Schottky barrier

About: Schottky barrier is a research topic. Over the lifetime, 22570 publications have been published within this topic receiving 427746 citations. The topic is also known as: Schottky barrier junction.

On the analysis of diffusion length measurements by SEM

Abstract: A simpler analysis is given of the diffusion problem related to the scanning electron microscope measurements of bulk diffusion lengths in semiconductors using scanning normal to a p - n junction or a Schottky barrier. The current profile due to a point source is obtained in form of the Fourier transform of an expression containing elementary functions only. It is shown that this form can be readily adapted to include the presence of a back ohmic contact and allows an easier discussion of the case of an extended generation.

Platinum Nanoparticles Supported on Anatase Titanium Dioxide as Highly Active Catalysts for Aerobic Oxidation under Visible Light Irradiation

Abstract: Visible light irradiation (λ >450 nm) of platinum (Pt) nanoparticles supported on anatase titanium dioxide (TiO2) promotes efficient aerobic oxidation at room temperature. This occurs via the electronic excitation of Pt particles by visible light followed by the transfer of their electrons to anatase conduction band. The positively charged Pt particles oxidize substrates, whereas the conduction band electrons are consumed by the reduction of molecular oxygen. The activity of this photocatalysis depends on the height of Schottky barrier and the number of perimeter Pt atoms created at the Pt/anatase heterojunction, which are affected by the amount of Pt loaded and the size of Pt particles. The catalyst loaded with 2 wt % Pt, containing 3–4 nm Pt particles, creates a relatively low Schottky barrier and a relatively large number of perimeter Pt atoms and, hence, facilitates smooth Pt→anatase electron transfer, resulting in very high photocatalytic activity. This catalyst is successfully activated by sunlight ...

X-ray photoemission determination of the Schottky barrier height of metal contacts to n-GaN and p-GaN

Abstract: Synchrotron radiation-based x-ray photoemission spectroscopy was used to study the surface Fermi level position within the band gap for thin metal overlayers of Au, Al, Ni, Ti, Pt, and Pd on n–GaN and p–GaN. Nonequilibrium effects were taken into account by measuring the Fermi edge of the metal overlayer. There are two different behaviors observed for the six metals studied. For Au, Ti, and Pt, the surface Fermi level lies about 0.5-eV higher in the gap for n-type than for p-type GaN. For Ni, Al, and Pd, the surface Fermi level position is independent of doping, but varies from one metal to the other. Results for Ni, Pd, and Al fit a modified Schottky–Mott theory, while Au, Ti, and Pt demonstrate a more complex behavior. Atomic force microscopy was used along with photoemission to investigate the growth mode of each metal on the GaN surface.

Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes

Abstract: We report (010)-oriented β-Ga2O3 bevel-field-plated mesa Schottky barrier diodes grown by low-pressure chemical vapor deposition (LPCVD) using a solid Ga precursor and O2 and SiCl4 sources. Schottky diodes with good ideality and low reverse leakage were realized on the epitaxial material. Edge termination using beveled field plates yielded a breakdown voltage of −190 V, and maximum vertical electric fields of 4.2 MV/cm in the center and 5.9 MV/cm at the edge were estimated, with extrinsic R ON of 3.9 mΩcm2 and extracted intrinsic R ON of 0.023 mΩcm2. The reported results demonstrate the high quality of homoepitaxial LPCVD-grown β-Ga2O3 thin films for vertical power electronics applications, and show that this growth method is promising for future β-Ga2O3 technology.

First-principles modeling of resistance switching in perovskite oxide material

Abstract: We report a first-principles study on SrRuO3∕SrTiO3 interface in the presence of the oxygen vacancy. While the oxygen vacancy on the side of SrTiO3 significantly lowers the Schottky barrier height, the oxygen vacancy close to the interface or inside the metallic electrode results in a Schottky barrier comparable to that of the clean interface. Based on these results, we propose a model for resistance-switching phenomena in perovskite oxide∕metal interfaces where electromigration of the oxygen vacancy plays a key role. Our model provides a consistent explanation of a recent experiment on resistance switching in SrRuO3∕Nb:SrTiO3 interface.