Schottky barrier

About: Schottky barrier is a research topic. Over the lifetime, 22570 publications have been published within this topic receiving 427746 citations. The topic is also known as: Schottky barrier junction.

Separation of bulk and interface contributions to electroforming and resistive switching behavior of epitaxial Fe-doped SrTiO3

Abstract: We succeeded in the separation of bulk and interface contributions to the electroforming and resistive switching behavior of Pt/STO(Fe)/Nb:STO devices by performing impedance spectroscopy. Two distinctive features observed in the impedance spectra could be assigned to the STO(Fe) bulk and to the depletion layer of the Pt/STO(Fe) Schottky contact. We attribute the resistance change during the dc forming process to a local bypassing of the depletion layer caused by oxygen effusion to the environment. By comparing the impedance spectra in the resistive “on” and “off” states, we propose that the resistance of the STO(Fe)/Nb:STO interface locally changes during the switching process.

Doping Profile Analysis in Si by Electrochemical Capacitance‐Voltage Measurements

Abstract: The electrochemical capacitance-voltage (ECV) technique was used to measure the carrier concentration profiles in Si Using the conventional parallel-equivalent circuit model of the Schottky junction to describe the electrolyte-silicon barrier we found excellent agreement between ECV and four-point probe analyses within ±10 to 20% for bulk Si uniformly doped p- and n-type from 10 12 to 10 18 cm -3 In this concentration range accuracy limits are determined mainly by the precise measurement of the area of the electrolyte-Si contact For the anodic etching of Si, a constant effective dissolution valence of z=37 was used throughout the measurements Investigations with isotype and anisotype doping transitions were performed employing ECV and other profiling techniques for comparison

Band alignment and carrier injection at the porous‐silicon–crystalline‐silicon interface

Abstract: The current‐voltage characteristics and the photoresponse of metal‐porous Si–p‐type Si heterostructures have been studied. It is shown that the common interpretation of the current‐voltage characteristics, which assumes that the current is limited by the Schottky barrier at the metal‐porous Si interface, is wrong. An alternative explanation based on the electric‐field dependence of the porous Si conductivity is suggested. It is shown that the rectifying behavior originates from a depletion inside the c‐Si substrate at its interface to the porous Si.

Exciton diffusion length in the organic semiconductor diindenoperylene

Abstract: The photovoltaic behavior of Schottky barrier devices consisting of a single diindenoperylene (DIP) layer sandwiched between an indium tin oxide and Ag electrode has been investigated. Correlating the spectral dependence of the photocurrent and the absorption coefficient, we estimated the exciton diffusion length in DIP to ∼100nm along the c′ direction. X-ray structural analysis yielded this length to be in agreement with the average crystallite size, thereby, revealing domain boundaries to be the limiting effect on the exciton transport. The corresponding exciton diffusion constant of 5×10−3cm2∕s resembles that of highly ordered single crystals of polyaromatic hydrocarbons.