Schottky barrier

About: Schottky barrier is a research topic. Over the lifetime, 22570 publications have been published within this topic receiving 427746 citations. The topic is also known as: Schottky barrier junction.

Gate-Tunable Atomically Thin Lateral MoS2 Schottky Junction Patterned by Electron Beam.

Abstract: Among atomically thin two-dimensional (2D) materials, molybdenum disulfide (MoS2) is attracting considerable attention because of its direct bandgap in the 2H-semiconducting phase. On the other hand, a 1T-metallic phase has been revealed, bringing complementary application. Recently, thanks to top-down fabrication using electron beam (EB) irradiation techniques, in-plane 1T-metal/2H-semiconductor lateral (Schottky) MoS2 junctions were demonstrated, opening a path toward the co-integration of active and passive two-dimensional devices. Here, we report the first transport measurements evidencing the formation of a MoS2 Schottky barrier (SB) junction with barrier height of 0.13–0.18 eV created at the interface between EB-irradiated (1T)/nonirradiated (2H) regions. Our experimental findings, supported by state-of-the-art simulation, reveal unique device fingerprint of SB-based field-effect transistors made from atom-thin 1T layers.

A High Current Density Direct-Current Generator Based on a Moving van der Waals Schottky Diode.

Abstract: Traditionally, Schottky diodes are used statically in the electronic information industry while dynamic or moving Schottky diode-based applications are rarely explored. Herein, a novel Schottky diode named "moving Schottky diode generator" is designed, which can convert mechanical energy into electrical energy by means of lateral movement between the graphene/metal film and semiconductor. The mechanism is based on the built-in electric field separation of the diffusing carriers in moving Schottky diode. A current-density output up of 40.0 A m-2 is achieved through minimizing the contact distance between metal and semiconductor, which is 100-1000 times higher than former piezoelectric and triboelectric nanogenerators. The power density and power conversion efficiency of the heterostructure-based generator can reach 5.25 W m-2 and 20.8%, which can be further enhanced by Schottky junction interface design. Moreover, the graphene film/semiconductor moving Schottky diode-based generator behaves better flexibility and stability, which does not show obvious degradation after 10 000 times of running, indicating its great potential in the usage of portable energy source. This moving Schottky diode direct-current generator can light up a blue light-emitting diode and a flexible graphene wristband is demonstrated for wearable energy source.

Current‐voltage characteristic of Ti‐pSi metal‐oxide‐semiconductor diodes

Abstract: The electrical characteristics of Ti‐pSi metal‐oxide‐semiconductor diodes have been studied as a function of temperature and of applied voltage, using conventional Schottky barrier capacitance‐voltage (C‐V) and current‐voltage (I‐V) measurements. The results show a strong deviation from those expected from thermionic emission and from the minority carrier injection theory for the current mechanism. Unlike other authors who proposed a multistep recombination‐tunneling mechanism, we have stressed that a model based on the inhomogeneity of the barrier height over the diode area predicts a temperature and voltage behavior of the I‐V characteristic similar to the recombination‐tunneling mechanism. The concept of inhomogeneity proposed by former authors is supported by Auger depth concentration profiles which show an intermixed region of Ti and Si. It is observed that the equilibrium semiconductor band bending exhibits a stronger temperature dependence than expected from the variation of the semiconductor Fermi level.

Interlayer coupling and electric field tunable electronic properties and Schottky barrier in a graphene/bilayer-GaSe van der Waals heterostructure

Abstract: In this work, using density functional theory we investigated systematically the electronic properties and Schottky barrier modulation in a multilayer graphene/bilayer-GaSe heterostructure by varying the interlayer spacing and by applying an external electric field. At the equilibrium state, the graphene is bound to bilayer-GaSe by a weak van der Waals interaction with the interlayer distance d of 3.40 A with the binding energy per carbon atom of -37.71 meV. The projected band structure of the graphene/bilayer-GaSe heterostructure appears as a combination of each band structure of graphene and bilayer-GaSe. Moreover, a tiny band gap of about 10 meV is opened at the Dirac point in the graphene/bilayer-GaSe heterostructure due to the sublattice symmetry breaking. The band gap opening in graphene makes it suitable for potential applications in nanoelectronic and optoelectronic devices. The graphene/bilayer-GaSe heterostructure forms an n-type Schottky contact with the Schottky barrier height of 0.72 eV at the equilibrium interlayer spacing. Furthermore, a transformation from the n-type to p-type Schottky contact could be performed by decreasing the interlayer distance or by applying an electric field. This transformation is observed when the interlayer distance is smaller than 3.30 A, or when the applied positive external electric field is larger than 0.0125 V A-1. These results are very important for designing new electronic Schottky devices based on graphene and other 2D semiconductors such as a graphene/bilayer-GaSe heterostructure.