority carrier charge. It is further shown that the small signal impedance of a large class of Schottky diodes becomes inductive under moderate forward bias.